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2013 IEEE International Conference of Electron Devices and Solid-state Circuits最新文献

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A prototype of ROIC for pyroelectric uncooled IRFPA with colume-level ADC 带柱级ADC的热释电非冷却红外焦平面天线ROIC原型
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628094
Guannan Wang, Wengao Lu, Yacong Zhang, Zhongjian Chen, L. Ji
{"title":"A prototype of ROIC for pyroelectric uncooled IRFPA with colume-level ADC","authors":"Guannan Wang, Wengao Lu, Yacong Zhang, Zhongjian Chen, L. Ji","doi":"10.1109/EDSSC.2013.6628094","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628094","url":null,"abstract":"To meet the interest in low power, low cost and small volume, uncooled Infrared Focal Plane Array(IRFPA) and Readout Integrated Circuit(ROIC) with ADC are both emphases for the third generation IRFPA. This paper presents a prototype verification of ROIC with a 14-bit column-level ADC for pyroelectric array. The architecture of ADC is not sensitive to comparator's delay. Therefore, low power and low noise design can be achieved. A prototype of ROIC with column-level ADC is implemented with a 0.5μm DPTM process. And the circuit can be expended to 384×288 array operating at 60Hz. The current of each column ADC is about 6μA.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122552247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of coupled inductor-based boost converter for ultra low power thermoelectric energy harvesting using pulse transformer with 75mV start-up voltage 启动电压为75mV的脉冲变压器超低功率热电能量收集用耦合电感升压变换器的设计
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628087
Y. Teh, P. Mok
{"title":"Design of coupled inductor-based boost converter for ultra low power thermoelectric energy harvesting using pulse transformer with 75mV start-up voltage","authors":"Y. Teh, P. Mok","doi":"10.1109/EDSSC.2013.6628087","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628087","url":null,"abstract":"This paper presents a coupled inductor-based converter capable of self-starting and has consistent conversion efficiency independent of input voltage and source resistance. Instead of using a customized high turns-ratio miniature transformer, existing compact profile pulse transformer commonly available for telecommunication circuits can be used. Simulation results with a standard CMOS 0.13-μm technology confirmed that using the proposed topology, power conversion efficiency can be improved to over 60% and is sustainable over wide input voltage range.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126284217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A low-power auto-zeroed comparator for column-paralleled 14b SAR ADCs of 384×288 IRFPA ROIC 用于384×288 IRFPA ROIC的列并联14b SAR adc的低功耗自动归零比较器
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628037
Meng Chen, Wengao Lu, Tingting Tao, Yacong Zhang, Zhongjian Chen
{"title":"A low-power auto-zeroed comparator for column-paralleled 14b SAR ADCs of 384×288 IRFPA ROIC","authors":"Meng Chen, Wengao Lu, Tingting Tao, Yacong Zhang, Zhongjian Chen","doi":"10.1109/EDSSC.2013.6628037","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628037","url":null,"abstract":"This paper presents a low power comparator with auto-zeroed technique for the readout chain of a 384×288 infrared focal plane array (IRFPA). To overcome the high power consumption of column-paralleled application, a novel inverter=based pre-amplifier is introduced. The performances of the proposed comparator are verified by a 14-bit column paralleled Successive-Approximation-Register (SAR) A/D converter which is developed in a 0.35um CMOS-based process technology. The SFDR of the A/D converter is up to 93dB at a sampling clock of 31.25 KHz with an input signal of 1.009 KHz. The overall static power of the 384 column-paralleled ADCs is less than 50mW.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122209162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reducing thermal resistance of DIP8 package based on leadframe optimization 基于引线框架优化的DIP8封装热阻降低
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628132
Diahai Zhang, Siyang Liu, Weifeng Sun
{"title":"Reducing thermal resistance of DIP8 package based on leadframe optimization","authors":"Diahai Zhang, Siyang Liu, Weifeng Sun","doi":"10.1109/EDSSC.2013.6628132","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628132","url":null,"abstract":"With the trend towards ever-powerful chip and evermore-intense heat fluxes, the thermal issues of packages are becoming increasingly important for power ICs. One of the most effective approach to improve thermal management of ICs is leadframe optimization. In this paper, we present a revised leadframe of DIP8 package which includes a bigger die pad connecting to two pins. The simulation results and experimental data both indicate the new leadframe has a much better thermal performance than the old one. Due to the lower thermal resistance and more heat conductive paths with low thermal resistance, the junction temperature has dramatically declined in the same ambient condition.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121058472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A TFT embedded cantilever (CantiFET) platform for sensor applications 用于传感器应用的TFT嵌入式悬臂(CantiFET)平台
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628191
P. Ray, V. Seena, V. Rao
{"title":"A TFT embedded cantilever (CantiFET) platform for sensor applications","authors":"P. Ray, V. Seena, V. Rao","doi":"10.1109/EDSSC.2013.6628191","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628191","url":null,"abstract":"This work focusses on the development of a ZnO based piezo-resistive polymer cantilever sensor platform. Two different approaches have been taken, one based on Al-doped ZnO transistor (TFT) embedded in a polymeric micro-cantilever and another with a ZnO nanowire embedded microcantilever. Low Young's modulus of SU-8, low process temperature and high strain sensing capability of ZnO makes this platform an attractive option for sensor applications. For both the approaches, electromechanical and mechanical characterization results are reported in this work.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116108345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Circuit model of quantum cascade lasers for simulation of influence of doping density 用于模拟掺杂密度影响的量子级联激光器电路模型
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628222
Chang Qi, Xinzhi Shi, Ye Shuangli, Jinguang Jiang
{"title":"Circuit model of quantum cascade lasers for simulation of influence of doping density","authors":"Chang Qi, Xinzhi Shi, Ye Shuangli, Jinguang Jiang","doi":"10.1109/EDSSC.2013.6628222","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628222","url":null,"abstract":"In this paper, a new equivalent circuit-level model of QCLs is introduced to overcome drawbacks of the previous models. The photon gain coefficient and injection current efficiency both depend on the injector doping density in the model. A revised three-level rate equations that permit a compact and computationally efficient implementation. The electron scattering time, relaxation time and escape time between the corresponding levels are obtained by employing a fully non-equilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. A general diode sub-circuit is adopted to model the current-voltage relationship. This new circuit-level model can be readily incorporated into a standard circuit simulation environment such as SPICE, which enables electronic integrated circuit designers to simultaneously evaluate the performance of both QCL and electronic devices.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116596378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The future of computing is mobile 未来的计算是移动的
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628034
N. Yu
{"title":"The future of computing is mobile","authors":"N. Yu","doi":"10.1109/EDSSC.2013.6628034","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628034","url":null,"abstract":"Summary form only given. Mobile wireless devices have become a necessity in everyday life, are redefining mobile possibilities for people everywhere, and are enabling significant societal changes. They have also become important product drivers for the semiconductor industry. The product market landscape has been driven by an insatiable demand for data speeds, device features, sleek appearances and increased battery life. By integrating the functionality of the CPU, the GPU, connectivity, multimedia and GPS with optimal performance and power consumption, Qualcomm's chipsets are finding applications in Smartphones as well as other Mobile Computing applications. This talk will outline the key technology elements required in the implementation of Qualcomm's chip sets. The development and cost-effective fabrication of ever more complex chip sets to meet the needs of future products requires increased innovation and integration in critical areas such as architecture, circuit design, process technology and packaging. In addition a continued focus on evolving the successful fabless model and managing cost will be discussed.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121701096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A high-efficiency hysteresis buck converter using auto selectable frequency-locked techniques 采用自动可选锁频技术的高效磁滞降压变换器
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628215
Tse-Hsu Wu, Jiann-Jong Chen, Yuh-Shyan Hwang
{"title":"A high-efficiency hysteresis buck converter using auto selectable frequency-locked techniques","authors":"Tse-Hsu Wu, Jiann-Jong Chen, Yuh-Shyan Hwang","doi":"10.1109/EDSSC.2013.6628215","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628215","url":null,"abstract":"A high-efficiency wide workload hysteresis buck converter using auto selectable frequency-locked techniques is designed with the TSMC 0.18-μm 1P6M process. The proposed buck converter yields fast-response by using hysteresis control. The workload range, power efficiency, and EMI noise problem are improved by auto-selectable frequency and frequency-locked techniques. The selected switching frequency is determined with load current. Simulation results show that this buck converter's switching frequency is locked at four frequencies for the load current between 10 and 400mA: 250k, 500k, 1M, and 2MHz. Furthermore, it achieves more than 90% power efficiency over 95% of the load range, with a peak efficiency of 96.27%.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121562674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A high-speed and reliable TFT integrated shift register 一种高速可靠的TFT集成移位寄存器
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628173
Zhijin Hu, Congwei Liao, C. Zheng, Shengdong Zhang
{"title":"A high-speed and reliable TFT integrated shift register","authors":"Zhijin Hu, Congwei Liao, C. Zheng, Shengdong Zhang","doi":"10.1109/EDSSC.2013.6628173","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628173","url":null,"abstract":"A high-speed and reliable TFT integrated shift register for high-resolution display is proposed. By inhibiting the leakage current in pull-up period and enhancing the discharge ability of driving TFT in pull-down period, the operating frequency is improved by 49%. Besides, the proposed circuit is expected to have high reliability due to the lowered gate voltages on the critical TFTs biased through capacitor coupling.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115173619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors 扩展门场效应晶体管电荷俘获提高离子传感器灵敏度
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628174
K. Ho, C. H. Chen, C. Lu, Chao-Sung Lai, Chun Chang, A. Cho, J. Chang, M. Chiang
{"title":"Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors","authors":"K. Ho, C. H. Chen, C. Lu, Chao-Sung Lai, Chun Chang, A. Cho, J. Chang, M. Chiang","doi":"10.1109/EDSSC.2013.6628174","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628174","url":null,"abstract":"Electrolyte-insulator-semiconductor (EIS) and Extended-gate Field Effect Transistor (EGFET) devices with programmable HfO2/Si3N4/SiO2 structures are demonstrated for pH detection. The proposed programmable EIS and EGFET sensors with pH sensing membranes exhibit a high pH sensitivity (larger than the ideal Nernstain response, 59.16 mV/pH at 25°C) owing to the hydrogen ions attraction by electrons trapped within the embedded trapping layer(Si3N4) after programming. When compared with the conventional devices, the programmable sensors with programming provide the possibility for the small pH fluctuation detection and can be used in future pH sensor applications owing to its high pH sensing response.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133642371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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