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Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density 低电流密度下抛物量子阱对InGaN/GaN基微型led内部量子效率的影响
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894798
R. Gurjar, C. P. Singh, A. Meena, K. Ghosh
{"title":"Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density","authors":"R. Gurjar, C. P. Singh, A. Meena, K. Ghosh","doi":"10.1109/NUSOD54938.2022.9894798","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894798","url":null,"abstract":"The quantum cascade stark effect (QCSE) in rectangular shaped quantum well (QW) poses a hindrance to increase the internal quantum efficiency (IQE) of nitride based LEDs. To circumvent the said problem for micro-LEDs operating at low current density, a parabolic QW structure has been proposed which is found to be useful to alleviate the QCSE and to increase the IQE. To emit around 500 nm, it has been observed that use of parabolic QW(instead of rectangular QWs) in the active region of micro-LED results in 10% less applied voltage to reach 0.1 A/cm2 current at which ~50% more IQE is obtained. Further a variation in the number of parabolic QWs indicates that a two quantum well structure in the active region of the designed micro-LED will result in maximum IQE at a low current density of 0.1 A/cm2. However, the performance of the parabolic QWs are inferior to the rectangular QWs at high current densities where the conventional LED works.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131147315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulations of nonparaxial solitons and their interaction dynamics in coupled Helmholtz systems 耦合亥姆霍兹系统中非副轴孤子的数值模拟及其相互作用动力学
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894758
Tamilselvan Kamatchi, Govindarajan Aijunan
{"title":"Numerical simulations of nonparaxial solitons and their interaction dynamics in coupled Helmholtz systems","authors":"Tamilselvan Kamatchi, Govindarajan Aijunan","doi":"10.1109/NUSOD54938.2022.9894758","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894758","url":null,"abstract":"The role of nonparaxiality provides a fertile ground for fabricating miniaturized nanoscale devices. In this work, we examine the existence of nonparaxial solitons in a dimensionless coupled nonlinear Helmholtz system, allowing the propagation of ultra-broad nonparaxial pulses in a birefringent optical waveguide. We analytically obtain a bright soltion solution by using standard Hirota’s bilinearization method. Subsequently, we numerically investigate the scattering dynamics of two bright solitary waves by considering the obtained solution as the seed solution.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126674748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of random alloy fluctuations on the electronic properties of axial InxGa1–xN/GaN nanowire heterostructures 合金随机波动对轴向InxGa1-xN /GaN纳米线异质结构电子性能的影响
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894777
O. Marquardt, T. Koprucki, M. O’Donovan, S. Schulz, O. Brandt
{"title":"Influence of random alloy fluctuations on the electronic properties of axial InxGa1–xN/GaN nanowire heterostructures","authors":"O. Marquardt, T. Koprucki, M. O’Donovan, S. Schulz, O. Brandt","doi":"10.1109/NUSOD54938.2022.9894777","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894777","url":null,"abstract":"Compound semiconductor heterostructures such as quantum dots, nanowires, or thin films, are commonly subject to randomly fluctuating alloy compositions if they contain ternary and quaternary alloys. These effects are obviously of an atomistic nature and thus rarely considered in heterostructure designs that require simulations on a continuum level for theory-guided design or interpretation of observations. In the following, we present a systematic approach to the treatment of alloy fluctuations in (In,Ga)N/GaN thin films and axial nanowire heterostructures. We demonstrate to what extent random alloy fluctuations can be treated in a continuum picture and discuss the impact of alloy fluctuations on the electronic properties of planar and nano wire-based (In,Ga)N/GaN heterostructures.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126983222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of reflectivity and resistance properties of p-type distributed Bragg reflectors with composition graded interfaces 具有组成梯度界面的p型分布Bragg反射器的反射率和电阻特性研究
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894776
Liwen Cheng, Da Yang, Shun Yao
{"title":"Study of reflectivity and resistance properties of p-type distributed Bragg reflectors with composition graded interfaces","authors":"Liwen Cheng, Da Yang, Shun Yao","doi":"10.1109/NUSOD54938.2022.9894776","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894776","url":null,"abstract":"In this work, the reflectivity and series resistance of the p-type distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) under the different thickness of composition graded interface layers, Al composition of the high Al composition layers, Al composition of the low Al composition layers, and the number of DBR periods are simulated and investigated, respectively. To obtain the optimal parameters for the p-type DBRs, the Min-Max normalization method is applied for the comprehensive analysis and comparison of the reflectivity and series resistance. The results show that the series resistance can be effectively reduced by selecting the appropriate parameters of the p-type DBRs.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122341256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliable prediction of the singlet-triplet gap in TADF molecules with GW/BSE approach 用GW/BSE方法可靠地预测TADF分子的单线态-三重态间隙
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894764
D. Chaudhuri, C. H. Patterson
{"title":"Reliable prediction of the singlet-triplet gap in TADF molecules with GW/BSE approach","authors":"D. Chaudhuri, C. H. Patterson","doi":"10.1109/NUSOD54938.2022.9894764","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894764","url":null,"abstract":"Organic light emitting diode (OLED) molecules that exhibit thermally activated delayed fluorescence (TADF) have emerged as a promising technology for various lighting and display applications. Such systems depend on low singlet-triplet gaps of the order of kT to allow reverse inter-system crossing. Here, we demonstrate the capability of a GW/BSE method to predict excitation energies and singlet-triplet gaps. We compare the results with time-dependent density functional theory of two organic molecules. The BSE results (in comparison to TDDF-TTDA) show absolute minimum deviations of 0.04 eV in the first absorption peak and 0.04 eV in the singlet-triplet splitting for the PhCz molecule and serve as a reliable tool to explore the design concepts in TADF molecules with small singlet-triplet splittings.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123878562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced optoelectronic properties of UV-C light-emitting diode UV-C发光二极管光电性能的增强
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894804
Saad Rasheed, Muhammad Usman
{"title":"Enhanced optoelectronic properties of UV-C light-emitting diode","authors":"Saad Rasheed, Muhammad Usman","doi":"10.1109/NUSOD54938.2022.9894804","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894804","url":null,"abstract":"We numerically analyzed proposed structure named as LED S2 in comparison to reference structure LED S1. In LED S2 we introduced undoped AlGaN and p-AlGaN layers between the electron blocking layer (EBL) and the p-GaN (hole injecting layer). The simulation finding shows proposed structure (LED S2) provide a better strategy for lowering electron overflow and improving hole strength. This enhancement in the properties is the result of maximum recombination of carriers (electron/hole) in the active region. Furthermore, the mismatch between the epi-layers on the p-side reduces, allowing holes to easily move towards the active region.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115684393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Guided-mode resonance filter using Spacetime Periodic Structure 利用时空周期结构的可调谐导模谐振滤波器
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894771
Y. Khorrami, D. Fathi, Nasrin Razmjooei, R. Rumpf
{"title":"Tunable Guided-mode resonance filter using Spacetime Periodic Structure","authors":"Y. Khorrami, D. Fathi, Nasrin Razmjooei, R. Rumpf","doi":"10.1109/NUSOD54938.2022.9894771","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894771","url":null,"abstract":"We present a tunable planar guided-mode resonance (GMR) filter using time-varying permittivity along grating nanobars. Results show that the effective medium concept in the temporal state is exactly the same as the spatial state. Furthermore, the structure has spatial periodicity to save the resonance peak of the passive GMR in addition to the temporal periodicity that is used to tune the resonance location around the static reflection and transmission resonance peak as blueshift or redshift. Moreover, the proposed 1D+1 spacetime GMR filter has a broader bandwidth (BW) for blueshift in comparison to the redshift of the peak resonance.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114604465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon 硅基注入锁定外延量子点激光器的相对强度噪声
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894812
Qi Chu, Shiyuan Zhao, F. Grillot, Jiawei Wang, Feng He, Mingyu Zhang, Xiaochuan Xu, Yong Yao, J. Duan
{"title":"Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon","authors":"Qi Chu, Shiyuan Zhao, F. Grillot, Jiawei Wang, Feng He, Mingyu Zhang, Xiaochuan Xu, Yong Yao, J. Duan","doi":"10.1109/NUSOD54938.2022.9894812","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894812","url":null,"abstract":"This work investigates the relative intensity noise (RIN) characteristics of quantum dot (QD) lasers epitaxially grown on silicon subject to the optical injection. The effect of threading dislocation (TD), which acts as nonradiative recombination centers in the Shockley-Read-Hall (SRH) process, is considered in the rate equation model. The results reveal that the RIN is enhanced by decreasing the nonradiative recombination lifetime. It is shown that this high RIN characteristics is suppressed by the optical injection. In the stable injection-locked area, the RIN is reduced down to - 168 dB/Hz by adjusting the injection ratio and frequency detuning. This work provides an effective method for designing low RIN lasers for photonics integrated circuits (PICs) on silicon.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125473528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full-Vectorial Meshfree Finite Cloud Mode Solver for Fused Fiber-Optic Couplers 熔丝光纤耦合器的全矢量无网格有限云模式求解器
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894832
Xiaoer Wu, Jinbiao Xiao
{"title":"Full-Vectorial Meshfree Finite Cloud Mode Solver for Fused Fiber-Optic Couplers","authors":"Xiaoer Wu, Jinbiao Xiao","doi":"10.1109/NUSOD54938.2022.9894832","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894832","url":null,"abstract":"A novel full-vectorial meshfree finite cloud mode solver is proposed for analysis of fused optic-fiber couplers, in which the curvilinear coordinate mapping technique is used to map a cloud with curved interface onto a unit square. Numerical results are compared with prior analysis using the finite difference method, showing the validity and utility of the proposed method.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"66 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128355484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions 具有ii型超晶格和隧道结的中红外vcsel中的载流子输运模型
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894782
Valerio Torrelli, J. G. Montoya, A. Tibaldi, P. Debernardi, Andrea Simaz, M. Belkin, M. Goano, F. Bertazzi
{"title":"Modeling carrier transport in mid-infrared VCSELs with type-II superlattices and tunnel junctions","authors":"Valerio Torrelli, J. G. Montoya, A. Tibaldi, P. Debernardi, Andrea Simaz, M. Belkin, M. Goano, F. Bertazzi","doi":"10.1109/NUSOD54938.2022.9894782","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894782","url":null,"abstract":"Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 ÷ 4 μm spectral region. A type-II superlattice active region is used for carrier injection and confinement, while a buried tunnel junction defines a current aperture, decreasing the series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling challenges beyond semiclassical approaches. We propose a quantum-corrected semiclassical approach to device design and optimization, complementing a drift-diffusion solver with a nonequilibrium Green’s function description of band-to-band tunneling in the buried tunnel junction, and a local density of states computed from the solution of the Schrödinger equation in the superlattice active region.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114629321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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