CoFeB/MgO/CoFeB磁性隧道结介质击穿机理研究

2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173239

C. Yoshida, M. Kurasawa, Young Min Lee, K. Tsunoda, M. Aoki, Y. Sugiyama

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引用次数: 41

摘要

我们通过测量时间相关介质击穿(TDDB)和进行原子力显微镜(C-AFM)观察来研究1 nm厚MgO势垒的击穿特性。我们发现两种不同的局部传导模式，即渗透路径和Fowler-Nordheim (F-N)隧道，有助于介质击穿。此外，还讨论了磁隧道结(MTJs)在介质击穿下保持十年可靠性的工作电压。

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A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction

We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force microscopy (C-AFM) observation. We found that two different local conduction modes, the percolation path and Fowler-Nordheim (F-N) tunneling, contribute to dielectric breakdown. Furthermore, the operating voltage of magnetic tunnel junctions (MTJs) for maintaining reliability over ten years against dielectric breakdown was discussed.

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2009 IEEE International Reliability Physics Symposium

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