Reduction of leakage current in GaN-based high-electron mobility transistor employing carbon-doped GaN superlattice buffer layers

Abstract

The leakage current of buffer layer deteriorates the electronic properties of GaN-based high-electron mobility transistor (HEMT). We proposed a GaN:C/GaN superlattice to improve the resistivity of buffer layer without reducing its crystallization. The leakage current of HEMT with GaN:C/GaN superlattices reduces one order of magnitude compared to the conventional HEMT with carbon-doped buffer.