2018 International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献_第5页

Effect of Gamma Radiation on the electronic properties of PEDOT cathode tantalum capacitor 伽玛辐射对PEDOT阴极钽电容器电子性能的影响

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905083

Huanan Cui, Dayu Zhang, Yue Wang, Hongqi Zhang, M. Tang

引用次数: 0

Effects of 1MeV electron irradiation on the photoluminescence of GaInNAs/GaAs single quantum well structure 1MeV电子辐照对GaInNAs/GaAs单量子阱结构光致发光的影响

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905063

M. Sailai, Aierken Abuduwayiti, M. Heini, Zhao Xiaofan, Shen Xiaobao, Xu Yan, L. Haitao, Li Yudong, G. Qi

引用次数: 0

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits TID对CMOS电路瞬态电离辐射响应的影响

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905056

Li Ruibin, He Chao-hui, Chen Wei, L. Junlin, Wang Guizhen, Qi Chao, Yang Shanchao, W. Chenhui

{"title":"Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits","authors":"Li Ruibin, He Chao-hui, Chen Wei, L. Junlin, Wang Guizhen, Qi Chao, Yang Shanchao, W. Chenhui","doi":"10.1109/ICREED.2018.8905056","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905056","url":null,"abstract":"Total ionizing dose (TID) can cause the threshold voltage of complementary metal oxide semiconductor (CMOS) transistors to shift backward and the current gain of the parasitic triode to degrade; these two factors will compete while devices accumulating TID expose to transient ionizing irradiation, and the data status depends on the dominant one. Micrometer (CD4007) and sub-micrometer (IDT71256) CMOS devices were investigated on the synergistic effects of TID and transient ionizing irradiation. The results reveal that the current gain degradation induced by TID, for CD4007, plays a significant role; whereas the shrink of the static noise margin (SNM) induced by TID, for IDT71256, is the dominant factor and the influence of the parasitic transistor can be ignored. The reasons are sub-micrometer devices have the thinner gate oxide, resulting in the current gain degradation induced by TID not evident; and the collection volume of photocurrent is too small to generate enough primary photocurrent for driving the parasitic transistor on. In sum, the synergistic effects of TID and transient ionizing irradiation are evident in large-scale devices, while not evident in small-scale devices.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134174701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Displacement damage effects and anneal characteristic on InP/InGaAs DHBTs InP/InGaAs dhbt的位移损伤效应及退火特性

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905072

Xing-yao Zhang, Yudong Li, Q. Guo, Bin Liao, Shi Yang, Zhongyue Yang, Cheng-fa He

引用次数: 1

Total Ionizing Dose Effect Induced Current Degradation for 300V SOI NLDMOS 总电离剂量效应诱导300V SOI NLDMOS电流降解

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905064

Xin Zhou, Zhangyi’an Yuan, Lei Shu, Zhenlin Lu, M. Qiao, Zhaoji Li, Bo Zhang

引用次数: 0

Au Nanoparticles-Decorated Ultraviolet Photodetector on Transparent Mica Substrate 透明云母基板上金纳米粒子修饰紫外探测器

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905076

Hainan Zhang, T. Ren, R. Liang, Yunfei Zhao, Yu-xing Li, Zhenyi Ju, Houfang Liu, D. Xie, H. Tian, Yezhou Yang

引用次数: 0

Investigation of Single Event Effect Susceptibility of Inner Memory Blocks in 28 nm Xilinx SoC Using 239Pu 基于239Pu的28nm赛灵思SoC内存块单事件效应敏感性研究

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905095

L. Yonghong, Yang Weitao, He Chao-hui, Li Yang

引用次数: 0

A Novel SIT and VDMOS SEB Effects Contrastive Analysis by Numerical Simulation 一种新型SIT与VDMOS SEB效应的数值模拟对比分析

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905070

K. Tan, Dong Huang, Xia Zhang, Zhaohuan Tang, Xue Wu, Tian Xiao, Bin Wang, K. Zhu, Wensuo Chen, Jing Zhang

引用次数: 1

Kinetic Monte Carlo Simulation of Electron-Induced Point Defects Annealing in Gallium Nitride 氮化镓中电子诱导点缺陷退火的动力学蒙特卡罗模拟

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905084

Chengliang Huang, Chaohui He, Huan He, A. Hussain, Weitao Yang

引用次数: 0

Design of a Transient Ionizing Dose-rate Radiation Hardened LDO 瞬态电离剂量率辐射强化LDO的设计

2018 International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-05-01 DOI: 10.1109/ICREED.2018.8905065

Liu Zhi, Zhang Qiang, Jiang Hongyu, G. Mei

{"title":"Design of a Transient Ionizing Dose-rate Radiation Hardened LDO","authors":"Liu Zhi, Zhang Qiang, Jiang Hongyu, G. Mei","doi":"10.1109/ICREED.2018.8905065","DOIUrl":"https://doi.org/10.1109/ICREED.2018.8905065","url":null,"abstract":"The transient ionizing dose-rate radiation hardened design of a low-dropout regulator (LDO) is presented in this paper. It is mainly used to harden the LDO to improve the ionizing radiation dose rate of the circuit from the two aspects of circuit level hardened and device level hardened. A double-loop feedback method is proposed for circuit-level hardened. The loop 1 is the conventional feedback loop of LDO, and the loop 2 is introduced to enhance the LDO circuit immunity to the ionizing radiation dose rate effects. By directly detecting the changes in the output voltage of the LDO, the loop 2 feedbacks this change fastest to the output driver. This not only improves response speed of the LDO to the changes of the output voltage， which are caused by instantaneous radiation, but also improves the radiation ability of the LDO anti gamma instantaneous ionizing dose rate effects. The hardened level of the device is mainly based on the poly-silicon emitter NPN transistor, the gate control PNP transistor and other traditional effective layout hardened techniques, which are minimized to reduce photocurrents level. The hardened LDO has been implemented in a 0.35-μm BiCMOS process. The transient gamma dose rate irradiation experiment results show that the circuit survived 1×109Gy(Si)/s and that the recovery-time is less than 100us. The experimental results are of great significance to provide reference for improving LDO anti-transient ionization radiation level.","PeriodicalId":347783,"journal":{"name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114251092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0