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2009 IEEE International Reliability Physics Symposium最新文献

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Determination of the electric field distribution within multi-quantum-well light emitting diodes by the use of electron beam induced methods 电子束诱导法测定多量子阱发光二极管内电场分布
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173352
T. Geinzer, R. Heiderhoff, L. Balk
{"title":"Determination of the electric field distribution within multi-quantum-well light emitting diodes by the use of electron beam induced methods","authors":"T. Geinzer, R. Heiderhoff, L. Balk","doi":"10.1109/IRPS.2009.5173352","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173352","url":null,"abstract":"Dynamic electron beam induced methods are applied to determine the local electrical field distribution of devices with small depletion regions. The dissipation volume generated by the electron beam is much larger than the depletion region during these investigations. The frequency behavior of the electron beam induced signal must be analyzed in order to determine the field strength accurately. The characteristics of the in-phase and quadrature components are discussed for lock-in detection in the frequency domain. Additionally, change of the collection efficiency due to the depletion region widening effect at different biasing conditions has to be taken into account. The advantage and possibility of this technique are demonstrated exemplarily for a commercial multi-quantum-well light emitting diode.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125465676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction CoFeB/MgO/CoFeB磁性隧道结介质击穿机理研究
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173239
C. Yoshida, M. Kurasawa, Young Min Lee, K. Tsunoda, M. Aoki, Y. Sugiyama
{"title":"A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction","authors":"C. Yoshida, M. Kurasawa, Young Min Lee, K. Tsunoda, M. Aoki, Y. Sugiyama","doi":"10.1109/IRPS.2009.5173239","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173239","url":null,"abstract":"We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force microscopy (C-AFM) observation. We found that two different local conduction modes, the percolation path and Fowler-Nordheim (F-N) tunneling, contribute to dielectric breakdown. Furthermore, the operating voltage of magnetic tunnel junctions (MTJs) for maintaining reliability over ten years against dielectric breakdown was discussed.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125802944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes 利用超快温度变化明确鉴定NBTI恢复机制
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173216
T. Aichinger, M. Nelhiebel, T. Grasser
{"title":"Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes","authors":"T. Aichinger, M. Nelhiebel, T. Grasser","doi":"10.1109/IRPS.2009.5173216","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173216","url":null,"abstract":"We study temperature and bias dependence of VTH and interface states recovery after NBTI (Negative Bias Temperature Instability) stress. By making use of in situ heated test structures, we are able to change the temperature quickly and reliably at any stage of the experiment while keeping the device bias conditions untouched. This tool enables us on the one hand (i) to bring identically processed devices to the same degradation level, by stressing them under the same bias and temperature conditions, and on the other hand (ii) to vary the temperature in a defined way during recovery. Additionally we also study the influence of gate bias switches at constant temperature. Out of those experiments we have discovered that recovery acceleration can be observed either by increasing the temperature or by switching the gate bias for a short period of time towards accumulation. Since Charge Pumping (CP) measurements before stress and after recovery indicate that interface states cannot be made responsible for this acceleration, we suggest the neutralization of NBTI induced positive oxide traps to be the dominant recovery mechanism. However, if this is the case, we have to consider inelastic phonon-assisted tunneling in order to explain the temperature acceleration at fixed gate bias.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132315476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method RF-MEMS电容开关中的ESD应力:介电材料沉积方法的影响
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173312
J. Ruan, G. Papaioannou, N. Nolhier, M. Bafleur, F. Coccetti, R. Plana
{"title":"ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method","authors":"J. Ruan, G. Papaioannou, N. Nolhier, M. Bafleur, F. Coccetti, R. Plana","doi":"10.1109/IRPS.2009.5173312","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173312","url":null,"abstract":"The present work investigates the influence of dielectric film deposition method on the charging behavior of RF-MEMS capacitive switches, stressed by electrostatic discharges. A Transmission Line Pulsing generator is used to produce the short transient event. The results show two simplified charging mechanisms influenced by discharges. The comparison between two silicon nitride confirms the effect of the dielectric material deposition method on the reliability of the switches.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134365891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions 通过测量单个捕获电荷发射来研究nbt后HfSiON栅极介质pmosfet的应力电流不稳定模式
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173223
H.C. Ma, J. Chiu, C. Tang, Tahui Wang, C.S. Chang
{"title":"Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions","authors":"H.C. Ma, J. Chiu, C. Tang, Tahui Wang, C.S. Chang","doi":"10.1109/IRPS.2009.5173223","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173223","url":null,"abstract":"Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129370839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Qualification & reliability monitoring for small quantity ASIC populations 小批量专用集成电路的质量和可靠性监控
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173257
D. Alexander, S. Philpy, D. Pierce
{"title":"Qualification & reliability monitoring for small quantity ASIC populations","authors":"D. Alexander, S. Philpy, D. Pierce","doi":"10.1109/IRPS.2009.5173257","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173257","url":null,"abstract":"The authors present a discussion of the issues and an approach for qualification and reliability monitoring for small quantity ASICs used in long lifetime applications. Special attention is given to issues associated with sub-100 nm technologies and the unique challenges posed by new materials and processes.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130900031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new fast switching NBTI characterization method that determines subthreshold slope degradation during stress 一种新的快速切换NBTI表征方法，用于确定应力作用下的亚阈值边坡退化
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173400
D. Brisbin, P. Chaparala
{"title":"A new fast switching NBTI characterization method that determines subthreshold slope degradation during stress","authors":"D. Brisbin, P. Chaparala","doi":"10.1109/IRPS.2009.5173400","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173400","url":null,"abstract":"For PMOSFET devices NBTI is a serious reliability concern. Because of recovery effects careful stress and measurement methods must be used to determine threshold voltage (VT) degradation. These methods typically assume that mobility and subthreshold slope (SS) degradation are minimal. Recent paper have pointed out that this assumption may not be valid. This paper discusses a new fast switching NBTI measurement technique that alternates between two VGS measurement conditions to determine the SS as a function of stress time. In this new method the SS is determined during stress to correctly compensate the VT degradation for SS degradation. In addition, this papter presents SS and VT NBTI degradation data from a 2 nm low and high nitrogen and a 6 nm DGO PMOS device to demonstrate the value of this new method.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124150160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Processing impact on the reliability of single metal dual dielectric (SMDD) gate stacks 工艺对单金属双介质栅极堆叠可靠性的影响
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173281
T. Kauerauf, M. Aoulaiche, M. Cho, L. Ragnarsson, T. Schram, R. Degraeve, T. Hoffmann, G. Groeseneken, S. Biesemans
{"title":"Processing impact on the reliability of single metal dual dielectric (SMDD) gate stacks","authors":"T. Kauerauf, M. Aoulaiche, M. Cho, L. Ragnarsson, T. Schram, R. Degraeve, T. Hoffmann, G. Groeseneken, S. Biesemans","doi":"10.1109/IRPS.2009.5173281","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173281","url":null,"abstract":"The impact on the reliability of capping layers for low Vt nMOS and pMOS high-k transistors with metal gate is investigated and devices without the resist and strip process are compared to different resist removal recipes. It is found that the interface is not affected by the cap layer, but during the resist removal a thin defect layer is created. While with the cap above the host dielectric the impact of this defect layer is minor, with the cap located below the host the defects are more efficient, increasing the leakage current and reducing the TDDB lifetime.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117287898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electron beam induced temperature oscillation for qualitative thermal conductivity analysis by an SThM/ESEM-hybrid-system 电子束诱导温度振荡在SThM/ esem -混合系统定性热导率分析中的应用
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173273
A.-K. Tiedemann, R. Heiderhoff, L. Balk, J. Phang
{"title":"Electron beam induced temperature oscillation for qualitative thermal conductivity analysis by an SThM/ESEM-hybrid-system","authors":"A.-K. Tiedemann, R. Heiderhoff, L. Balk, J. Phang","doi":"10.1109/IRPS.2009.5173273","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173273","url":null,"abstract":"A hybrid-system consisting of a Scanning Thermal Microscope and an Environmental Scanning Electron Microscope is used to analyze directional thermal conductivity mechanisms. An electron beam stimulates locally variable hot spots, whereas a thermal probe is used as a locally resolving detector. The detected temperature oscillation strongly depends both on the local thermal conductivity and on the directivity of the heat transport within the investigated sample. This may allow analysis of linear structures like interfaces within materials.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117219845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures 高温下高k介电体新降解机制的证据
2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI: 10.1109/IRPS.2009.5173302
S. Sahhaf, R. Degraeve, R. O'Connor, B. Kaczer, M. Zahid, P. Roussel, L. Pantisano, G. Groeseneken
{"title":"Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures","authors":"S. Sahhaf, R. Degraeve, R. O'Connor, B. Kaczer, M. Zahid, P. Roussel, L. Pantisano, G. Groeseneken","doi":"10.1109/IRPS.2009.5173302","DOIUrl":"https://doi.org/10.1109/IRPS.2009.5173302","url":null,"abstract":"Elevated temperatures can significantly affect the driving forces of high-k degradation and breakdown. Okada et al. have proposed the Generated Subordinate Carrier Injection (GSCI) model. This model claims the universality of Stress- Induced Leakage Current (SILC) vs. hole fluence, independent of the temperature in n-channel MOSFET's with Hf and Al-based gate dielectrics. In this paper, we demonstrate that 125°C is a crucial temperature for the studied stack as an additional degradation mechanism is triggered above this temperature. Applying two material analysis techniques, SILC spectroscopy and Trap Spectroscopy by Charge Injection (TSCIS), we study the T-dependent energy spectrum of the generated defects and prove that the generation rate and the kind of participating traps in the breakdown (BD) path change at elevated temperatures.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128543911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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