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Методы радиационного формирования кристаллов CaSi2 в процессе эпитаксиального роста CaF2 на подложке Si(111)
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-110
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引用次数: 0
Модификация поверхности и распыление кремния при бомбардировке ионами С60 离子c60轰击表面修改和硅雾化
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-42
{"title":"Модификация поверхности и распыление кремния при бомбардировке ионами С60","authors":"","doi":"10.34077/silicon2022-42","DOIUrl":"https://doi.org/10.34077/silicon2022-42","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73085503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Влияние параметров ориентации зерен на механизм образования множественных двойников и генерацию дислокаций 谷物定向参数对多个二重身产生机制和位置产生的影响
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-38
{"title":"Влияние параметров ориентации зерен на механизм образования множественных двойников и генерацию дислокаций","authors":"","doi":"10.34077/silicon2022-38","DOIUrl":"https://doi.org/10.34077/silicon2022-38","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73115716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Полупроводниковые и полуметаллические силициды кальция на кремнии для оптоэлектроники и солнечной энергетики 光电和太阳能半导体和半金属硅酸钙硅酸盐
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-49
{"title":"Полупроводниковые и полуметаллические силициды кальция на кремнии для оптоэлектроники и солнечной энергетики","authors":"","doi":"10.34077/silicon2022-49","DOIUrl":"https://doi.org/10.34077/silicon2022-49","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"146 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73984413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ферромагнетизм самоупорядоченных наностержней α-FeSi2 на вицинальной поверхности Si(111)-3° от 2К до 300 К 铁磁性самоупорядоченнаностержнα-вицинальн表面FeSi2 Si (111) 2k - 3°到300
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-117
{"title":"Ферромагнетизм самоупорядоченных наностержней α-FeSi2 на вицинальной поверхности Si(111)-3° от 2К до 300 К","authors":"","doi":"10.34077/silicon2022-117","DOIUrl":"https://doi.org/10.34077/silicon2022-117","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80508575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Атомно-слоевое осаждение (ALD) и атомно-слоевое травление (ALE) для кремниевой наноэлектроники с проектными нормами 45 нм и менее 硅纳米电子学的原子层沉积(ALD)和原子层腐蚀(ALE)
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-72
{"title":"Атомно-слоевое осаждение (ALD) и атомно-слоевое травление (ALE) для кремниевой наноэлектроники с проектными нормами 45 нм и менее","authors":"","doi":"10.34077/silicon2022-72","DOIUrl":"https://doi.org/10.34077/silicon2022-72","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"06 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85975274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Исследование возможности очистки кремния металлургическими методами 冶金加工硅能力研究
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-24
Таня Попович, Л В Вишневская, С М Иванищук, И Г Чечина
{"title":"Исследование возможности очистки кремния металлургическими методами","authors":"Таня Попович, Л В Вишневская, С М Иванищук, И Г Чечина","doi":"10.34077/silicon2022-24","DOIUrl":"https://doi.org/10.34077/silicon2022-24","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73598885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Внедрение одиночных атомов фосфора в кремний через маску из монослоя галогена 单个磷原子通过单层卤素引入硅
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-71
{"title":"Внедрение одиночных атомов фосфора в кремний через маску из монослоя галогена","authors":"","doi":"10.34077/silicon2022-71","DOIUrl":"https://doi.org/10.34077/silicon2022-71","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"120 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77976479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Зонная структура гетероперехода SiIn2O3:Er Si - In2O3异质异质结构:
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-46
{"title":"Зонная структура гетероперехода SiIn2O3:Er","authors":"","doi":"10.34077/silicon2022-46","DOIUrl":"https://doi.org/10.34077/silicon2022-46","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79662368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Карбид кремния (SiC). Применение в российской силовой электроники. Настоящее, будущее сквозного процесса производства в России. 碳化硅(SiC)俄罗斯电力电子的应用。现在，未来的整个生产过程在俄罗斯。
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-84
{"title":"Карбид кремния (SiC). Применение в российской силовой электроники. Настоящее, будущее сквозного процесса производства в России.","authors":"","doi":"10.34077/silicon2022-84","DOIUrl":"https://doi.org/10.34077/silicon2022-84","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"90 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86719442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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