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2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Investigation of neutron influence on the total ionization dose effects of BJT 中子对BJT总电离剂量效应影响的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905100
X. Lv, K. Wu, J. Feng, D. Zou, J. J. Li
{"title":"Investigation of neutron influence on the total ionization dose effects of BJT","authors":"X. Lv, K. Wu, J. Feng, D. Zou, J. J. Li","doi":"10.1109/ICREED.2018.8905100","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905100","url":null,"abstract":"The differences between the response of transistors after neutron and gamma combined irradiation and gamma individual irradiation have been investigated. The results shown that the neutron pre-irradiation could increase the hole traps in SiO2. This mechanism may enhance the TID effect at high dose rate and suppress the TID effect at low dose rate.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129633403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Experimental Study on SEU Hardened Effect of Flash FPGA for Space Application 空间应用Flash FPGA的SEU硬化效果实验研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905081
Xiaoliang Li, Qingkui Yu, Yi Sun, Lei Luo, B. Mei
{"title":"The Experimental Study on SEU Hardened Effect of Flash FPGA for Space Application","authors":"Xiaoliang Li, Qingkui Yu, Yi Sun, Lei Luo, B. Mei","doi":"10.1109/ICREED.2018.8905081","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905081","url":null,"abstract":"SEU hardened design is done for BRAM and register of a Flash FPGA. Test is performed to verify the measures. It shows the cross section reduces 2 orders and 75%, respectively. SEU rate is calculated for different orbits. It reduces 4-5 orders for hardened BRAM and 2-3 orders for hardened register.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127865623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study on ASIC Single Event Soft Error Evaluation Methodology and Simulaion Analysis ASIC单事件软误差评估方法研究及仿真分析
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905097
Luo Lei, Liu Yinghui, Sun Yi, Li Xiaoliang, Yu Qingkui
{"title":"Study on ASIC Single Event Soft Error Evaluation Methodology and Simulaion Analysis","authors":"Luo Lei, Liu Yinghui, Sun Yi, Li Xiaoliang, Yu Qingkui","doi":"10.1109/ICREED.2018.8905097","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905097","url":null,"abstract":"A new domestic developed ASIC(ARINC65 bus transceiver) soft error effect was evaluated by both ion irradiation test and simulation analysis. The soft error sensitive module was identified by simulation analysis with circuit simulation software and output waveform observation software, which provided a strong reference for the device manufacturers to follow-up chip design improvement.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116119396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Total Ionizing Dose Radiation Hardened Trench VDMOS Device 一种总电离剂量辐射硬化沟槽VDMOS器件
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905101
Wu Hao, Yang Feng, Xiang Fan, Zheng Zhi, Zhang Mingmin, Fu Xiaojun
{"title":"A Total Ionizing Dose Radiation Hardened Trench VDMOS Device","authors":"Wu Hao, Yang Feng, Xiang Fan, Zheng Zhi, Zhang Mingmin, Fu Xiaojun","doi":"10.1109/ICREED.2018.8905101","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905101","url":null,"abstract":"A total dose radiation hardened trench VDMOS device is fabricated. This paper briefly introduces the designing methods of the epitaxial wafer, n-type body region doping concentration and drive-in condition, source region doping concentration, trench width and depth, and cell size. In this paper, n-type body region is doped and driven-in before the growth of the gate oxide. Simulation data, experimenting results before and after the total dose radiation are given, and comparisons are analyzed. For the specified trench VDMOS device introduced in this paper, the threshold voltage shift is -0.8V at a total dose of 100krad (Si). This result indicates that the designed trench VDMOS device shows the ability of total dose radiation tolerance.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133918938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PSI accelerator facilities and their use for components radiation tests PSI加速器设施及其用于组件辐射测试的用途
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905052
W. Hajdas, Hualin Xiao
{"title":"PSI accelerator facilities and their use for components radiation tests","authors":"W. Hajdas, Hualin Xiao","doi":"10.1109/ICREED.2018.8905052","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905052","url":null,"abstract":"Extensive complex of PSI accelerators allows for advanced experiments with protons, neutrons, X-rays and other particles. Being open for a multidisciplinary research community PSI adopted several beam lines as radiation tests facilities. They operate in frame of the ESA-ESTEC European Component Irradiation Facilities, are application-oriented and allow for flexible, user-specific test arrangements. The number of proton and electron tests performed in 2017 amounted to 91. Total number of days with particle beams was equal to 142. PSI beams were used by 30 users groups: industry, scientific institutes and space agencies conducting test exposures in ours facilities.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"19 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133134766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Detector Designed for Diagnosing Single Event Effect 一种用于诊断单事件效应的检测器
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905088
T. Xiao, J. Liu, B. Wang, X. Hao, S. Shao, Y. Zhang
{"title":"A Detector Designed for Diagnosing Single Event Effect","authors":"T. Xiao, J. Liu, B. Wang, X. Hao, S. Shao, Y. Zhang","doi":"10.1109/ICREED.2018.8905088","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905088","url":null,"abstract":"Single event effects (SEE) have become to be recognized as a very serious threat to electronic systems. In recent years, it is found that some abnormal errors defined as single event upset (SEU) in space-borne electronic systems were not caused by single particle event. It is important to study the mechanisms of SEU under space radiation environment. In this paper, we present a new detection scheme for diagnosing single event effect by analyzing the properties of particles and the measured data from a built-in module. By using this module, the single event upset will be monitored and investigated in space, and the incident particle who may caused the SEU will be measured.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114888086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Single Event Transient Harden Structure for Flip-Flop with RC Filter 带RC滤波器触发器的单事件瞬态硬化结构
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905068
Zhou Xinjie, Zhou Xiaobin, Liu Zhun, Tao Wei, Guo Gang, Shi Shuting, Hui Ning
{"title":"A Single Event Transient Harden Structure for Flip-Flop with RC Filter","authors":"Zhou Xinjie, Zhou Xiaobin, Liu Zhun, Tao Wei, Guo Gang, Shi Shuting, Hui Ning","doi":"10.1109/ICREED.2018.8905068","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905068","url":null,"abstract":"With the feature size of CMOS technology scaling down, the IC chips is increasing every year which makes the Single Event Effect (SEE) severer in space application than before. Especially for high-frequency digital circuits, the Single Event Upset (SEU) and Single Event Transient (SET) effect could cause soft errors of data. Although dual interlocked storage cell (DICE) flip-flop has a good anti-radiation characteristic, with the frequency of circuits become higher, more soft errors appear due to Single Event Transient Effect. This paper proposed a new radiation harden structure which based on resistance-capacitance filtering for flip-flop, and we compared it with two other radiation hardened structures. The test chip was based on 0.18μm CMOS technology, and the radiation experiment was carried out in Innovative Center of Radiation Hardening Applied Technology in China Institute of Atomic Energy. The result showed the liner energy transfer (LET) of flip-flop with the new radiation harden structure is larger than 37 MeV•cm2/mg which means it could satisfied the requirements of space application.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"35 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113976371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Investigation on Drain-Source On-State Resistance of SiC power MOSFETs from Single Event Effects Experiment 单事件效应实验对SiC功率mosfet漏源导通电阻的研究
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905074
Li Pengwei, Zhenquan Liang, Li Xingji, Yang Jianqun, Mei Bo, Lv He, Yu Qingkui, Tang Min, Xu Weixin
{"title":"The Investigation on Drain-Source On-State Resistance of SiC power MOSFETs from Single Event Effects Experiment","authors":"Li Pengwei, Zhenquan Liang, Li Xingji, Yang Jianqun, Mei Bo, Lv He, Yu Qingkui, Tang Min, Xu Weixin","doi":"10.1109/ICREED.2018.8905074","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905074","url":null,"abstract":"The forward resistance of the SiC power MOSFETs is an important parameter that affects the conductivity device. In order to evaluate the electrical properties of the sample after single-particle irradiation and the effect of changes on its function. In this paper, SiC power MOSFETs single-particle irradiation test after the test sample as the object, Using voltammetry to study VDS-IDS output characteristics and drain-source conduction characteristics. It gives a different VDS-IDS output characteristic parameters of the test samples and drain source on-state resistance with different drain-source bias voltages the law of change. It is pointed out that the internal unit damage after irradiation by single event irradiation of SiC power MOSFETs devices cause the change of the on resistance, it show that anti-single-event reinforcement design to provide reference by SiC power MOSFET devices.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122969904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Ionizing Dose Effects on Time-dependent Dielectric Breakdown in PMOS Capacitance Based on 65nm Process 基于65nm工艺的PMOS电容中介电击穿的总电离剂量效应
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905060
Ying Wei, Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Wu Lu, C. He, Q. Guo
{"title":"Total Ionizing Dose Effects on Time-dependent Dielectric Breakdown in PMOS Capacitance Based on 65nm Process","authors":"Ying Wei, Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Wu Lu, C. He, Q. Guo","doi":"10.1109/ICREED.2018.8905060","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905060","url":null,"abstract":"The gate dielectric breakdown characteristics of 65nm process PMOS capacitors impact of total ionizing dose (TID) radiation effect has been investigated in this paper. The capacitors breakdown times of PMOS capacitors with and without γ ray irradiation are measured using the constant voltage stress (CVS) procedures. The experimental results shown that the gate current varies with the gate voltage (Ig-Vg) has little change with and without the TID irradiation. However, the probability plotting (Weibull distributions) of breakdown times shift and the average breakdown charges decrease after radiation. This results indicate that the TID effect significant affect the capacitors reliability, which bring hidden trouble to space application.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127647463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Validation of Field-Plate Structures in Transistors on Rad-hardened 硬化晶体管场极板结构的验证
2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905050
Xue Wu, Jing Li, Zhikuan Wang, Guohua Shui, Jie Liu
{"title":"Validation of Field-Plate Structures in Transistors on Rad-hardened","authors":"Xue Wu, Jing Li, Zhikuan Wang, Guohua Shui, Jie Liu","doi":"10.1109/ICREED.2018.8905050","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905050","url":null,"abstract":"Poly and metal field-plate structures were designed in lateral-PNP bipolar junction transistors which fabricated on standard linear bipolar technology for validating their TID hardened effectiveness. 60Co γ irradiation experiment was executed on these samples and experimental results were compared. Results showed that metal field-plate was better than poly field-plate.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122393407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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