Inverse design and characterization of compact, broadband, and low-loss chip-scale photonic power splitters

S. Hansen,, Guillermo Arregui Bravo, A. Babar, R. Christiansen, Søren Stobbe
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Abstract

The scalability of integrated photonics hinges on low-loss chip-scale components, which are important for classical applications and crucial in the quantum domain. An important component is the power splitter, which is an essential building block for interferometric devices. Here, we use inverse design by topology optimization to devise a generic design framework for developing power splitters in any material platform, although we focus the present work on silicon photonics. We report on the design, fabrication, and characterization of silicon power splitters and explore varying domain sizes and wavelength spans. This results in a set of power splitters tailored for ridge, suspended, and embedded silicon waveguides with an emphasis on compact size and wide bandwidths. The resulting designs have a footprint of 2 μm x 3 μm and exhibit a remarkable 0.5-dB bandwidths exceeding 300 nm for the ridge and suspended power splitters and 600 nm for the embedded power splitter. We fabricate the power splitters in suspended silicon circuits and characterize the resulting devices using a cutback method. The experiments confirm the low excess loss, and we measure a 0.5-dB bandwidth of at least 245 nm -- limited by the wavelength range of our lasers.
紧凑型、宽带和低损耗芯片级光子功率分配器的逆向设计和特性分析
集成光子学的可扩展性取决于低损耗芯片级元件,这些元件对经典应用非常重要,对量子领域也至关重要。功率分配器就是其中一个重要组件,它是干涉装置的基本构件。在这里,我们利用拓扑优化反向设计来设计一个通用设计框架,用于在任何材料平台上开发功率分配器,尽管我们目前的工作重点是硅光子学。我们报告了硅功率分配器的设计、制造和表征,并探索了不同的畴尺寸和波长跨度。最终,我们设计出了一套适用于脊状、悬浮和嵌入式硅波导的功率分配器,其重点在于紧凑的尺寸和宽带宽。这些设计的占地面积为 2 μm x 3 μm,山脊式和悬浮式功分器的 0.5 分贝带宽超过 300 nm,嵌入式功分器超过 600 nm。我们在悬浮硅电路中制造了功分器,并使用回切方法对所产生的器件进行了表征。实验证实,过量损耗很低,我们测量到的 0.5 分贝带宽至少为 245 nm,这受到我们激光器波长范围的限制。
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