Comparative study of temperature-dependent characteristics for SiC MOSFETs

Abstract

By studying the electrical performances of SiC MOSFETs for three generations at temperatures from −160°C to 200°C, threshold voltages and on-resistances are extracted at different temperatures, and the temperature dependency of each parameter and the gate bias influences on on-resistances are compared. The comparative evaluation of temperature-dependence of characteristic parameters for three-generation samples is studied. The reason for generational decreased temperature dependency of threshold voltage and on-resistance is that the interface trap density between silicon carbide and oxide is generationally decreased.