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ИССЛЕДОВАНИЕ ВЫДЕЛЕНИЯ ВЫСОКОЧИСТЫХ СТЕРОЛОВ НА БАРАБАННОМ КРИСТАЛЛИЗАТОРЕ 鼓结晶器高纯类固醇分泌研究
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-10-12 DOI: 10.25699/tohbipp.2022.92.53.010
И.Е. Сенников, Дмитрий Евгеньевич Суханов
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引用次数: 0
ИССЛЕДОВАНИЕ ВЛИЯНИЯ МИНДАЛЯ СЛАДКОГО НА ФОРМИРОВАНИЕ КАЧЕСТВЕННЫХ ХАРАКТЕРИСТИК ИРИСА 研究糖杏仁对鸢尾花质量特征的影响
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-10-12 DOI: 10.25699/tohbipp.2022.38.33.047
В.А. Тюрина, Александра Сергеевна Захарова, В.Г. Курцева
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引用次数: 0
Диффузия и взаимодействие атомов In и As, имплантированных в термически выращенные на кремнии пленки SiO2 SiO2胶片上热生长中的原子和As的扩散和相互作用
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-122
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引用次数: 0
Рост эпитаксиальных слоев Si и Ge на диэлектрических подложках. Si和Ge在电介质底座上的外延层增长。
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-43
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引用次数: 0
Механизмы влияния слоев LT-GaAs на систему пронизывающих дислокаций в гетероструктурах GaAs/Si(001)
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-32
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引用次数: 0
Генерация и детектирование спиновых токов в структурах ферромагнетик/кремний 铁磁/硅结构中的自旋电流生成和检索
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-65
{"title":"Генерация и детектирование спиновых токов в структурах ферромагнетик/кремний","authors":"","doi":"10.34077/silicon2022-65","DOIUrl":"https://doi.org/10.34077/silicon2022-65","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"38 12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82824093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature switching of conductance in SiO2 layer with InSb nanocrystals InSb纳米晶在SiO2层中的低温电导开关
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-54
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引用次数: 0
Примесный ферромагнетизм Si:P вблизи фазового перехода изолятор-металл Si的杂交铁氧体:靠近绝缘体-金属过渡的P
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-40
Андрей Георгиевич Забродский, Э. Лахдеранта, П. В. Семенихин
{"title":"Примесный ферромагнетизм Si:P вблизи фазового перехода изолятор-металл","authors":"Андрей Георгиевич Забродский, Э. Лахдеранта, П. В. Семенихин","doi":"10.34077/silicon2022-40","DOIUrl":"https://doi.org/10.34077/silicon2022-40","url":null,"abstract":"Обнаружены и исследованы ферромагннитные свойства Si:P в области концентрационного фазового перехода изолятор–металл при гелиевых температурах. Для определения спиновой составляющей намагниченности из измеренных СКВИДом значений полной намагниченности образцов вычитался линейный по полю диамагнитный вклад. Спиновая намагниченность обладает характерными для ферромагнетика сильной нелинейностью с насыщением в полях порядка нескольких кЭ, а также петлей гистерезиса. Способность к намагничиванию резко убывает при смещении вглубь изоляторной стороны фазового перехода. Она, однако, сильно возрастает при близкой к половинной степени компенсации Si:P акцепторными примесями. Результаты свидетельствуют о том, что в Si:P в области перехода изолятор-металл при низких температурах триплетное состояние для части пар обменно-связанных спинов (ферромагнитная фаза) оказывается энергетически более выгодным чем синглетное (антиферромагнитная фаза), чему, в значительной степени, способствует умеренная компенсация.","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89548891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Электрофизические характеристики p-i-n-фотодиодов, облученных γ-квантами 60Со
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-106
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引用次数: 0
Использование слоя кубического карбида кремния (3C-SiC) в процессе роста соединений (Ga, Al)N на подложке кремния методом МОГФЭ 使用立方碳化硅层(3C-SiC)在化合物生长过程中(Ga, Al)N
Sel''skokhoziaistvennye mashiny i tekhnologii Pub Date : 2022-09-02 DOI: 10.34077/silicon2022-26
{"title":"Использование слоя кубического карбида кремния (3C-SiC) в процессе роста соединений (Ga, Al)N на подложке кремния методом МОГФЭ","authors":"","doi":"10.34077/silicon2022-26","DOIUrl":"https://doi.org/10.34077/silicon2022-26","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78354691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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