IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)最新文献

Numerical and experimental analysis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications 用于低压低功耗电路的InP/InGaAs隧道发射极双极晶体管(TEBT)的数值和实验分析

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-12-01 DOI: 10.1109/IVESC.2004.1414240

S. Cheng, Chun-Yuan Chen, Jing-Yuh Chen, H. Chuang, Wen-Chau Liu, W. Chang

{"title":"Numerical and experimental analysis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications","authors":"S. Cheng, Chun-Yuan Chen, Jing-Yuh Chen, H. Chuang, Wen-Chau Liu, W. Chang","doi":"10.1109/IVESC.2004.1414240","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414240","url":null,"abstract":"An InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications are comprehensively studied and demonstrated. Based on the detailed numerical tools, the insights into carrier transport of TEBT are investigated. Due to the employment of an appropriate tunneling emitter barrier, holes are confined effectively. So, the emitter injection efficiency is remarkably enhanced. Experimentally, the studied HBT with a thin tunneling barrier structure shows a very small offset voltage of 40mV and an extremely wide collector current operation regime. The low offset voltage is effective to improve amplifier efficiency at low power supply voltages. Furthermore, the operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultra-low collector current of 3.9/spl times/10-12A (1.56/spl times/10-7A/cm/sup 2/). This is certainly suitable for low-voltage and low-power circuit applications.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"81 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132419454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The state and art of cathode technology in high power klystron 大功率速调管中阴极技术的现状与发展

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414166

Yao-gen Ding

引用次数: 3

Research on the design parameters of RF system in a plasma-filled helix TWT 等离子体填充螺旋行波管中射频系统设计参数的研究

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414283

Gong Zhonglin, Zhou Limin, Zhang Jinlin

引用次数: 1

X-ray sources with carbon field emitter cathodes 碳场发射极x射线源

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414251

W. Knapp, D. Schleussner, S. Bjeoumikhov, H. Wolff, N. Langhoff

引用次数: 1

The design and capability test of miniature Penning ion source 微型彭宁离子源的设计与性能试验

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414281

K. Xiao, M. Zhou, X. Tan

引用次数: 0

Low temperature carbon nanotube growth on Ni-CaF/sub 2/ 2 coated sodalime glass substrate using thermal CVD method 低温碳纳米管在Ni-CaF/ sub2 / 2镀膜钠盐玻璃衬底上的热CVD生长

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414174

Y. Ren, D. Zhu, Dejie Li

引用次数: 1

The low-voltage, multibeam, electro vacuum amplifier of average power of the millimeter wave band with crosssection extended type of interaction on the basis of the field emission cathode from carbon nanotubes 基于碳纳米管场发射阴极的毫米波平均功率、截面扩展型相互作用的低压多束流电真空放大器

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414184

J.F. Zakharchenko, I. Sinitsyn, J.V. Guljaev

{"title":"The low-voltage, multibeam, electro vacuum amplifier of average power of the millimeter wave band with crosssection extended type of interaction on the basis of the field emission cathode from carbon nanotubes","authors":"J.F. Zakharchenko, I. Sinitsyn, J.V. Guljaev","doi":"10.1109/IVESC.2004.1414184","DOIUrl":"https://doi.org/10.1109/IVESC.2004.1414184","url":null,"abstract":"Application of field emission cathodes in modern electrovacuum microwave devices vary actually. In this case because of absence of power expenses for heating of the cathode and for work of the appropriate source of a current the efficiency raises, instant availability for service of the device is provided and also the design of an electronic gun and the device as a whole becomes simpler due to absence of high-temperature constructional elements. But application of the field emission cathode in a new class of electrovacuum of devices - in low-voltage multibeam amplifiers of average power of a millimeter wave band with cross-section extended type of the interaction, is especially perspective. It speaks that, that in comparison with traditional types of amplifiers of a traveling wave on spirals or chains of the connected resonators in the given class there is possible application of the distributed multibeam electronic guns on the basis of highly effective matrix graphite field emission cathodes with a film covering from carbon nanotubes and nanoclusters.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132510439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The linear theory of thermal plasma free-electron laser 热等离子体自由电子激光的线性理论

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414288

L. Wenxin, Yang Ziqiang, Liang Zheng

引用次数: 0

Stretched exponential behavior of degradation in oxide cathodes 氧化物阴极降解的拉伸指数行为

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414149

B. Weon, J. Je

引用次数: 0

Creation of powerful broadband low-voltage small-sized grid-controlled pulse TWT over decimetre waves 在分米波上创建强大的宽带低压小型电网控制脉冲行波管

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI: 10.1109/IVESC.2004.1414285

D. Arhipov, E. M. Ilyina, V. Kudryashov, V. I. Rogovin, V. N. Usov

引用次数: 0