2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)最新文献

Novel vertical GaN power devices using PEALD-AlN/GaN heterostructure 新型垂直氮化镓功率器件，采用PEALD-AlN/GaN异质结构

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803765

Song Yang, Lei Lei, Kun Yu, Xuhui Wang, Ting Zhou, Xing Lu, Anping Zhang

引用次数: 2

Direct growth of GaN on sapphire with non-catalytic CVD graphene layers at high temperature 非催化CVD石墨烯层在蓝宝石上直接生长GaN的研究

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803766

Yu Xu, Zongyao Li, Lin Qi, En Zhao, D. Cai, Yumin Zhang, Y. Qiu, Guoqiang Ren, Jicai Zhang, Jianfeng Wang, B. Cao, Ke Xu

{"title":"Direct growth of GaN on sapphire with non-catalytic CVD graphene layers at high temperature","authors":"Yu Xu, Zongyao Li, Lin Qi, En Zhao, D. Cai, Yumin Zhang, Y. Qiu, Guoqiang Ren, Jicai Zhang, Jianfeng Wang, B. Cao, Ke Xu","doi":"10.1109/IFWS.2016.7803766","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803766","url":null,"abstract":"Today, heteroepitaxial GaN films on sapphire have focused on conventional two-step growth process using low temperature GaN buffer layer. Here, we show the direct growth of GaN films on sapphire by using a graphene layer at high temperature, which simplified the GaN growth process. The graphene is directly synthesized on non-catalytic sapphire substrate by chemical vapor deposition without problematic transfer processes, using C2H4 as a carbon source at the temperature of 1200 oC. The synthesized graphene has been characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM). We have compared the GaN grown on sapphire with and without graphene. The single crystal, smooth surface GaN films has been obtained on sapphire with graphene, and the nucleation of GaN films has been discussed. The GaN films illuminated high near-band-edge emission and good ultraviolet photosensor. It demonstrates that graphene is a potential, useful buffer layer for heteroepitaxy of high quality GaN films.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126630398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate Aln/Gan超晶格缓冲层厚度对硅衬底上Algan/Gan HFET电性能的影响

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803764

Zijun Chen, Liuan Li, Yue Zheng, Y. Ni, D. Zhou, Liang He, Fan Yang, Lei He, Zhisheng Wu, Baijun Zhang, Yang Liu

{"title":"Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate","authors":"Zijun Chen, Liuan Li, Yue Zheng, Y. Ni, D. Zhou, Liang He, Fan Yang, Lei He, Zhisheng Wu, Baijun Zhang, Yang Liu","doi":"10.1109/IFWS.2016.7803764","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803764","url":null,"abstract":"The influence of the total thickness (periods of AlN/GaN SLs) of AlN/GaN superlattices (SLs) buffer on the static electrical properties of AlGaN/GaN HFETs is study for the purpose of improving device's breakdown voltage (BV) and reducing its on-resistance (R<inf>ON</inf>). It is found that for top-GaN layer with a constant thickness of lμm, a proper thickness of AlN/GaN SLs buffer (such as 2.5 μm with 100 period AlN/GaN SLs) could obtain better crystal quality of top-GaN layer as well as more robust devices with more superior performance in all aspects. The most robust HFETs in this work have achieved a specific on-resistance (R<inf>ON, SP</inf>) of 0.68 mΩ-cm2 (@ L<inf>GD</inf>=4μm), a maximum on-state drain current (I<inf>D, max</inf>) of 430 mA/mm (@ L<inf>GD</inf>=4μm), an On/Off ratio of 2×108, a BV of 552V at a drain leakage current of lμA/mm (@ L<inf>GD</inf>=15μm), and a figure-of-merit (FOM=BV2/R<inf>ON, SP</inf>) of 168 MW/cm2 (@ L<inf>GD</inf>=8μm).","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116308421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A novel GaN MMICs packaging using silicon based technology 采用硅基技术的新型GaN mmic封装

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803770

Xiu-bo Liu, Yong-zhi Zhao, Shaodong Wang, Zhi-Qiang Wang

引用次数: 0

Raman analysis of phonon lifetimes in 4H-SiC and their doping dependence 4H-SiC中声子寿命的拉曼分析及其掺杂依赖性

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803747

Xuejian Xie, Yan Peng, Xianglong Yang, Xiufang Chen, Xiaobo Hu, Xiangang Xu, Peng Yu, Ruiqi Wang

{"title":"Raman analysis of phonon lifetimes in 4H-SiC and their doping dependence","authors":"Xuejian Xie, Yan Peng, Xianglong Yang, Xiufang Chen, Xiaobo Hu, Xiangang Xu, Peng Yu, Ruiqi Wang","doi":"10.1109/IFWS.2016.7803747","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803747","url":null,"abstract":"We have measured the slit width dependence of the linewidth of the first-order Raman lines in 4H-SiC at room temperature. The Raman spectra were fitted into Voigt profile. The Raman linewidth monotonously increased with the slit width, which indicated that the obtained linewidth contained the contribution of instrumental bandpass. To exclude the contribution of instrumental bandpass and get the accurate data for linewidth, a mathematical method was used to eliminate the instrumental bandpass due to the finite slit width. Then the Raman linewidth at zero-slit width was employed to calculate the phonon lifetime by energy-time uncertainty relation. Results showed that for undoped 4H-SiC, the phonon lifetime was in the sequence of E2(TA) > E2(TO) > A1(LO). In addition, the impurity content effect on phonon lifetime was discussed. Results showed that phonon lifetime was shortened with increasing impurity content. However, it was found that the phonon lifetime of E2(TA) mode was more sensitive to impurity content than that of E2(TO) mode.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134319181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Improved performance of scaled AlGaN/GaN HFETs by recessed gate 采用嵌入式栅极提高了AlGaN/GaN hfet的性能

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803769

Y. Lv, Xubo Song, Zhirong Zhang, X. Tan, Yulong Fang, Zhihong Feng

引用次数: 2

R&D of 1200V SiC MOSFETs with nitrided gate oxide and self-aligned channel technology 采用氮化栅氧化物和自对准沟道技术的1200V SiC mosfet的研发

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803753

Zhaoyang Peng, Huajun Shen, Hong Chen, Y. Bai, Yidan Tang, Yiyu Wang, Ximing Chen, Chengzhan Li, Kean Liu, Xinyu Liu

引用次数: 1

Reduction of leakage current in GaN-based high-electron mobility transistor employing carbon-doped GaN superlattice buffer layers 利用掺碳GaN超晶格缓冲层降低氮化镓基高电子迁移率晶体管的漏电流

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803757

Mingsheng Xu, Yuanhang Weng, Hong Wang

引用次数: 2

Large-area uniform epitaxial graphene on SiC by optimizing temperature field 优化温度场的SiC表面大面积均匀外延石墨烯

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803755

Fusheng Zhang, Xiufang Chen, Cancan Yu, Li Sun, Xiangang Xu, Xiaobo Hu, Tian Li, Xian Zhao, Yong Zhang, Ruiqi Wang

{"title":"Large-area uniform epitaxial graphene on SiC by optimizing temperature field","authors":"Fusheng Zhang, Xiufang Chen, Cancan Yu, Li Sun, Xiangang Xu, Xiaobo Hu, Tian Li, Xian Zhao, Yong Zhang, Ruiqi Wang","doi":"10.1109/IFWS.2016.7803755","DOIUrl":"https://doi.org/10.1109/IFWS.2016.7803755","url":null,"abstract":"Large-area uniform monolayer epitaxial graphene (EG) was prepared by the thermal decomposition of 4H-SiC in optimized temperature field. With the increase of substrate diameter, the radial temperature fluctuation also becomes more drastic. The convex and flat temperature fields with different growth system configurations were obtained by VR-PVT software. The EG surface morphology was characterized by atomic force microscopy (AFM). The graphene thickness uniformity was identified by Raman spectroscopy and scanning Kelvin probe microscopy (SKPM). After graphitization in convex temperature field with large axial and radial temperature gradients, the layer of graphene near the edge of the sample was about 1–2 layers thicker than that near the center. At the same time, many messy small steps splitting from big steps reduced the uniformity. By optimizing the temperature filed distribution the ratio of monolayer epitaxial graphene coverage increased from 65% to 94%. Furthermore, growth temperature dependence of the EG layer number and uniformity was investigated. The statistic results indicated that 1700°C was the most suitable growth temperature fabricating high quality and uniformity of EG.","PeriodicalId":331453,"journal":{"name":"2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125527703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on AIN-based hybrid bulk acoustic wave resonator with low temperature coefficient of frequency 基于ai的低频率温度系数混合体声波谐振器的研究

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803773

Shuai Yang, Yun Zhang, Lili Sun, Lian Zhang, Zhe Cheng, Junxi Wang, Jinmin Li

引用次数: 2