IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)最新文献_第8页

The chaotic character of ion relaxation oscillation in microwave tubes 微波管中离子弛豫振荡的混沌特性

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414254

Y. Gong, H. Gong, Wenxiang Wang, Changjian Tang

引用次数: 0

Research on velvet's multi-pulse emitting 丝绒多脉冲发射特性研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414181

L. Xia, Kaizhi Zhang, Linwen Zhang

引用次数: 0

The analysis of the (100)surface of GaAs for NEA photocathode with XPS 用XPS分析NEA光电阴极GaAs(100)表面

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414180

R. Fua, B. Chang, P. Gao

引用次数: 44

Study of the atomic and molecular radiation in shadow mask PDP 荫罩PDP中原子和分子辐射的研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414188

Y. Tu, Lanlan Yang, Xiong Zhang, Baoping Wang, H. Yin, L. Tong

引用次数: 3

Angle-dependent X-ray photoelectron spectroscopy study of the evolution of GaAs(Cs,O) surface during "high-low temperature" activation “高低温”活化过程中GaAs(Cs,O)表面演化的x射线光电子能谱研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414230

Du Xiao-qing, Chang Ben-kang

{"title":"Angle-dependent X-ray photoelectron spectroscopy study of the evolution of GaAs(Cs,O) surface during \"high-low temperature\" activation","authors":"Du Xiao-qing, Chang Ben-kang","doi":"10.1109/IVESC.2004.1414230","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414230","url":null,"abstract":"In this paper, quantitative analysis of the evolution of GaAs(Cs,O) surface was made during negative electron affinity (NEA) activation using angle-dependent X-ray photoelectron spectroscopy (XPS). The thickness, chemical compositions and percentage of each element of GaAs(Cs,O) surface layers after \"high-temperature\" single-step activation and \"high-low temperature\" two-step activation were obtained. It was found that compared to single-step activation, the thickness of GaAs-O interface barrier had a remarkable decrease, the degree of As-O bond became much smaller and the Ga-O bond became dominating, and at the same time the thickness of (Cs,O) layer also had a small deduction but the ratio of Cs to O had no change after two-step activation. To explore the influences of the evolution of GaAs(Cs,O) surface layers on photoemission, surface barrier models on basis of the XPS results were built for single-step activation and two-step activation, and the respective theoretic surface escape probability of electrons was calculated. The results of theoretic calculation can be consistent with the ones of experiment. According to calculation the decrease of thickness of GaAs-O interface barrier has a main effect on the increase of surface escape probability, which explains why higher sensitivity is achieved after two-step activation than single-step activation. It was also found that to explain the variations of long threshold wavelength of photoemission during activation, the evolution of the height of GaAs-O interface barrier and scattering characteristics of (Cs,O) layer with GaAs(Cs,O) surface structure is necessary to further consider.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122394733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A simple method to measure work function 一种测量功函数的简单方法

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414193

Lu Wei-yuan, Zhen Youlai, Zhang Jingzhi

引用次数: 0

High current density M-type cathodes for VEDs ved用高电流密度m型阴极

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414168

Ji Li, Zhiqiang Yu, Wensheng Shao, Ke Zhang, Yujuan Gao, Haiqing Yuan, Jinhong Jiang, Kaizhi Huang, Hui Wang, Qilue Chen, Suqiu Yan

{"title":"High current density M-type cathodes for VEDs","authors":"Ji Li, Zhiqiang Yu, Wensheng Shao, Ke Zhang, Yujuan Gao, Haiqing Yuan, Jinhong Jiang, Kaizhi Huang, Hui Wang, Qilue Chen, Suqiu Yan","doi":"10.1109/IVESC.2004.1414168","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414168","url":null,"abstract":"The emission performance and life of most VEDs (vacuum electron devices) is directly related to the capability of cathode. As the main force of thermionic sources, dispenser cathodes made of a porous tungsten pellet impregnated with Ba, Ca aluminates, such as M type cathodes (coated with Osmium, Iridium or Osmium/Ruthenium) and scandate cathodes, play an important role in the electron beam devices. This paper presents some results obtained during the investigation of M-type cathodes used in TWTs (traveling wave tubes) and klystrons. The investigation covers the following experiments: (i) the lifetime test in close space diode to evaluate the long term life capability of M-type cathodes operated at different temperatures and loads to fulfill the missions for VEDs; (ii) the assessment of performances of M-type cathode delivery high current density up to 32A/cm/sup 2/ in standard Pierce electron gun; (iii) the application of M-type cathode in practical X-band dual mode TWTs and Ka, X band MBKs (multi beam klystrons); (iv) the investigation of high reliable \"quasi ceramic\" potted heaters that shorten the warm-up time significantly. The experimental approach such as cathode structures, test vehicles and experimental techniques are also demonstrated in this paper.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126029664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A new method for study of the evaporation rate of cathodes 一种研究阴极蒸发速率的新方法

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414203

Yanwen Liu, Honglai Zhang

引用次数: 1

Field emission properties of nanocrystalline carbon films generated in microwave gas discharge plasma 微波气体放电等离子体中纳米晶碳膜的场发射特性

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414159

S. Suzdaltsev, R. Yafarov

引用次数: 0

Analysis of the transverse energy distribution of HopFED HopFED横向能量分布分析

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414175

Xiaobing Zhang, W. Lei, Min Liu, Laibin Zhang, D. den Engelsen, Xuedong Zhou, Q. Fei

{"title":"Analysis of the transverse energy distribution of HopFED","authors":"Xiaobing Zhang, W. Lei, Min Liu, Laibin Zhang, D. den Engelsen, Xuedong Zhou, Q. Fei","doi":"10.1109/IVESC.2004.1414175","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414175","url":null,"abstract":"For HopFED applications without a flu spacer the normal energy distribution is less important than the energy distribution in the direction perpendicular to the propagation of the beam, the transverse energy Et. The transverse energy distribution of electrons leaving the exit hole of a hop spacer plate in a HopFED was measured experimentally and analyzed. These electrons were accelerated in a uniform field onto the anode screen. The luminance distribution of the spot on the screen was in our experimental set up largely determined by the transverse energy distribution of the electron beam. A directly grown carbon nanotube (CNT) field emitters as electron source was used. The system was positioned in a vacuum chamber with a glass window for viewing and measuring the electron spot. A digital camera recorded the luminance distribution of the electron spot on the phosphor screen. Software, which was originally developed for CRT spot size measurement, had to be improved for our luminance analysis. The analyses of the luminance distribution show that the transverse energy is rather low and that a HOPFED without a flu spacer will have good beam directionality.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114850238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0