ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method

Abstract

The present work investigates the influence of dielectric film deposition method on the charging behavior of RF-MEMS capacitive switches, stressed by electrostatic discharges. A Transmission Line Pulsing generator is used to produce the short transient event. The results show two simplified charging mechanisms influenced by discharges. The comparison between two silicon nitride confirms the effect of the dielectric material deposition method on the reliability of the switches.