用于量子技术的未掺杂 IV 族异质结构的最新进展

C. Tai, Jiun-Yun Li
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引用次数: 0

摘要

半个多世纪以来,硅凭借其高流动性、稳定的氧化物界面和成熟的制造技术,一直是数字计算的核心材料。虽然摩尔定律似乎在通过各种技术进一步推进,以延长其失效日期,但一些需要处理时间呈指数增长的棘手问题却无法在合理的时间范围内得到解决。与此同时,量子计算是一种很有前途的工具,对于某些类型的问题,它的计算效率远远高于经典计算。要实现实用的量子计算机,第四族半导体异质结构上的量子点具有退相干时间长、可扩展性强以及与硅超大规模集成电路技术兼容等优点,因此大有可为。在这篇综述中,我们首先介绍了自 2000 年以来第四族非掺杂异质结构的发展,并回顾了这些非掺杂异质结构中的载流子传输特性。我们还回顾了 Ge 基异质结构中的空穴有效质量、自旋轨道耦合和有效 g 因子,最后做了简要总结。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent progress in undoped group-IV heterostructures for quantum technologies
Silicon has been a core material for digital computing owing to its high mobility, stability oxide interface, mature manufacturing technologies for more than half a century. While Moore’s law seems to further advance via various technologies to extend its expiration date, some intractable problems that requires processing times growing exponentially cannot be solved in a reasonable scale of time. Meanwhile, quantum computing is a promising tool to perform calculations much more efficiently than classical computing for certain types of problems. To realize a practical quantum computer, quantum dots on group-IV semiconductor heterostructures are promising due to the long decoherence time, scalability, and compatibility with the Si VLSI technology. In this review, we start with the advancement of group-IV undoped heterostructures since 2000 and review carrier transport properties in these undoped heterostructure. We also review the hole effective masses, spin-orbit coupling, and effective g-factors in the Ge-based heterostructures and conclude with a brief summary.
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