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Методы радиационного формирования кристаллов CaSi2 в процессе эпитаксиального роста CaF2 на подложке Si(111)
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-110
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引用次数: 0
Модификация поверхности и распыление кремния при бомбардировке ионами С60 离子c60轰击表面修改和硅雾化
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-42
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引用次数: 0
Влияние параметров ориентации зерен на механизм образования множественных двойников и генерацию дислокаций 谷物定向参数对多个二重身产生机制和位置产生的影响
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-38
{"title":"Влияние параметров ориентации зерен на механизм образования множественных двойников и генерацию дислокаций","authors":"","doi":"10.34077/silicon2022-38","DOIUrl":"https://doi.org/10.34077/silicon2022-38","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73115716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Полупроводниковые и полуметаллические силициды кальция на кремнии для оптоэлектроники и солнечной энергетики 光电和太阳能半导体和半金属硅酸钙硅酸盐
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-49
{"title":"Полупроводниковые и полуметаллические силициды кальция на кремнии для оптоэлектроники и солнечной энергетики","authors":"","doi":"10.34077/silicon2022-49","DOIUrl":"https://doi.org/10.34077/silicon2022-49","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"146 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73984413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ферромагнетизм самоупорядоченных наностержней α-FeSi2 на вицинальной поверхности Si(111)-3° от 2К до 300 К 铁磁性самоупорядоченнаностержнα-вицинальн表面FeSi2 Si (111) 2k - 3°到300
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-117
{"title":"Ферромагнетизм самоупорядоченных наностержней α-FeSi2 на вицинальной поверхности Si(111)-3° от 2К до 300 К","authors":"","doi":"10.34077/silicon2022-117","DOIUrl":"https://doi.org/10.34077/silicon2022-117","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80508575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Атомно-слоевое осаждение (ALD) и атомно-слоевое травление (ALE) для кремниевой наноэлектроники с проектными нормами 45 нм и менее 硅纳米电子学的原子层沉积(ALD)和原子层腐蚀(ALE)
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-72
{"title":"Атомно-слоевое осаждение (ALD) и атомно-слоевое травление (ALE) для кремниевой наноэлектроники с проектными нормами 45 нм и менее","authors":"","doi":"10.34077/silicon2022-72","DOIUrl":"https://doi.org/10.34077/silicon2022-72","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"06 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85975274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Транспорт заряда и природа ловушек в low-k диэлектриках с упорядоченной мезопористой структурой и органическими мостиками между атомами кремния 电荷运输和低k介质陷阱的性质，中间孔结构有序，硅原子之间的有机桥
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-48
{"title":"Транспорт заряда и природа ловушек в low-k диэлектриках с упорядоченной мезопористой структурой и органическими мостиками между атомами кремния","authors":"","doi":"10.34077/silicon2022-48","DOIUrl":"https://doi.org/10.34077/silicon2022-48","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86039304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Интеграция белка Dps с массивом нанонитей кремния по данным микроскопических и рентгеноспектральных исследований 根据显微镜和x射线光谱研究，Dps蛋白与硅nanites集成
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-74
{"title":"Интеграция белка Dps с массивом нанонитей кремния по данным микроскопических и рентгеноспектральных исследований","authors":"","doi":"10.34077/silicon2022-74","DOIUrl":"https://doi.org/10.34077/silicon2022-74","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90578500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Карбид кремния (SiC). Применение в российской силовой электроники. Настоящее, будущее сквозного процесса производства в России. 碳化硅(SiC)俄罗斯电力电子的应用。现在，未来的整个生产过程在俄罗斯。
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-84
{"title":"Карбид кремния (SiC). Применение в российской силовой электроники. Настоящее, будущее сквозного процесса производства в России.","authors":"","doi":"10.34077/silicon2022-84","DOIUrl":"https://doi.org/10.34077/silicon2022-84","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"90 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86719442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Влияние термообработок на температурную зависимость дислокационной люминесценции в ионно-имплантированном кремнии 热加工对离子植入硅中位发光温度关系的影响
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-66
{"title":"Влияние термообработок на температурную зависимость дислокационной люминесценции в ионно-имплантированном кремнии","authors":"","doi":"10.34077/silicon2022-66","DOIUrl":"https://doi.org/10.34077/silicon2022-66","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85692159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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