Yueguang Zhou, Yuhui Yang, Yujing Wang, A. Koulas‐Simos, C. Palekar, I. Limame, Shulun Li, Hanqing Liu, H. Ni, Zhichuan Niu, Kresten Yvind, N. Gregersen, M. Pu, S. Reitzenstein
{"title":"GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots","authors":"Yueguang Zhou, Yuhui Yang, Yujing Wang, A. Koulas‐Simos, C. Palekar, I. Limame, Shulun Li, Hanqing Liu, H. Ni, Zhichuan Niu, Kresten Yvind, N. Gregersen, M. Pu, S. Reitzenstein","doi":"10.1088/2633-4356/ad5823","DOIUrl":null,"url":null,"abstract":"\n This study investigates nanobeam cavities on a GaAs-on-insulator chip with InAs quantum dots, including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter coupling. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70% and a maximum Purcell factor of approximately 100. Experimentally, these devices have a $Q$ factor of about 1300, and comparing the lifetime of quantum dots in on-resonance and off-resonance conditions, a Purcell factor of 10.46±0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g(2)(0) = 0.295. Our results demonstrate the high potential of nanobeam cavity on a GaAs-on-insulator platform for quantum photonic applications.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"26 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials for Quantum Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2633-4356/ad5823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This study investigates nanobeam cavities on a GaAs-on-insulator chip with InAs quantum dots, including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter coupling. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70% and a maximum Purcell factor of approximately 100. Experimentally, these devices have a $Q$ factor of about 1300, and comparing the lifetime of quantum dots in on-resonance and off-resonance conditions, a Purcell factor of 10.46±0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g(2)(0) = 0.295. Our results demonstrate the high potential of nanobeam cavity on a GaAs-on-insulator platform for quantum photonic applications.
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