发布求助
文献互助 智能选刊 最新文献

2015 International Semiconductor Conference (CAS)最新文献

筛选
英文 中文
New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode 采用28nm FDSOI技术的新型BIMOS晶体管:在4栅极JFET模式下工作
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355193
P. Galy, S. Athanasiou, S. Cristoloveanu
{"title":"New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode","authors":"P. Galy, S. Athanasiou, S. Cristoloveanu","doi":"10.1109/SMICND.2015.7355193","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355193","url":null,"abstract":"In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor 4H-SiC半导体上常通mesfet电压比较器集成电路的设计
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355198
V. Banu, P. Godignon, J. Millán
{"title":"Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor","authors":"V. Banu, P. Godignon, J. Millán","doi":"10.1109/SMICND.2015.7355198","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355198","url":null,"abstract":"This paper continues our previous works about the integrated circuits development on the 4H-SiC semiconductor, based on finger gate MESFETs. It describes a comparator designed exclusively with normally-on MESFETs and epitaxial resistors. For this novel circuit design we have used the SPICE models previously extracted from devices further used for fabrication of functional complex analog and digital circuitry (thermally compensated analog voltage reference, basic logic gate and various flip-flops).The schematic is presented in detail from the block schematic to the transistor level. The comparator waveforms and the time delays are presented for zero, positive and negative reference levels both at RT and 250°C. The Comparator circuit was successfully simulated using sinusoidal and triangular signals at 100 kHz and 200 kHz. However, the presented waveforms are only for 100 kHz sinusoidal signal.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132530133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Synthesis and characterization of La10Si6O27 La10Si6O27的合成与表征
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355164
E. Voinea, N. Cioateră, A. Barbu, A. Simioneascu, C. Spînu
{"title":"Synthesis and characterization of La10Si6O27","authors":"E. Voinea, N. Cioateră, A. Barbu, A. Simioneascu, C. Spînu","doi":"10.1109/SMICND.2015.7355164","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355164","url":null,"abstract":"Oxide ion conductors are an important group of materials which have been increasingly studied due to their applications in many devices of high technological interest, especially in Solid Oxide Fuel Cells (SOFC) which are efficient and environmentally friendly energy convertors. In this work we study an inexpensive, suitable and recyclable material with apatite structure. Lanthanum silicate with apatite type structure, La10Si6O27,was synthesized by two pathways: sol-gel and co-precipitation. The as-obtained powders were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. Samples with different morphologies consisting of a mixture of phases were obtained.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"143 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133088139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long term ageing changes in structure and morphology of nanocrystalline ZnxCd1−xSe thin films ZnxCd1−xSe纳米晶薄膜的结构和形貌的长期老化变化
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355163
I. Bineva, T. Hristova-Vassileva, B. Pejova, D. Nesheva, Z. Levi, Z. Aneva
{"title":"Long term ageing changes in structure and morphology of nanocrystalline ZnxCd1−xSe thin films","authors":"I. Bineva, T. Hristova-Vassileva, B. Pejova, D. Nesheva, Z. Levi, Z. Aneva","doi":"10.1109/SMICND.2015.7355163","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355163","url":null,"abstract":"Long term morphological and structural changes of ZnxCd1-xSe (x=0.4, 0.6 and 0.8) thin films, obtained by solid state alloying of consecutively deposited submonolayers of ZnSe and CdSe, were investigated by means of Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The XRD investigations show typical solid solution patterns without any decomposition. A relaxation of the lattice is observed through the years, showing tendency towards thermodynamic equilibrium. A. non-uniform strain is observed for x= 0.4 and 0.8, which is proven by the AFM measurements to be due to structural defects. 2D fast Fourrier transform patterns are derived from the AFM images and grain structure evolution and various morphological changes occurring in the films with time are observed and discussed.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124473932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of dielectrophoretic force acting on biological cells and on micro- and nanoparticles 作用于生物细胞和微、纳米粒子上的介电泳力的计算
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355212
T. Sandu
{"title":"Calculation of dielectrophoretic force acting on biological cells and on micro- and nanoparticles","authors":"T. Sandu","doi":"10.1109/SMICND.2015.7355212","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355212","url":null,"abstract":"It is presented a theory that permits to calculate the ac dielectrophoretic force acting on biological cells and other micro- and nanoparticles of arbitrary shape. The theory includes intrinsically all the higher-order terms of dielectrophoretic force without additional computation costs. For sufficiently small electric field gradients the dielectrophoretic force is weighted by the induced cell dipole moment that depends on both shape and electric parameters of the cell. Examples of red blood cells are given.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124916001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High voltage freewheeling diodes in an extended capability LED driving application 在扩展能力的LED驱动应用的高压自由转动二极管
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355199
G. Pristavu, A. Vasilica, V. Anghel, R. Pascu, G. Brezeanu, F. Draghici
{"title":"High voltage freewheeling diodes in an extended capability LED driving application","authors":"G. Pristavu, A. Vasilica, V. Anghel, R. Pascu, G. Brezeanu, F. Draghici","doi":"10.1109/SMICND.2015.7355199","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355199","url":null,"abstract":"The use of high power freewheeling diodes - Silicon Carbide Schottky and PiN rectifiers - in buck converter-based LED drivers is investigated. Applications biasing up to 60 LEDs at input voltages reaching 250V are developed for both diode types. Despite different switching behavior and dissipated power between freewheeling devices, experimental results show a significant converter driving capability extension and an efficiency of over 95% in all cases.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125767016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A variable gain amplifier with variable input impedance and auto-zero feedback for spin torque oscillators 一种用于自旋转矩振荡器的可变输入阻抗和自动归零反馈的可变增益放大器
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355196
M. Kreissig, Alexander Richter, F. Ellinger
{"title":"A variable gain amplifier with variable input impedance and auto-zero feedback for spin torque oscillators","authors":"M. Kreissig, Alexander Richter, F. Ellinger","doi":"10.1109/SMICND.2015.7355196","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355196","url":null,"abstract":"This work presents a highly adaptive circuit for amplifying a signal of a spin torque oscillator (STO). For achieving power matching with respect to the STO's variable output resistance, the input impedance of the amplifier can be tuned in the range of 50 Ω to more than 500 Ω. Multiple amplifier stages are deployed leading to accumulated gain of >60 dB at 1 GHz. The -3 dB bandwidth of 1.5 GHz makes this amplifier suitable for vortex STO. A fully integrated and adjustable auto-zero feedback for compensating the DC-offset has been implemented in order to convert the single ended signal into a differential one. The circuit was realized in a 180nm BiCMOS process and includes an I2C-slave interface to adjust on-chip currents and control signal switches.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design optimization of MEMS piezoelectric energy cantilever device for environment vibrations harvesting 用于环境振动采集的MEMS压电能量悬臂装置的设计优化
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355228
G. Muscalu, Adrian Anghelescu, B. Firtat
{"title":"Design optimization of MEMS piezoelectric energy cantilever device for environment vibrations harvesting","authors":"G. Muscalu, Adrian Anghelescu, B. Firtat","doi":"10.1109/SMICND.2015.7355228","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355228","url":null,"abstract":"Piezoelectric MEMS cantilevers have been under strong demand in the last years. Most of them made in the thin film technology and in different configurations like unimorphs, bimorphs or multimorphs are targeted for sensor and actuator applications. Our paper is about the design optimization of piezoelectric harvesting cantilevers able to convert mechanical vibrations from the surrounding environment to electrical energy via direct piezoelectric effect. Different unimorph piezoelectric harvester geometries and materials are proposed, all employing flexure mode. All these models are simulated using CoventorWare software. A double array of cantilevers (2 × 10) is used in order to obtain a greater output power magnitude, up to ~1.46 μW.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131590971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated cooling control system through Peltier effect and high efficiency control using a DC-DC Buck converter 自动冷却控制系统通过珀尔帖效应和高效率控制采用DC-DC降压变换器
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355233
S. Mihalache, Irina Flamaropol, Florin-Silviu Dumitru, L. Dobrescu, D. Dobrescu
{"title":"Automated cooling control system through Peltier effect and high efficiency control using a DC-DC Buck converter","authors":"S. Mihalache, Irina Flamaropol, Florin-Silviu Dumitru, L. Dobrescu, D. Dobrescu","doi":"10.1109/SMICND.2015.7355233","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355233","url":null,"abstract":"This paper presents an alternative solution to cooling applications by means of the Peltier effect, advantageous because there are no moving parts or fluids, leading to safer, reliable, and eco-friendly operation. Driven by DC power, our efficient system uses a Buck converter with custom designed blocks to ensure high performance.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122257543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Evidence and effects of higher order modes on the response of guided wave radar-based level sensors 高阶模态对基于导波雷达的液位传感器响应的证据和影响
2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI: 10.1109/SMICND.2015.7355186
C. Cobianu, I. Georgescu, Michael Hughes, Stuart Heath, F. Haran
{"title":"Evidence and effects of higher order modes on the response of guided wave radar-based level sensors","authors":"C. Cobianu, I. Georgescu, Michael Hughes, Stuart Heath, F. Haran","doi":"10.1109/SMICND.2015.7355186","DOIUrl":"https://doi.org/10.1109/SMICND.2015.7355186","url":null,"abstract":"In this work we investigate the effects of the pulse duration and geometry of the tank on the time response of the guided wave radar (GWR) level transmitter. By 1COMSOL® modelling and simulation we show that for shorter pulses below 0.5ns and larger diameters of the nozzle (above 150 mm) parasitic higher order modes, like TE11 are generated, affecting the accuracy of level measurement. This TE11 mode interferes with TEM mode creating standing waves evidenced as “ringing” in the time domain response. The experimental results shown here for pulse duration of 0.27 ns and a diameter of the nozzle of 152 mm are in very good agreement with the model.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116451937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信