Materials for Quantum Technology最新文献

Nitrogen-vacancy centers in diamond: discovery of additional electronic states 金刚石中的氮空位中心：额外电子态的发现

Materials for Quantum Technology Pub Date : 2024-07-10 DOI: 10.1088/2633-4356/ad61b3

Minh-Tuan Luu, Ali Tayefeh Younesi, Ronald Ulbricht

引用次数: 0

Fabrication of tips for scanning probe magnetometry by diamond growth 用金刚石生长法制造扫描探针磁强计的针尖

Materials for Quantum Technology Pub Date : 2024-06-14 DOI: 10.1088/2633-4356/ad589d

Arne Götze, Xavier Vidal, Nicola Lang, Christian Giese, Patricia Quellmalz, Jan Jeske, Peter Knittel

{"title":"Fabrication of tips for scanning probe magnetometry by diamond growth","authors":"Arne Götze, Xavier Vidal, Nicola Lang, Christian Giese, Patricia Quellmalz, Jan Jeske, Peter Knittel","doi":"10.1088/2633-4356/ad589d","DOIUrl":"https://doi.org/10.1088/2633-4356/ad589d","url":null,"abstract":"\u0000 The use of quantum sensors is promising detailed insights into physical phenomena such as magnetism or superconductivity. One example of such quantum sensors is a microscopic diamond tip containing nitrogen vacancy (NV) centers, which is capable of producing correlated measurements of vectorial magnetic fields and the sample topography on the nanoscale. In this study, we present a chemical vapor deposition (CVD) process to produce diamond tips with NV centers by overgrowing microstructured diamond substrates. The resulting diamond tips exhibit a radius of curvature of approximately 10 nm, suitable for use as a probe in an atomic force microscope (AFM). The magnetic sensitivity of the CVD-grown diamond tips is characterized with pulsed measurements of the optically detected magnetic resonance (ODMR), which yield a minimum magnetic sensitivity of 60 µT/√Hz. The growth of the diamond microstructures is observed to differ from the commonly used geometric model predicting CVD growth of bulk diamond crystals. We identify an empirical model for the growth behavior of the microstructures by taking into account processes described in the step flow growth model for crystals. Additionally, we demonstrate the applicability of the developed CVD growth process to membrane substrates required for the preparation of magnetometry-capable diamond tips.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"67 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141337935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots 集成砷化镓量子点的砷化镓绝缘体脊波导纳米束腔

Materials for Quantum Technology Pub Date : 2024-06-13 DOI: 10.1088/2633-4356/ad5823

Yueguang Zhou, Yuhui Yang, Yujing Wang, A. Koulas‐Simos, C. Palekar, I. Limame, Shulun Li, Hanqing Liu, H. Ni, Zhichuan Niu, Kresten Yvind, N. Gregersen, M. Pu, S. Reitzenstein

引用次数: 0

Quantum materials engineering by structured cavity vacuum fluctuations 利用结构化空腔真空波动的量子材料工程学

Materials for Quantum Technology Pub Date : 2024-05-21 DOI: 10.1088/2633-4356/ad4e8b

Hannes Huebener, Emil Viñas~Boström, Martin Claassen, S. Latini, Angel Rubio

引用次数: 0

Structural formation yield of GeV centers from implanted Ge in diamond 金刚石中植入 GeV 中心的结构形成率

Materials for Quantum Technology Pub Date : 2024-05-14 DOI: 10.1088/2633-4356/ad4b8d

Ulrich Wahl, J G Correia, Ângelo Rafael Granadeiro Costa, Afonso Lamelas, Vitor S Amaral, Karl Johnston, G. Magchiels, S. M. Tunhuma, A. Vantomme, L.M.C. Pereira

{"title":"Structural formation yield of GeV centers from implanted Ge in diamond","authors":"Ulrich Wahl, J G Correia, Ângelo Rafael Granadeiro Costa, Afonso Lamelas, Vitor S Amaral, Karl Johnston, G. Magchiels, S. M. Tunhuma, A. Vantomme, L.M.C. Pereira","doi":"10.1088/2633-4356/ad4b8d","DOIUrl":"https://doi.org/10.1088/2633-4356/ad4b8d","url":null,"abstract":"\u0000 In order to study the structural formation yield of germanium-vacancy (GeV) centers from implanted Ge in diamond, we have investigated its lattice location by using the β− emission channeling technique from the radioactive isotope 75Ge (t\u0000 1/2=83 min) produced at the ISOLDE/CERN facility. 75Ge was introduced via recoil implantation following 30 keV ion implantation of the precursor isotope 75Ga (126 s) with fluences around 2×1012 - 5×1013 cm−2. While for room temperature implantation fractions around 20% were observed in split-vacancy configuration and 45% substitutional Ge, following implantation or annealing up to 900°C, the split-vacancy fraction dropped to 6-9% and the substitutional fraction reached 85-96%. GeV complexes thus show a lower structural formation yield than other impurities, with substitutional Ge being the dominant configuration. Moreover, annealing or high-temperature implantation seem to favour the formation of substitutional Ge over GeV. Our results strongly suggest that GeV complexes are thermally unstable, and transformed to substitutional Ge by capture of mobile carbon interstitials, which is likely to contribute to the difficulties in achieving high formation yields of these optically active centers.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"30 50","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140980450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification 硅晶片上的低损耗α-钽共面波导谐振器：制造、表征和表面改性

Materials for Quantum Technology Pub Date : 2024-05-14 DOI: 10.1088/2633-4356/ad4b8c

D. Lozano, M. Mongillo, Xiaoyu Piao, S. Couet, Danny Wan, Y. Canvel, A. M. Vadiraj, T. Ivanov, J. Verjauw, R. Acharya, J. Van Damme, Mohiyaddin A. Fahd, J. Jussot, P. P. Gowda, Antoine Pacco, B. Raes, J. van de Vondel, Iuliana Radu, Bogdan Govoreanu, J. Swerts, Anton Potocnik, Kristiaan DeGreve

{"title":"Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification","authors":"D. Lozano, M. Mongillo, Xiaoyu Piao, S. Couet, Danny Wan, Y. Canvel, A. M. Vadiraj, T. Ivanov, J. Verjauw, R. Acharya, J. Van Damme, Mohiyaddin A. Fahd, J. Jussot, P. P. Gowda, Antoine Pacco, B. Raes, J. van de Vondel, Iuliana Radu, Bogdan Govoreanu, J. Swerts, Anton Potocnik, Kristiaan DeGreve","doi":"10.1088/2633-4356/ad4b8c","DOIUrl":"https://doi.org/10.1088/2633-4356/ad4b8c","url":null,"abstract":"\u0000 The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric loss at different interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. Here, we demonstrate the fabrication of high-quality factor α-tantalum coplanar-waveguide resonators directly on pristine 300 mm silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. Additionally, we apply a surface treatment based on hydrofluoric acid that allows us to modify different resonators surfaces, leading to a reduction in two-level system (TLS) loss in the devices by a factor of three. This loss reduction can be entirely attributed to the removal of surface oxides. Our study indicates that large scale manufacturing of low-loss superconducting circuits should indeed be feasible and suggests a viable avenue to materials-driven advancements in superconducting circuit performance.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"12 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140981736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent progress in undoped group-IV heterostructures for quantum technologies 用于量子技术的未掺杂 IV 族异质结构的最新进展

Materials for Quantum Technology Pub Date : 2024-02-14 DOI: 10.1088/2633-4356/ad2980

C. Tai, Jiun-Yun Li

引用次数: 0

Recent progress in undoped group-IV heterostructures for quantum technologies 用于量子技术的未掺杂 IV 族异质结构的最新进展

Materials for Quantum Technology Pub Date : 2024-02-14 DOI: 10.1088/2633-4356/ad2980

C. Tai, Jiun-Yun Li

引用次数: 0

Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics 用于硅量子光子学的电信 C 波段 In(Ga)As 量子点的生长

Materials for Quantum Technology Pub Date : 2024-02-02 DOI: 10.1088/2633-4356/ad2522

Ponraj Vijayan, R. Joos, Marco Werner, Jakob Hirlinger-Alexander, Matthias Seibold, Sergej Vollmer, R. Sittig, S. Bauer, Fiona Braun, S. Portalupi, M. Jetter, P. Michler

{"title":"Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics","authors":"Ponraj Vijayan, R. Joos, Marco Werner, Jakob Hirlinger-Alexander, Matthias Seibold, Sergej Vollmer, R. Sittig, S. Bauer, Fiona Braun, S. Portalupi, M. Jetter, P. Michler","doi":"10.1088/2633-4356/ad2522","DOIUrl":"https://doi.org/10.1088/2633-4356/ad2522","url":null,"abstract":"\u0000 Photonic integrated circuits based on the silicon-on-insulator platform currently allow high-density integration of optical and electro-optical components on the same chip. This high complexity is also transferred to quantum photonic integrated circuits, where non-linear processes are used for the generation of quantum light on the silicon chip. However, these intrinsically probabilistic light emission processes pose challenges to the ultimately achievable scalability. Here, an interesting solution would be employing on-demand sources of quantum light based on III-V platforms, which are nonetheless very complex to grow directly on silicon. In this paper, we show the integration of InAs quantum dots on silicon via the growth on a wafer bonded GaAs/Si template. To ensure emission in the telecom C-band (∼1550 nm), a metamorphic buffer layer approach is utilized. We show that the deposited single quantum dots show similar performance to their counterparts directly grown on the well-established GaAs platform. Our results demonstrate that on-demand telecom emitters can be directly and effectively integrated on silicon, without compromises on the performances of either the platforms","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"166 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139809592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inverse design and characterization of compact, broadband, and low-loss chip-scale photonic power splitters 紧凑型、宽带和低损耗芯片级光子功率分配器的逆向设计和特性分析

Materials for Quantum Technology Pub Date : 2024-02-02 DOI: 10.1088/2633-4356/ad2521

S. Hansen,, Guillermo Arregui Bravo, A. Babar, R. Christiansen, Søren Stobbe

{"title":"Inverse design and characterization of compact, broadband, and low-loss chip-scale photonic power splitters","authors":"S. Hansen,, Guillermo Arregui Bravo, A. Babar, R. Christiansen, Søren Stobbe","doi":"10.1088/2633-4356/ad2521","DOIUrl":"https://doi.org/10.1088/2633-4356/ad2521","url":null,"abstract":"\u0000 The scalability of integrated photonics hinges on low-loss chip-scale components, which are important for classical applications and crucial in the quantum domain. An important component is the power splitter, which is an essential building block for interferometric devices. Here, we use inverse design by topology optimization to devise a generic design framework for developing power splitters in any material platform, although we focus the present work on silicon photonics. We report on the design, fabrication, and characterization of silicon power splitters and explore varying domain sizes and wavelength spans. This results in a set of power splitters tailored for ridge, suspended, and embedded silicon waveguides with an emphasis on compact size and wide bandwidths. The resulting designs have a footprint of 2 μm x 3 μm and exhibit a remarkable 0.5-dB bandwidths exceeding 300 nm for the ridge and suspended power splitters and 600 nm for the embedded power splitter. We fabricate the power splitters in suspended silicon circuits and characterize the resulting devices using a cutback method. The experiments confirm the low excess loss, and we measure a 0.5-dB bandwidth of at least 245 nm -- limited by the wavelength range of our lasers.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"69 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139810814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0