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2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

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Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT 1200V单片SiC MOSFET和Si IGBT短路性能的比较与分析
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803752
Jiahui Sun, Hongyi Xu, Xinke Wu, Kuang Sheng
{"title":"Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT","authors":"Jiahui Sun, Hongyi Xu, Xinke Wu, Kuang Sheng","doi":"10.1109/IFWS.2016.7803752","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803752","url":null,"abstract":"Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this work. A test bench is designed for short circuit tests of discrete MOSFETs and IGBTs. Commercially available 1200V SiC MOSFETs from Wolfspeed (C2M0080120D) and 1200V Si IGBTs from Infineon (IKW25N120H3) with similar current rating are tested. The short circuit withstand time (tcr) of the 1200V SiC MOSFET is much shorter than that of the 1200V Si IGBT. A 1-D transient finite element thermal model based on structure parameters is constructed to investigate the junction temperature curves during short circuit. According to the analysis of heat generation, short circuit capability of the SiC MOSFET is mainly restricted by high electric field at the P-N junction and high short circuit current density.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130141259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Comparative study of temperature-dependent characteristics for SiC MOSFETs SiC mosfet温度相关特性的比较研究
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803754
Furong Jiang, Kuang Sheng, Qing Guo
{"title":"Comparative study of temperature-dependent characteristics for SiC MOSFETs","authors":"Furong Jiang, Kuang Sheng, Qing Guo","doi":"10.1109/IFWS.2016.7803754","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803754","url":null,"abstract":"By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132776520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates 在4°离轴硅面衬底上生长的4H-SiC厚外延层的形貌缺陷研究
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803743
Guoguo Yan, Feng Zhang, Xingfang Liu, Lei Wang, Wanshun Zhao, Guosheng Sun, Yiping Zeng Key
{"title":"Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates","authors":"Guoguo Yan, Feng Zhang, Xingfang Liu, Lei Wang, Wanshun Zhao, Guosheng Sun, Yiping Zeng Key","doi":"10.1109/IFWS.2016.7803743","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803743","url":null,"abstract":"The crystallographic structure and origins of morphology defects observed in 4° off-axis Si-face thick 4H-SiC epitaxial layers were investigated by Nomarski microscope and Raman spectroscopy. The growth direction of these morphology defects is consistent with the step-flow direction, all of the defect include a certain core, which indicates that the defects were originated from certain cores. These cores of the morphology defects contain 3C poly-crystalline grains based on the Raman spectroscopy characterization. The head part of the defect formed during epitaxial layers growth and their formation is attributed to the foreign particles. The formation mechanisms of these obtuse morphology defects are discussed based on our model. It can be concluded that foreign particles fall down on the surface during the 4H-SiC epitaxy that disturb the normal step flow mode and lead to the 3C-SiC nucleation, which is the origination of the morphology defects.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124043626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz fT > 260 GHz的高性能超薄第四季InAlGaN势垒hemt
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803767
G. Zhu, Kai Zhang, Xinxin Yu, Y. Kong, Tangsheng Chen
{"title":"High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz","authors":"G. Zhu, Kai Zhang, Xinxin Yu, Y. Kong, Tangsheng Chen","doi":"10.1109/IFWS.2016.7803767","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803767","url":null,"abstract":"We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance R<inf>on</inf> of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high f<inf>T</inf> • L<inf>g</inf> product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at I<inf>D</inf>=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best f<inf>T</inf> performance for GaN-based HEMTs with a gate length of around 60 nm.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133004236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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