低压MOCVD生长的压源控制双极光电晶体管

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414235

S. Tan, H.R. Chen, M. Chu, M. Hsu, Lin Ts, W. Lour

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引用次数: 0

摘要

制备了具有相同发射极总面积的单发射极和双发射极异质结光电晶体管，并对其进行了定性研究。设计了两种de - hpt的双发射器，其面积比分别为1:1和1:2。施加到第二发射极的正电压和负电压都可以控制和增强集电极光电流。研究发现，1:2和1:1 de - hpt的光学增益分别是SE-HPT的1.85倍和1.5倍。

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Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD

Single- and double-emitter heterojunction phototransistors with the same total emitter area have been fabricated and qualitatively investigated. The double emitters in two kinds of DE-HPTs are designed to have area ratio of 1:1 and 1:2, respectively. Both a positive and a negative voltage applied to the second emitter can control and enhance the collector photocurrent. It is found that 1:2 and 1:1 DE-HPTs exhibit 1.85- and 1.5-fold optical gain of that from a SE-HPT, respectively.

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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