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1988., IEEE MTT-S International Microwave Symposium Digest最新文献

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High performance parallel coupled microstrip filters 高性能并行耦合微带滤波器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22066
A. Riddle
{"title":"High performance parallel coupled microstrip filters","authors":"A. Riddle","doi":"10.1109/MWSYM.1988.22066","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22066","url":null,"abstract":"A construction technique is described that allows microstrip parallel-coupled filters to have greater passband symmetry while largely removing the parasitic passband at twice the center frequency. The filter design extends the odd mode phase length by allowing the coupled lines to overlap with lines outside the resonator proper, i.e. the coupling gap of the resonator is extended out onto the 50- Omega lines. The even-mode length has been set by the distance between the 50- Omega lines. Thus, the reference plane for the even mode has been moved into the resonator. This configuration makes the odd-mode length longer than the even mode and thus compensates for the phase velocity difference between modes.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114824506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 108
U-band shield suspended-stripline (SSL) Gunn DRO and VCO u波段屏蔽悬挂带状线(SSL) Gunn DRO和VCO
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22155
Zhen-Qi Huang
{"title":"U-band shield suspended-stripline (SSL) Gunn DRO and VCO","authors":"Zhen-Qi Huang","doi":"10.1109/MWSYM.1988.22155","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22155","url":null,"abstract":"A 40-60-GHz-band integrated circuit dielectric resonator oscillator (DRO) in suspended stripline (SSL) is described. This Gunn DRO provides an output power of more than 17 dBm, and a mechanical tuning range of 1.5 GHz at 54 GHz has been obtained. A varactor-controlled oscillator (VCO) with an output power of 15 dBm across its 1000-MHz electronic tuning bandwidth at 53 GHz is also reported.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124310135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An SIS mixer for 85-116 GHz using inductively shunted edge-junctions 使用电感分流边结的85-116 GHz SIS混频器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22075
S. Pan, A. Kerr, M. Feldman, A. Kleinsasser, J. Stasiak, R. Sandstrom, W. Gallagher
{"title":"An SIS mixer for 85-116 GHz using inductively shunted edge-junctions","authors":"S. Pan, A. Kerr, M. Feldman, A. Kleinsasser, J. Stasiak, R. Sandstrom, W. Gallagher","doi":"10.1109/MWSYM.1988.22075","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22075","url":null,"abstract":"A superconductor-insulator-superconductor (SIS) mixer is described that has a broadband integrated tuning structure. The mixer is tunable from 85-116 GHz, and a midband has a noise temperature of 6+or-6 K DSB (double-side-band) and unity DSB conversion gain. Referred to the mixer input flange, the receiver noise temperature is 9+or-6 K at midband. The integral tuning structure consists of a short two-wire transmission line stub with a quarter-wave superconducting transmission line as a DC and intermediate frequency (IF) block. Despite the relatively soft I-V curves of the two-junction arrays used in these mixers, low mixer noise temperature and conversion loss were achieved.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126212841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A general-purpose computer program for the Volterra-series analysis of nonlinear microwave circuits 非线性微波电路voltera -series分析的通用计算机程序
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22038
S. Maas
{"title":"A general-purpose computer program for the Volterra-series analysis of nonlinear microwave circuits","authors":"S. Maas","doi":"10.1109/MWSYM.1988.22038","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22038","url":null,"abstract":"A computer program is described that performs a Volterra-series analysis of a weakly nonlinear microwave circuit having an arbitrary topology. The program uses the method of nonlinear currents and a nodal formulation. In this approach, each nonlinear circuit element is described as a linear element in parallel with a set of current sources; each current source represents a single order (greater than one) of the mixing products, and its current is a nonlinear function of the node-voltage components at lower-order mixing frequencies. The weakly nonlinear circuit is reduced to a linear circuit, which contains the linear elements and the linear parts of the nonlinear elements, and a set of excitation sources. The program is intended primarily for use in the design of microwave circuits; its catalog of circuit elements includes the distributed elements necessary for such work. Because the program formulates and solves the circuit equations numerically, the user need not simplify either the circuit or the model of the solid-state device, or make any of the other common simplifying assumptions.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132370522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
A high electron mobility transistor with a mushroom gate fabricated by focused ion beam lithography 用聚焦离子束光刻技术制备了一种具有蘑菇栅的高电子迁移率晶体管
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22024
Y. Sasaki, K. Nagahama, K. Hosono, T. Katoh, M. Komaru
{"title":"A high electron mobility transistor with a mushroom gate fabricated by focused ion beam lithography","authors":"Y. Sasaki, K. Nagahama, K. Hosono, T. Katoh, M. Komaru","doi":"10.1109/MWSYM.1988.22024","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22024","url":null,"abstract":"A superlow-noise HEMT (high-electron-mobility transistor) with a mushroom-shaped quarter-micrometer gate was fabricated using focused ion-beam lithography. The mixed exposure of Be/sup ++/ and Si/sup ++/ focused ion beams was used to form T-shaped resist profiles. This method has the advantages of a high reproducibility and controllability of resist profiles. The gate resistance was extremely reduced by producing this mushroom-shaped gate. As a result, the fabricated HEMT showed a minimum noise figure (NF/sub min/) of 0.68 dB, with an associated gain (G/sub a/) of 9.7 dB at 12 GHz. This device also showed an NF/sub min/ of 0.83 dB with a G/sub a/ of 7.7 dB at 18 GHz.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131523955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise 一种94 GHz低噪声GaAs场效应管振荡器，采用低语通道介质谐振模式和一种新的推推式结构，可降低1/f转换噪声
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22079
L. Bermudez, P. Guillon, J. Obregon, A. Bert
{"title":"A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise","authors":"L. Bermudez, P. Guillon, J. Obregon, A. Bert","doi":"10.1109/MWSYM.1988.22079","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22079","url":null,"abstract":"Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"SE-8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126576655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Commensurate-line, microstrip, band-pass filters 通约线，微带，带通滤波器
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22065
M. Gat
{"title":"Commensurate-line, microstrip, band-pass filters","authors":"M. Gat","doi":"10.1109/MWSYM.1988.22065","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22065","url":null,"abstract":"The commensurate-line bandpass filter topology, also known as the shunt-shorted-stub topology, is considered. Kuroda's network transformations are used to synthesize bandwidth-dependent structures. The distribution of the grounded stub impedances, which is also bandwidth-dependent, is discussed in detail for the 40-160% range. The realization of tee-junctions, and the method used to ground the stubs, are the key to this topology. Test results for N=11 filters show excellent correlation between test and simulated data. Sensitivity, phase and temperature stability, rejection of second harmonic, and microstrip models are also discussed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132744260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A monolithic reduced-size Ku-band SPDT FET switch 一种单片小尺寸ku波段SPDT场效应管开关
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22053
D. Bryant
{"title":"A monolithic reduced-size Ku-band SPDT FET switch","authors":"D. Bryant","doi":"10.1109/MWSYM.1988.22053","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22053","url":null,"abstract":"A GaAs Ku-band monolithic single-pole double-throw (SPDT) FET switch has been designed and demonstrated. Small-signal insertion loss is less than 1.4 dB over a 14-GHz-to-18-GHz bandwidth with a VSWR (voltage standing-wave ratio) less than 1.5:1. The common terminal-to-off-channel isolation exceeds 18 dB. The switching is achieved with a -4.5-V signal on the gate of the on-channel FET with the other gate at 0 V. The switching current requirement is only the reverse bias gate leakage current (typically 3 mu A). Large-signal performance is similar with a -10-V control signal. The small chip size, 1.3 mm*1.3 mm*0.15 mm, permits more than 2300 monolithic switches to be fabricated on a single 3-in GaAs wafer.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127411964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
PIN diode limiter spike leakage, recovery time, and damage PIN二极管限制钉泄漏，恢复时间，和损坏
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22029
R. Tan, A. Ward, R. Garver, H. Brisker
{"title":"PIN diode limiter spike leakage, recovery time, and damage","authors":"R. Tan, A. Ward, R. Garver, H. Brisker","doi":"10.1109/MWSYM.1988.22029","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22029","url":null,"abstract":"A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115918582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
New dispersion models for open suspended substrate microstrips 开放悬浮衬底微带的新色散模型
1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI: 10.1109/MWSYM.1988.22057
R. Tomar, P. Bhartia
{"title":"New dispersion models for open suspended substrate microstrips","authors":"R. Tomar, P. Bhartia","doi":"10.1109/MWSYM.1988.22057","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22057","url":null,"abstract":"Dispersion models for the effective dielectric constant and impedance of open suspended substrate microstrips are presented. For frequencies above 20 GHz, the accuracy of these models (in reproducing the exact full-wave data) is better than 1% for the effective dielectric constant and mostly better than 2.5% for the impedance.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124361558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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