发布求助
文献互助 智能选刊 最新文献

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks最新文献

筛选
英文 中文
Mobile wireless communications - broadband technologies for over Gbit/sec 移动无线通信。超过Gbit/s的宽带技术
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598864
T. Takagi, K. Tsubouchi
{"title":"Mobile wireless communications - broadband technologies for over Gbit/sec","authors":"T. Takagi, K. Tsubouchi","doi":"10.1109/RFIT.2005.1598864","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598864","url":null,"abstract":"The activities of the IT-21 Center and the set up of the IT-program RR2002 of the national project for the development of mobile wireless communication technologies are introduced, and the successful results are shown as well. Then, we discuss some issues related to realizing millimeter wave broadband mobile communication systems and we make some proposals to facilitate the development of device technologies.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127585337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-mode wide-band 130 nm CMOS WLAN and GSM/UMTS 多模宽带130纳米CMOS WLAN和GSM/UMTS
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598885
J. Steinkamp, F. Henkel, P. Waldow
{"title":"Multi-mode wide-band 130 nm CMOS WLAN and GSM/UMTS","authors":"J. Steinkamp, F. Henkel, P. Waldow","doi":"10.1109/RFIT.2005.1598885","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598885","url":null,"abstract":"This paper presents a fully integrated VCO covering the requirements of four cellular phone standards GSM, DCS, PCS and UMTS as well as WLAN 802.11 a/b/g. The frequency range from 3.42 GHz up to 11.45 GHz is managed with an innovative differential switchable inductor architecture. In addition a switched capacitor array and varactors are applied for precise tuning of all necessary frequency bands. The circuit is fabricated in a 130 nm CMOS process and housed into a VQFN 48 plastic package together with a proper direct conversion Rx-frontend solution for the cellular modes. The VCO has been measured and draws less than 13 mA at a supply voltage of 1.5 V whereas the VCO core needs only 2 mA. The evaluation of the VCO was done on a FR4 board.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122446337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A SiGe down-conversion micromixer for wideband-CDMA application 用于宽带cdma应用的SiGe下变频微混频器
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598901
Sung-Huang Lee, Chih-Yu Tsai, H. Chiou
{"title":"A SiGe down-conversion micromixer for wideband-CDMA application","authors":"Sung-Huang Lee, Chih-Yu Tsai, H. Chiou","doi":"10.1109/RFIT.2005.1598901","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598901","url":null,"abstract":"This paper presents a micromixer for WCDMA applications with no external balun requirement. The transconverter cells are applied both to LO and RF port to replace the required baluns for converting the single-ended signal to differential output. Besides providing the function of balun, the transconverter cell also improves the linearity behavior. This benefits the RF input stage especially. This micromixer is realized in 0.35 um SiGe BiCMOS technology. The measured input P1 dB is -12 dBm and IIP3 is 2 dBm. The measured isolations of LO port are all higher than 35 dB. The current consumption of mixer core is about 3.5 mA.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129529255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependence of DC and microwave characteristics of InGaAs/InP composite channel HEMTs InGaAs/InP复合通道hemt直流和微波特性的温度依赖性
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598912
Y. Liu, H. Wang, K. Radhakrishnan, G. Ng, Y. Xiong
{"title":"Temperature dependence of DC and microwave characteristics of InGaAs/InP composite channel HEMTs","authors":"Y. Liu, H. Wang, K. Radhakrishnan, G. Ng, Y. Xiong","doi":"10.1109/RFIT.2005.1598912","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598912","url":null,"abstract":"Submicron high electron mobility transistors (HEMTs) lattice-matched to InP with InGaAs/InP composite channel were fabricated. Temperature dependence of DC and RF characteristics of the HEMTs were studied in the temperature range from 20 to 100 /spl deg/C. It has been found that the DC and microwave characteristics of the composite channel HEMTs are insensitive to the temperature. In particular, an increase in the maximum frequency of oscillation (f/sub max/) was observed at elevated temperature. The InP HEMTs with an InGaAs/InP composite channel shown good thermal stability. The device may have great potential to be operated with a wide temperature range for microwave applications.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129136676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low power CMOS 2.4-GHz monolithic integer-N synthesizer for wireless sensor 用于无线传感器的低功耗CMOS 2.4 ghz单片整数n合成器
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598915
Yan Dan Lei
{"title":"A low power CMOS 2.4-GHz monolithic integer-N synthesizer for wireless sensor","authors":"Yan Dan Lei","doi":"10.1109/RFIT.2005.1598915","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598915","url":null,"abstract":"A low-power 2.4-GHz monolithic frequency synthesizer, realized in a standard 0.18-/spl mu/M CMOS technology is reported. It consumes 8 mW from a single 1.8 V power supply, and is fully functional from 2.1-GHz to 2.4-GHz. The phase noise of the output signal is -98.7 dBc/Hz at 500 KHz offset. The die size is 0.8/spl times/0.8 mm/sup 2/.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"272 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124402723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Transistor-only low-voltage RF quadrature oscillator and frequency divider 仅晶体管低压射频正交振荡器和分频器
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598876
U. Yodprasit, C. Enz
{"title":"Transistor-only low-voltage RF quadrature oscillator and frequency divider","authors":"U. Yodprasit, C. Enz","doi":"10.1109/RFIT.2005.1598876","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598876","url":null,"abstract":"An inductorless oscillator operating in the current domain for generating radio-frequency quadrature signals is presented. The quadrature phase and gain requirements can be achieved by cascading four low-voltage regulated cascode cells in a ring fashion. To demonstrate the proposed topology, a 0.9-V oscillator working from 0.44 GHz to 3.4 GHz and having a phase noise variation ranging between -92 dBc/Hz to -84.6 dBc/Hz at 3-MHz offset was simulated for a 0.18-/spl mu/m standard digital CMOS technology. In addition to working as a quadrature oscillator, the proposed circuit can be utilized as a frequency divider without modifying the topology.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130109445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Miniaturization of planar microwave filters with irregular geometries 不规则几何平面微波滤波器的小型化
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598910
Wen Wang, Yilong Lu, J. Fu
{"title":"Miniaturization of planar microwave filters with irregular geometries","authors":"Wen Wang, Yilong Lu, J. Fu","doi":"10.1109/RFIT.2005.1598910","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598910","url":null,"abstract":"Traditional planar microwave filter designs are limited to regular shapes so that the results may not be optimal. In this paper, we present a novel design approach of planar microwave filters with irregular shapes, which leads to more freedom and possibly better designs, including considerable reduction of filter size. This approach is based on the flexible finite element method (FEM) as the 3-D field simulator and the powerful particle swarm optimization (PSO) as the optimization engine. Using this design approach, new filter structures may be invented automatically with extraordinary performance.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"101 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134093774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies 通过最先进的RF CMOS和SiGe BiCMOS技术实现无线通信
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598888
S. Chu, K. Chew, P. R. Verma, C. Ng, C. H. Cheng, N. Toledo, Y. K. Yoo, W. Loh, K. Leong, S.Q. Zhang, B. G. Oon, Y. W. Poh, T. Zhou, K. Khu, S. Lim
{"title":"Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies","authors":"S. Chu, K. Chew, P. R. Verma, C. Ng, C. H. Cheng, N. Toledo, Y. K. Yoo, W. Loh, K. Leong, S.Q. Zhang, B. G. Oon, Y. W. Poh, T. Zhou, K. Khu, S. Lim","doi":"10.1109/RFIT.2005.1598888","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598888","url":null,"abstract":"The choice of technology for today's mixed-signal/RF system-on-chip (SOC) designs has been driven by the performance enhancements and cost advantage derived from scaled CMOS technologies. This paper discusses the performance improvements of RF transistors resulting from technology downscaling. Comparisons between scaled RF CMOS and SiGe BiCMOS technologies to highlight the benefits of employing SiGe HBT devices in certain applications are made. Other technology enablements discussed include accurate, scalable models and statistical models to address the need for design flexibility and robust manufacturing. Thereafter the introduction of high Q inductors, high density capacitors and varactors as basic passive components for RF circuits are discussed. Analog requirements such as mismatch, temperature linearity and voltage linearity are also discussed.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134398317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
GaAs DGMESFET modeling using SGMESFET models GaAs DGMESFET建模使用SGMESFET模型
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598911
S. Bashirzadeh, A. Nabavi, M. Fardis
{"title":"GaAs DGMESFET modeling using SGMESFET models","authors":"S. Bashirzadeh, A. Nabavi, M. Fardis","doi":"10.1109/RFIT.2005.1598911","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598911","url":null,"abstract":"This paper presents a complete and enhanced model for dual-gate MESFETs (DGMESFETs) using a cascode connection of dual single-gate MESFETs (SGMESFET) embedded by a group of external parasitic elements. An enhanced bias and frequency-dependent SGMESFET model is employed for internal SGFET's, which accounts for charge-conservation and thermal effects. The initial values of the model parameters are obtained by measurement of DC and S-parameters. The parameters are then optimized using SAS, MATLAB and HSPICE. The model is implemented in HSPICE and its accuracy in predicting the characteristics of a NE25139 transistor is tested by DC and AC analysis.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134530116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of CMOS quadrature modulator for WLAN 802.11a application 用于WLAN 802.11a应用的CMOS正交调制器设计
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI: 10.1109/RFIT.2005.1598904
Zhiqun Li, J. Su, Zhigong Wang
{"title":"Design of CMOS quadrature modulator for WLAN 802.11a application","authors":"Zhiqun Li, J. Su, Zhigong Wang","doi":"10.1109/RFIT.2005.1598904","DOIUrl":"https://doi.org/10.1109/RFIT.2005.1598904","url":null,"abstract":"This paper describes the design of a 1-GHz quadrature modulator for 802.11a WLAN systems with TSMC 0.18-/spl mu/m CMOS technology. By using an improved double-balanced mixer combined with a double-balanced mixer, a common-mode feedback circuit and an improved transconductance amplifier, the linearity of the modulator is improved. The experimental results show the modulator achieves -5 dBm for P/sub 1 dB/, -42 dB for LO-IF isolation, and a gain of 1.2 dB. The power consumption is 49 mW with a 1.8-V power supply.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"75 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信