使用电感分流边结的85-116 GHz SIS混频器

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22075

S. Pan, A. Kerr, M. Feldman, A. Kleinsasser, J. Stasiak, R. Sandstrom, W. Gallagher

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引用次数: 6

摘要

介绍了一种具有宽带集成调谐结构的超导体-绝缘体-超导体(SIS)混频器。混频器在85-116 GHz范围内可调，中频噪声温度为6+或6 K DSB(双频带)和单位DSB转换增益。参考混频器输入法兰，接收器噪声温度在中频为9+或6 K。整体调谐结构由一根短的两线传输线短根和一根四分之一波超导传输线作为直流和中频块组成。尽管在这些混频器中使用的双结阵列的I-V曲线相对较软，但仍然实现了低混频器噪声、温度和转换损耗

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An SIS mixer for 85-116 GHz using inductively shunted edge-junctions

A superconductor-insulator-superconductor (SIS) mixer is described that has a broadband integrated tuning structure. The mixer is tunable from 85-116 GHz, and a midband has a noise temperature of 6+or-6 K DSB (double-side-band) and unity DSB conversion gain. Referred to the mixer input flange, the receiver noise temperature is 9+or-6 K at midband. The integral tuning structure consists of a short two-wire transmission line stub with a quarter-wave superconducting transmission line as a DC and intermediate frequency (IF) block. Despite the relatively soft I-V curves of the two-junction arrays used in these mixers, low mixer noise temperature and conversion loss were achieved.<>

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来源期刊

1988., IEEE MTT-S International Microwave Symposium Digest

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