SiC mosfet温度相关特性的比较研究

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI:10.1109/IFWS.2016.7803754

Furong Jiang, Kuang Sheng, Qing Guo

{"title":"SiC mosfet温度相关特性的比较研究","authors":"Furong Jiang, Kuang Sheng, Qing Guo","doi":"10.1109/IFWS.2016.7803754","DOIUrl":null,"url":null,"abstract":"By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Comparative study of temperature-dependent characteristics for SiC MOSFETs\",\"authors\":\"Furong Jiang, Kuang Sheng, Qing Guo\",\"doi\":\"10.1109/IFWS.2016.7803754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.\",\"PeriodicalId\":331453,\"journal\":{\"name\":\"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFWS.2016.7803754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFWS.2016.7803754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

通过研究三代SiC mosfet在−160°C ~ 200°C温度下的电性能，提取了不同温度下的阈值电压和导通电阻，比较了各参数的温度依赖性和栅极偏置对导通电阻的影响。对三代样品特征参数的温度依赖性进行了比较评价。阈值电压和导通电阻的温度依赖性世代降低的原因是碳化硅与氧化物之间的界面陷阱密度世代降低。

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Comparative study of temperature-dependent characteristics for SiC MOSFETs

By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.

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来源期刊

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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