Numerical and experimental analysis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-12-01 DOI:10.1109/IVESC.2004.1414240

S. Cheng, Chun-Yuan Chen, Jing-Yuh Chen, H. Chuang, Wen-Chau Liu, W. Chang

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Abstract

An InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications are comprehensively studied and demonstrated. Based on the detailed numerical tools, the insights into carrier transport of TEBT are investigated. Due to the employment of an appropriate tunneling emitter barrier, holes are confined effectively. So, the emitter injection efficiency is remarkably enhanced. Experimentally, the studied HBT with a thin tunneling barrier structure shows a very small offset voltage of 40mV and an extremely wide collector current operation regime. The low offset voltage is effective to improve amplifier efficiency at low power supply voltages. Furthermore, the operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultra-low collector current of 3.9/spl times/10-12A (1.56/spl times/10-7A/cm/sup 2/). This is certainly suitable for low-voltage and low-power circuit applications.

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用于低压低功耗电路的InP/InGaAs隧道发射极双极晶体管(TEBT)的数值和实验分析

对一种适用于低压低功耗电路的InP/InGaAs隧道发射极双极晶体管(TEBT)进行了全面的研究和论证。基于详细的数值工具，对TEBT的载流子输运进行了深入的研究。由于采用了合适的隧穿发射极势垒，孔洞得到了有效的约束。因此，喷射器的喷射效率得到了显著提高。实验结果表明，具有薄隧穿势垒结构的HBT具有非常小的偏置电压(40mV)和极宽的集电极电流工作范围。低偏置电压可以有效地提高放大器在低电源电压下的效率。此外，集电极电流(10-12到10-1 A)的工作范围大于11十年。即使器件在3.9/spl倍/10-12A (1.56/spl倍/10-7A/cm/sup 2/)的超低集电极电流下工作，也可获得3的电流增益。这当然适用于低压和低功耗电路应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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