采用28nm FDSOI技术的新型BIMOS晶体管:在4栅极JFET模式下工作

2015 International Semiconductor Conference (CAS) Pub Date : 2015-10-01 DOI:10.1109/SMICND.2015.7355193

P. Galy, S. Athanasiou, S. Cristoloveanu

{"title":"采用28nm FDSOI技术的新型BIMOS晶体管:在4栅极JFET模式下工作","authors":"P. Galy, S. Athanasiou, S. Cristoloveanu","doi":"10.1109/SMICND.2015.7355193","DOIUrl":null,"url":null,"abstract":"In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode\",\"authors\":\"P. Galy, S. Athanasiou, S. Cristoloveanu\",\"doi\":\"10.1109/SMICND.2015.7355193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"172 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了一种采用28nm高k金属栅极FDSOI UTBB技术制造的新型BIMOS晶体管。该器件具有高度的灵活性和可重构性，因为它可以在MOS，双极，混合和4门模式下工作。我们研究了类似jfet操作的偏置条件，并在超薄硅膜结构中显示出良好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode

In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.

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2015 International Semiconductor Conference (CAS)

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