{"title":"PIN二极管限制钉泄漏，恢复时间，和损坏","authors":"R. Tan, A. Ward, R. Garver, H. Brisker","doi":"10.1109/MWSYM.1988.22029","DOIUrl":null,"url":null,"abstract":"A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"PIN diode limiter spike leakage, recovery time, and damage\",\"authors\":\"R. Tan, A. Ward, R. Garver, H. Brisker\",\"doi\":\"10.1109/MWSYM.1988.22029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PIN diode limiter spike leakage, recovery time, and damage
A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<>
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