一种94 GHz低噪声GaAs场效应管振荡器,采用低语通道介质谐振模式和一种新的推推式结构,可降低1/f转换噪声

L. Bermudez, P. Guillon, J. Obregon, A. Bert
{"title":"一种94 GHz低噪声GaAs场效应管振荡器,采用低语通道介质谐振模式和一种新的推推式结构,可降低1/f转换噪声","authors":"L. Bermudez, P. Guillon, J. Obregon, A. Bert","doi":"10.1109/MWSYM.1988.22079","DOIUrl":null,"url":null,"abstract":"Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"SE-8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise\",\"authors\":\"L. Bermudez, P. Guillon, J. Obregon, A. Bert\",\"doi\":\"10.1109/MWSYM.1988.22079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"SE-8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

介绍了采用介电谐振器设计47-94 GHz GaAs MESFET倍频器的结果。在输出端的场效应管漏极产生47 GHz的基频时,采用推-推结构。这种拓扑结构产生无噪声的倍频振荡器。该电路制造了两个版本:第一个使用TE/sub - 01 δ /模圆柱形介电谐振器。谐振腔的尺寸用计算机计算,基频为47 GHz。第二种采用平面耳语通道模式。给出了样机的实验结果。人们认为这些器件有望用于低噪声毫米波。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 94 GHz low noise GaAs FET oscillator using whispering-gallery dielectric resonator modes and a new push-push configuration reducing 1/f converted noise
Results obtained in the design of a 47-94 GHz GaAs MESFET oscillator-doubler using a dielectric resonator are presented. A push-push configuration was used for the generation of the fundamental frequency at 47 GHz in the FET drain at the output. This topology produces noiseless oscillators-doublers. Two versions of this circuit were manufactured: the first used a TE/sub 01 delta /-mode cylindrical dielectric resonator. The resonator dimensions were calculated by computer or a fundamental frequency at 47 GHz. The second used planar whispering-gallery modes. The results obtained from the prototypes are presented. It is felt these devices show promise for low-noise millimeter-wave use.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信