IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)最新文献_第10页

Thermal analysis of electron gun for traveling wave tubes 行波管电子枪热分析

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414185

K. S. Bhata, K. Sreedevib, M. Ravi

引用次数: 8

The research of a funnel shaped micro-channel plate 漏斗型微通道板的研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414277

Fu Hong, Chang Ben kang, Gao Ping

引用次数: 0

Microscopic study of work function of Ag/Pt(111) surface alloy Ag/Pt(111)表面合金功函数的显微研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414273

K. Miya, A. Sinsarp, M. Sasaki, S. Yamamoto

引用次数: 0

The effect of surface sp2/sp3 bonding ratios of carbon films on the field emission property 碳膜表面sp2/sp3键合比对场发射性能的影响

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414145

Zhanling Lu, Binglin Zhang, N. Yao, Xinyue Zhang, Bingxian Ma, Zhiqin Fan

{"title":"The effect of surface sp2/sp3 bonding ratios of carbon films on the field emission property","authors":"Zhanling Lu, Binglin Zhang, N. Yao, Xinyue Zhang, Bingxian Ma, Zhiqin Fan","doi":"10.1109/IVESC.2004.1414145","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414145","url":null,"abstract":"Summary form only given. Amorphous carbon films were deposited on Si substrates by using microwave plasma chemical vapor deposition (MPCVD). It is often noted that a conditioning of carbon film is required before the onset of reproducible field emission. It involves the cycling of the voltage up and down over several cycles etc, which may be accompanied by surface damage and phase changing. The exact nature of this conditioning step and the role of the damage-induced surface structure is not fully understood. In this paper, the change of surface bonding structure by cycling of the voltage up and down, and the effect of sp2/sp3 bonding ratios of the carbon films on field emission are investigated. The surface microstructure and sp2/sp3 bonding ratios were analyzed by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Field emission measurements of the films were carried out in a vacuum chamber with a base pressure of below 5/spl times/10-5Pa. The surface bonding structure of the as-deposited film was mainly sp2 component before doing field emission measurement. After emission conditioning treatment by cycling of the voltage up and down over several cycles, the surface sp2/sp3 bonding ratio of 1.25 was got, and the I-V characteristic of the field emission was getting reproducible and stable. The current density of 0.28 mA/cm/sup 2/ was obtained at electric field of 4.8 V//spl mu/m. When the electric field was increased to 6.85 V//spl mu/m, the current density was dramatically decreased to 0.067 mA/cm/sup 2/, and the surface sp2/sp3 bonding ratio was decreased to 0.53. It was revealed that surface sp2 phase in amorphous carbon films may be the main factor in obtaining low turn-on field and high current density.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129865254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Operating characteristics of cathodes used for microwave vacuum-electronic devices 微波真空电子器件用阴极的工作特性

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414250

V. G. Vorozheikin, V. Kozlov

{"title":"Operating characteristics of cathodes used for microwave vacuum-electronic devices","authors":"V. G. Vorozheikin, V. Kozlov","doi":"10.1109/IVESC.2004.1414250","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414250","url":null,"abstract":"Ensuring the emissive reliability of microwave vacuum-electronic devices (MVED) is closely related to knowledge of the main operating characteristics of cathodes, primarily of cathode emissive ability and potential (resource) life. In research practice it is convenient to perform an estimate of cathode emissive ability via pre-heated curve (Tsarev and Nikonov, 1958) from which the knee temperature T/sub kn/ is found. The knee temperature T/sub kn/, defining the minimum temperature at which the cathode provides operating current density j/sub op/ required for rated operation of MVED, is directly proportional to the effective work function of cathode and, thus, one-to-one corresponds to cathode emissive ability at the given current density j/sub op/ (Nabokov nd Dudkin,1968). Information ability of the pre-heated curves method for ensuring emissive reliability of MVED was noted by Vorozheikin and Kozlov (2002). Long term (more than 30 years) investigations of cathodes emissive ability both in experimental models and in real devices allowed us to determine its dependence on cathode operating mode (on cathode operating temperature T/sub op/ and operating current density j/sub op/) and operating time (under conditions excluding an effect of environment factors on operation). In this paper some dependences are given for oxide cathodes (OC), metal-porous (dispenser) M-type cathodes coated with film on the basis of Os (MC), scandium metal-porous cathodes (ScC).","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126109257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristic of the cold cathode with secondary electron emission 二次电子发射冷阴极的特性

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1413954

Lei Wei, Zhang Xiaobing, Z. Xuedong, Zhu Zuoya, Lou Chao-gang

{"title":"Characteristic of the cold cathode with secondary electron emission","authors":"Lei Wei, Zhang Xiaobing, Z. Xuedong, Zhu Zuoya, Lou Chao-gang","doi":"10.1109/IVESC.2004.1413954","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1413954","url":null,"abstract":"In the electron beam device, the cathode provides electrons with the initial energy. According to its emission mechanism, the electron source includes thermal cathode, cold cathodes, etc. With the cold cathode, the power consumption of the cathode is decreased. The delay time of the electron emission after the applying of voltage is very small in a device with a cold cathode. However, the perpendicular energy distribution of the electrons emitted from the cold cathode is a little larger than that of the thermionic cathode. An additional focusing structure has to be designed if the cold cathode is applied in the RF amplifier. In cathode ray tube and the field emission display panel, the electron current emitted from the cathode has to be modulated. Because of the high electric field in front of the cold cathode, the swing of the voltage for the current modulation is a little high. In this paper, an insulator tunnel is adopted in a cold cathode. When the primary electron bombarded on the surface of the insulator tunnel, the secondary electrons are generated. This paper studies the characteristic of the cold cathode with the secondary electron emission. The structure of the insulator tunnel is designed. As results, the perpendicular energy distribution of the electrons has been decreased effectively. Because the initial energy of the secondary electron is often smaller than that of the primary electron, the driving voltage for the current modulation is also decreased after the introduction of the insulator tunnel.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ion laser cathode 离子激光阴极

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414263

Zhang Cui-wei

{"title":"Ion laser cathode","authors":"Zhang Cui-wei","doi":"10.1109/IVESC.2004.1414263","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414263","url":null,"abstract":"This article introduced high reliable and long life heater cathode for ceramic tungsten disks ion laser. The structural cathode has uniform operating temperature, long life and characteristic of ion bombardment resistance. It can provide larger emission current than applied required current. From the eighties till now, developing ion laser by us mainly uses general heater stored cathode of tungsten sponges. Beryllium oxide tube ion laser uses paraxonic tungsten sponge cathode. The cathode operates at 3v voltage and 14-18A current. Laser power is up to practical requirement and more than 25mw, 50mw and l00mw respectively. Ceramic tungsten disks ion laser uses coaxial tungsten sponge cathode and operates at 4v voltage and 23 /spl sim/ 28A current. Laser power is up to practical requirement: l.0w, 3.0w, 5w, l0w, 15w respectively. At the later of nineties, helical incense - coil type heater stored cathode of tungsten sponge was developed. It operates at 2.8V voltage and 35 /spl sim/ 40A current. The power is up to practical requirement and more than 20w. Because improved cathode structure, the operating temperature of the cathode is more uniform. Accurate machining to cathode size and smooth and active material have different change and selection. This not only reduces ion bombardment, sputter and other possible pernicious effects, but also increases used life, operating stability and thermoelectron emission current. The cathode includes the emitting material with low work function, which consists of barium oxide, calcium oxide and aluminium hydroxide according to optimum proportion and is calcined. The cathode is widely used for argon and krypton ion laser as its particular structure, large emission current, stability and reliability.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"341 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124214990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The design of low-light night seeing helmet 微光夜视头盔的设计

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414264

Qiu Yafeng, Qian Yunsheng, Liu Lei, Fu Rongguo, Chang Benkang

引用次数: 1

Ba/O dispenser cathodes with high ba flow Ba/O分配器阴极具有高Ba流量

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414196

O. Kultashev

引用次数: 0

Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD 低压MOCVD生长的压源控制双极光电晶体管

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414235

S. Tan, H.R. Chen, M. Chu, M. Hsu, Lin Ts, W. Lour

引用次数: 0