InGaAs/InP复合通道hemt直流和微波特性的温度依赖性

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598912

Y. Liu, H. Wang, K. Radhakrishnan, G. Ng, Y. Xiong

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引用次数: 0

摘要

采用InGaAs/InP复合通道制备了与InP晶格匹配的亚微米高电子迁移率晶体管(hemt)。研究了hemt直流和射频特性在20 ~ 100 /spl℃温度范围内的温度依赖性。研究发现，复合通道hemt的直流和微波特性对温度不敏感。特别是，在温度升高时，观察到振荡的最大频率(f/sub max/)增加。具有InGaAs/InP复合通道的InP hemt具有良好的热稳定性。该装置在微波应用的宽温度范围内具有很大的潜力。

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Temperature dependence of DC and microwave characteristics of InGaAs/InP composite channel HEMTs

Submicron high electron mobility transistors (HEMTs) lattice-matched to InP with InGaAs/InP composite channel were fabricated. Temperature dependence of DC and RF characteristics of the HEMTs were studied in the temperature range from 20 to 100 /spl deg/C. It has been found that the DC and microwave characteristics of the composite channel HEMTs are insensitive to the temperature. In particular, an increase in the maximum frequency of oscillation (f/sub max/) was observed at elevated temperature. The InP HEMTs with an InGaAs/InP composite channel shown good thermal stability. The device may have great potential to be operated with a wide temperature range for microwave applications.

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2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

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