2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

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2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - 最新文献

Novel vertical GaN power devices using PEALD-AlN/GaN heterostructure

Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803765 Song Yang, Lei Lei, Kun Yu, Xuhui Wang, Ting Zhou, Xing Lu, Anping Zhang

Direct growth of GaN on sapphire with non-catalytic CVD graphene layers at high temperature

Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803766 Yu Xu, Zongyao Li, Lin Qi, En Zhao, D. Cai, Yumin Zhang, Y. Qiu, Guoqiang Ren, Jicai Zhang, Jianfeng Wang, B. Cao, Ke Xu

Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate

Pub Date : 2016-11-01 DOI: 10.1109/IFWS.2016.7803764 Zijun Chen, Liuan Li, Yue Zheng, Y. Ni, D. Zhou, Liang He, Fan Yang, Lei He, Zhisheng Wu, Baijun Zhang, Yang Liu

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