Materials for Quantum Technology最新文献_第2页

Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics 用于硅量子光子学的电信 C 波段 In(Ga)As 量子点的生长

Materials for Quantum Technology Pub Date : 2024-02-02 DOI: 10.1088/2633-4356/ad2522

Ponraj Vijayan, R. Joos, Marco Werner, Jakob Hirlinger-Alexander, Matthias Seibold, Sergej Vollmer, R. Sittig, S. Bauer, Fiona Braun, S. Portalupi, M. Jetter, P. Michler

{"title":"Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics","authors":"Ponraj Vijayan, R. Joos, Marco Werner, Jakob Hirlinger-Alexander, Matthias Seibold, Sergej Vollmer, R. Sittig, S. Bauer, Fiona Braun, S. Portalupi, M. Jetter, P. Michler","doi":"10.1088/2633-4356/ad2522","DOIUrl":"https://doi.org/10.1088/2633-4356/ad2522","url":null,"abstract":"\u0000 Photonic integrated circuits based on the silicon-on-insulator platform currently allow high-density integration of optical and electro-optical components on the same chip. This high complexity is also transferred to quantum photonic integrated circuits, where non-linear processes are used for the generation of quantum light on the silicon chip. However, these intrinsically probabilistic light emission processes pose challenges to the ultimately achievable scalability. Here, an interesting solution would be employing on-demand sources of quantum light based on III-V platforms, which are nonetheless very complex to grow directly on silicon. In this paper, we show the integration of InAs quantum dots on silicon via the growth on a wafer bonded GaAs/Si template. To ensure emission in the telecom C-band (∼1550 nm), a metamorphic buffer layer approach is utilized. We show that the deposited single quantum dots show similar performance to their counterparts directly grown on the well-established GaAs platform. Our results demonstrate that on-demand telecom emitters can be directly and effectively integrated on silicon, without compromises on the performances of either the platforms","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"9 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139869249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inverse design and characterization of compact, broadband, and low-loss chip-scale photonic power splitters 紧凑型、宽带和低损耗芯片级光子功率分配器的逆向设计和特性分析

Materials for Quantum Technology Pub Date : 2024-02-02 DOI: 10.1088/2633-4356/ad2521

S. Hansen,, Guillermo Arregui Bravo, A. Babar, R. Christiansen, Søren Stobbe

{"title":"Inverse design and characterization of compact, broadband, and low-loss chip-scale photonic power splitters","authors":"S. Hansen,, Guillermo Arregui Bravo, A. Babar, R. Christiansen, Søren Stobbe","doi":"10.1088/2633-4356/ad2521","DOIUrl":"https://doi.org/10.1088/2633-4356/ad2521","url":null,"abstract":"\u0000 The scalability of integrated photonics hinges on low-loss chip-scale components, which are important for classical applications and crucial in the quantum domain. An important component is the power splitter, which is an essential building block for interferometric devices. Here, we use inverse design by topology optimization to devise a generic design framework for developing power splitters in any material platform, although we focus the present work on silicon photonics. We report on the design, fabrication, and characterization of silicon power splitters and explore varying domain sizes and wavelength spans. This results in a set of power splitters tailored for ridge, suspended, and embedded silicon waveguides with an emphasis on compact size and wide bandwidths. The resulting designs have a footprint of 2 μm x 3 μm and exhibit a remarkable 0.5-dB bandwidths exceeding 300 nm for the ridge and suspended power splitters and 600 nm for the embedded power splitter. We fabricate the power splitters in suspended silicon circuits and characterize the resulting devices using a cutback method. The experiments confirm the low excess loss, and we measure a 0.5-dB bandwidth of at least 245 nm -- limited by the wavelength range of our lasers.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"62 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139870579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window 揭示在第三电信窗口发射的 GaSb/AlGaSb 量子点的电子结构

Materials for Quantum Technology Pub Date : 2024-01-19 DOI: 10.1088/2633-4356/ad207e

L. Leguay, A. Chellu, J. Hilska, Esperanza Luna, A. Schliwa, Mircea Guina, T. Hakkarainen

{"title":"Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window","authors":"L. Leguay, A. Chellu, J. Hilska, Esperanza Luna, A. Schliwa, Mircea Guina, T. Hakkarainen","doi":"10.1088/2633-4356/ad207e","DOIUrl":"https://doi.org/10.1088/2633-4356/ad207e","url":null,"abstract":"\u0000 Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information processing and quantum communication. QDs emitting in the telecom wavelengths are especially important for ensuring compatibility with optical fiber systems required to implement quantum communication networks. To this end, GaSb QDs fabricated by filling local-droplet etched nanoholes are emerging as a viable approach, yet the electronic properties of such nanostructures have not been studied in detail. In this article, an insight into the electronic structure and carrier dynamics in GaSb/AlGaSb QDs is provided through a systematic experimental analysis of their temperature-dependent photoluminescence behavior. A steady-state rate equation model is used to reveal the relevant energy barriers for thermally activated carrier capture and escape processes. Furthermore, results of detailed theoretical simulations of quantum-confined energy states using the multi-band k·p model and the effective mass method are presented. The purpose of the simulations is to reveal the direct and indirect energy states, carrier wavefunctions, and allowed optical transitions for GaSb QDs with different physical dimensions.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"12 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139525437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Singly doped colloidal quantum dots as optically addressed nanopositionable qubits 作为光寻址纳米可定位量子位的单掺胶体量子点

Materials for Quantum Technology Pub Date : 2023-12-08 DOI: 10.1088/2633-4356/ad13a0

Rachel May Barrett, D. Binks

{"title":"Singly doped colloidal quantum dots as optically addressed nanopositionable qubits","authors":"Rachel May Barrett, D. Binks","doi":"10.1088/2633-4356/ad13a0","DOIUrl":"https://doi.org/10.1088/2633-4356/ad13a0","url":null,"abstract":"\u0000 Colloidal quantum dots are isolated semiconductor nanocrystals with a size-tunable bandgap that can be prepared and processed by well-established solvent-based chemistry, and are currently used for a number of optoelectronic applications. When doped with a single atom, they also have great potential as a platform for optically addressable spin qubits. This perspective first describes the process by which doped colloidal quantum dots can be made and the electronic structure produced in them by doping with a single atom. The properties that make them particularly well-suited as a spin-photon interface are identified: a local enviroment for the dopant that is free of unwanted spins; an optical cross-section for the dopant that can be enhanced by orders of magnitude via an exchange interaction with the band edge exciton of the dot; and, as an isolated nanocrystal, the scope for nano-positioning and hence precise incorporation into device structures. Lastly, two areas for development are discussed which would enhance the impact of singly doped quantum dots on quantum technology. The first of these is a synthetic method that ensures deterministic doping with single atoms and the second is to expand the range of dopants available.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"35 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138588960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanocavity enhanced photon coherence of solid-state quantum emitters operating up to 30 K 纳米腔增强了工作在30k以下的固态量子发射器的光子相干性

Materials for Quantum Technology Pub Date : 2023-08-31 DOI: 10.1088/2633-4356/acf5c0

A. Brash, Jake Iles-Smith

引用次数: 0

Structural properties of graded InxGa1-xAs metamorphic buffer layers for quantum dots emitting in the telecom bands 在电信波段发射量子点的渐变InxGa1-xAs变质缓冲层的结构特性

Materials for Quantum Technology Pub Date : 2023-08-03 DOI: 10.1088/2633-4356/aced32

Bianca Scaparra, A. Ajay, P. Avdienko, Yuyang Xue, H. Riedl, P. Kohl, B. Jonas, Beatrice Costa, Elise Sirotti, P. Schmiedeke, Viviana Villafañe, I. Sharp, E. Zallo, G. Koblmueller, J. Finley, Kai-Oliver Mueller

{"title":"Structural properties of graded InxGa1-xAs metamorphic buffer layers for quantum dots emitting in the telecom bands","authors":"Bianca Scaparra, A. Ajay, P. Avdienko, Yuyang Xue, H. Riedl, P. Kohl, B. Jonas, Beatrice Costa, Elise Sirotti, P. Schmiedeke, Viviana Villafañe, I. Sharp, E. Zallo, G. Koblmueller, J. Finley, Kai-Oliver Mueller","doi":"10.1088/2633-4356/aced32","DOIUrl":"https://doi.org/10.1088/2633-4356/aced32","url":null,"abstract":"\u0000 In recent years, there has been a significant increase in interest in tuning the emission wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing silica fiber networks. In this work, we develop and explore compositionally graded InxGa1-xAs metamorphic buffer layers (MBLs), with lattice constant carefully tailored to tune the emission wavelengths of InAs QDs towards the telecom O-band. The designed heterostructure is grown by molecular beam epitaxy (MBE), where a single layer of InAs QDs is grown on top of the MBL and is capped with a layer having a fixed indium (In) content. We investigate the structural properties of the grown MBLs by reciprocal space mapping, as well as transmission electron microscopy, and verify the dependence of the absorption edge of the MBL on the In-content by photothermal deflection spectroscopy measurements. This allows us to identify a growth temperature range for which the MBLs achieve a near-equilibrium strain relaxation for In-content up to ∼30%. Furthermore, we explore the emission wavelength tunability of QDs grown on top of a residual strained layer with a low density of dislocations. Specifically, we demonstrate a characteristic red-shift of the QD photoluminescence towards the telecom O-band (1300 nm) at low temperature. This study provides insights into the relaxation profiles and dislocation propagation in compositionally graded MBLs grown via MBE, thus paving the way for realizing MBE-grown heterostructures containing InAs QDs for advanced nanophotonic devices emitting in the telecom bands.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124935114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Band structure and spin texture of 2D materials for valleytronics: insights from spin and angle-resolved photoemission spectroscopy 用于谷电子学的二维材料的能带结构和自旋织构:来自自旋和角度分辨光谱学的见解

Materials for Quantum Technology Pub Date : 2023-07-14 DOI: 10.1088/2633-4356/acd907

F. Bussolotti, T. D. Maddumapatabandi, K. Goh

{"title":"Band structure and spin texture of 2D materials for valleytronics: insights from spin and angle-resolved photoemission spectroscopy","authors":"F. Bussolotti, T. D. Maddumapatabandi, K. Goh","doi":"10.1088/2633-4356/acd907","DOIUrl":"https://doi.org/10.1088/2633-4356/acd907","url":null,"abstract":"\u0000 In this review, we present a perspective on the use of angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) for the study of the electronic properties of semiconducting transition metal dichalcogenides (TMDCs), a prime example of two-dimensional (2D) materials for valleytronics applications. In the introductory part, we briefly describe the structural and electronic properties of semiconducting TMDCs and the main valleytronics related physical effects. After a short presentation of theoretical methods utilized in the band structure and spin texture calculation of semiconducting TMDCs, we illustrate the basic principles and methodology of photoemission techniques and then provide a detailed survey on the electronic band structure studies of these materials. In particular, by selecting and comparing seminal results in the field, we highlight the critical role played by the sample preparation strategy on the amount and quality of information that can be extracted in the ARPES investigations of TMDCs. This is followed by a detailed discussion on the impact of interface potential landscape and doping on their electronic properties, considering the importance of their contact with metal electrode and/or dielectric substrate in determining the electrical transport in real devices’ architecture. Finally, we summarize key SARPES findings on the spin texture of TMDCs and conclude by pointing out current open issues and potential directions for future photoemission-based studies on these 2D systems.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115049717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis 利用高压纳秒脉冲和光致发光光谱分析探测NV和SiV电荷态动力学

Materials for Quantum Technology Pub Date : 2023-07-12 DOI: 10.1088/2633-4356/acf750

Artur Pambukhchyan, Sizhe Weng, Indu Aravind, S. Cronin, Susumu Takahashi

{"title":"Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis","authors":"Artur Pambukhchyan, Sizhe Weng, Indu Aravind, S. Cronin, Susumu Takahashi","doi":"10.1088/2633-4356/acf750","DOIUrl":"https://doi.org/10.1088/2633-4356/acf750","url":null,"abstract":"\u0000 Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114129276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum information diode based on a magnonic crystal 基于磁振晶体的量子信息二极管

Materials for Quantum Technology Pub Date : 2023-07-10 DOI: 10.1088/2633-4356/ace603

R. Shukla, L. Chotorlishvili, V. Vijayan, Harshit Verma, A. Ernst, S. Parkin, S. K. Mishra

{"title":"Quantum information diode based on a magnonic crystal","authors":"R. Shukla, L. Chotorlishvili, V. Vijayan, Harshit Verma, A. Ernst, S. Parkin, S. K. Mishra","doi":"10.1088/2633-4356/ace603","DOIUrl":"https://doi.org/10.1088/2633-4356/ace603","url":null,"abstract":"\u0000 Exploiting the effect of nonreciprocal magnons in a system with no inversion symmetry, we propose a concept of a quantum information diode, i.e., a device rectifying the amount of quantum information transmitted in the opposite directions. We control the asymmetric left and right quantum information currents through an applied external electric field and quantify it through the left and right out-of-time-ordered correlation (OTOC). To enhance the efficiency of the quantum information diode, we utilize a magnonic crystal. We excite magnons of different frequencies and let them propagate in opposite directions. Nonreciprocal magnons propagating in opposite directions have different dispersion relations. Magnons propagating in one direction match resonant conditions and scatter on gate magnons. Therefore, magnon flux in one direction is damped in the magnonic crystal leading to an asymmetric transport of quantum information in the quantum information diode. A quantum information diode can be fabricated from an yttrium iron garnet (YIG) film. This is an experimentally feasible concept and implies certain conditions: low temperature and small deviation from the equilibrium to exclude effects of phonons and magnon interactions. We show that rectification of the flaw of quantum information can be controlled efficiently by an external electric field and magnetoelectric effects.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122070805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing 量子传感材料集成对氮空位光致发光猝灭的抑制作用

Materials for Quantum Technology Pub Date : 2023-07-06 DOI: 10.1088/2633-4356/ace095

J. Henshaw, P. Kehayias, L. Basso, M. Jaris, R. Cong, Michael Titze, T. Lu, M. Lilly, A. Mounce

{"title":"Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing","authors":"J. Henshaw, P. Kehayias, L. Basso, M. Jaris, R. Cong, Michael Titze, T. Lu, M. Lilly, A. Mounce","doi":"10.1088/2633-4356/ace095","DOIUrl":"https://doi.org/10.1088/2633-4356/ace095","url":null,"abstract":"\u0000 The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV T\u0000 1 relaxometry measurements.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115583466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1