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2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Non-Uniform Time-Stepping For Fast Simulation of Photodetectors Under High-Peak-Power, Ultra-Short Optical Pulses 峰值功率超短光脉冲下光电探测器快速仿真的非均匀时间步进
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894823
Ergun Simsek, Ishraq Md Anjum, T. Carruthers, C. Menyuk
{"title":"Non-Uniform Time-Stepping For Fast Simulation of Photodetectors Under High-Peak-Power, Ultra-Short Optical Pulses","authors":"Ergun Simsek, Ishraq Md Anjum, T. Carruthers, C. Menyuk","doi":"10.1109/NUSOD54938.2022.9894823","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894823","url":null,"abstract":"A novel non-uniform time-stepping procedure is developed to reduce the memory usage and simulation time—by two orders of magnitude—of photodetectors when detecting high-peak-power, ultra-short optical pulses. The proposed procedure can be used in other marching-on-in-time solvers to achieve the same for the simulations dealing with ultra-short pulses.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124431329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Numerical modeling and experimental verification of advanced methods for characterization of broadband optical pulses and optical frequency combs 宽带光脉冲和光频梳特性的数值模拟与实验验证
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894791
A. Andrianov, E. Anashkina
{"title":"Numerical modeling and experimental verification of advanced methods for characterization of broadband optical pulses and optical frequency combs","authors":"A. Andrianov, E. Anashkina","doi":"10.1109/NUSOD54938.2022.9894791","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894791","url":null,"abstract":"We propose novel linear method for measuring ultrafast pulse trains with extremely high pulse repetition rates that are commonly generated in nonlinear microresonators. The method combines single-shot spectral interferometry with the reference pulses and an advanced version of the frequency resolved optical gating algorithm to reconstruct the initially unknown reference pulses.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122020289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of the Spectral Behavior in High-Power Distributed Feedback Lasers above Threshold 阈值以上高功率分布式反馈激光器光谱特性的仿真
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894807
M. Reggentin, J. Koester, H. Wenzel, A. Knigge
{"title":"Simulation of the Spectral Behavior in High-Power Distributed Feedback Lasers above Threshold","authors":"M. Reggentin, J. Koester, H. Wenzel, A. Knigge","doi":"10.1109/NUSOD54938.2022.9894807","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894807","url":null,"abstract":"We report on the simulations of mode hopping behavior in semiconductor distributed feedback lasers with asymmetric facet reflectivities above threshold and its dependence on the phase between the grating and the high reflective facet.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121050179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inverse Design of Multilayer Thin film by Deep Neural Network 基于深度神经网络的多层薄膜反设计
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894794
Preetam Kumar, Fekadu Mihret, Arpita Mishra, E. Shivaleela, T. Srinivas
{"title":"Inverse Design of Multilayer Thin film by Deep Neural Network","authors":"Preetam Kumar, Fekadu Mihret, Arpita Mishra, E. Shivaleela, T. Srinivas","doi":"10.1109/NUSOD54938.2022.9894794","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894794","url":null,"abstract":"Inverse Design of TiO2 – SiO2 based multilayer thin film for normal incidence of TM polarized light in visible region by Deep Neural Network is reported. The simulated and the target transmission spectra are closely following.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band structures in highly strained 3D nanowires 高应变三维纳米线的能带结构
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894837
Y. Hadjimichael, O. Marquardt, C. Merdon, P. Farrell
{"title":"Band structures in highly strained 3D nanowires","authors":"Y. Hadjimichael, O. Marquardt, C. Merdon, P. Farrell","doi":"10.1109/NUSOD54938.2022.9894837","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894837","url":null,"abstract":"We mathematically derive a new nonlinear strain model to simulate the conduction and valence bands in highly bent 3D hexagonal nanowires with GaAs core and asymmetric $(mathrm{Al}_{alpha}mathrm{In}_{1-alpha})$As stressor. The model is based on a transformation of the 1st Piola-Kirchhoff stress tensor and an appropriate energy functional that captures the dynamics of the induced strain due to lattice number mismatch. Finally, we solve PDE model via the finite element method and use the strain profiles as input to a ${mathrm {k}}cdot {mathrm {p}}$ simulation tool to compute the energy bands.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121481698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulation on the dependence of photoresponse on the thickness of the charge layer for GaN SAM avalanche photodiodes 氮化镓SAM雪崩光电二极管光响应随电荷层厚度变化的数值模拟
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894796
Xiaodong Wang, Muran Wang, H. Cui, Zewen Wang, Yulu Chen, Weiyi Ma
{"title":"Numerical simulation on the dependence of photoresponse on the thickness of the charge layer for GaN SAM avalanche photodiodes","authors":"Xiaodong Wang, Muran Wang, H. Cui, Zewen Wang, Yulu Chen, Weiyi Ma","doi":"10.1109/NUSOD54938.2022.9894796","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894796","url":null,"abstract":"GaN avalanche photodiode (APD) has important application prospects in the field of solar-blind ultraviolet (UV) detections. The back-illuminated GaN-based detector has been widely studied due to the advantages such as easy integration with readout circuit. Numerical model of GaN APD is established. The influence of the key function layer (charge layer) thickness on the device response and response current is also studied. Besides, the ideal charge layer thickness with the highest response is calculated.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123936930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Volume exclusion effects in perovskite charge transport modeling 钙钛矿电荷输运模型中的体积排斥效应
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1007/s11082-023-05125-9
Dilara Abdel, N. Courtier, P. Farrell
{"title":"Volume exclusion effects in perovskite charge transport modeling","authors":"Dilara Abdel, N. Courtier, P. Farrell","doi":"10.1007/s11082-023-05125-9","DOIUrl":"https://doi.org/10.1007/s11082-023-05125-9","url":null,"abstract":"","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123780181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Highly Efficient Dome Shaped Nanowires Solar Cell 高效圆顶纳米线太阳能电池
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894834
R. El-Bashar, M. Hameed, S. Obayya
{"title":"Highly Efficient Dome Shaped Nanowires Solar Cell","authors":"R. El-Bashar, M. Hameed, S. Obayya","doi":"10.1109/NUSOD54938.2022.9894834","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894834","url":null,"abstract":"The optical characteristics of Si dome-tapered nanowires (NWs) solar cell (SC) are reported and analyzed by using finite difference time domain method. The geometrical parameters are studied to maximize the light absorption and hence the ultimate efficiency and short circuit current density of the reported NWs SC. The dome-shaped NWs show better absorption enhancement than the conventional conical design especially in the longer wavelength range. This is due to the better tapering gradient of the active material compared to the conventional conical-NWs. Therefore, the light reflection is reduced from the proposed NWs while the absorption is improved. The ultimate efficiency of the dome and conical shaped NWs are equal to 38% and 34.9%, respectively. Further, the achieved short circuit current density is equal to 33.6 mA/cm2 with an improvement of 12.5% compared to the conical-NWs.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130995985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of Partially Reflecting Boundary Conditions in the Generalized Maxwell-Bloch Equations 广义Maxwell-Bloch方程部分反射边界条件的实现
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894802
Michael A. Schreiber, Johannes Popp, Lukas Seitner, M. Haider, C. Jirauschek
{"title":"Implementation of Partially Reflecting Boundary Conditions in the Generalized Maxwell-Bloch Equations","authors":"Michael A. Schreiber, Johannes Popp, Lukas Seitner, M. Haider, C. Jirauschek","doi":"10.1109/NUSOD54938.2022.9894802","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894802","url":null,"abstract":"Perfectly matched layer (PML) boundary conditions have been used for several decades for the simulation of open domains within the finite difference time domain (FDTD) method. In this paper, we report on a new PML-based partially reflecting boundary condition for the generalized Maxwell-Bloch equations that enables setting a certain value of reflectance R at the end of the simulation domain. To evaluate the performance of the method, we present an error analysis and simulation results of a real optoelectronic device.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129424903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Steady states in dynamical semiconductor laser models and their analysis 动态半导体激光模型中的稳态及其分析
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894775
M. Radziunas
{"title":"Steady states in dynamical semiconductor laser models and their analysis","authors":"M. Radziunas","doi":"10.1109/NUSOD54938.2022.9894775","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894775","url":null,"abstract":"We present an algorithm for calculating steady states in the dynamic PDE model for SLs admitting gain compression, spatial hole burning, and multilevel carrier rate equations. Presented example simulations rely on 1(time)+1(space)dimensional traveling-wave- and Lang-Kobayashi-type models.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130044467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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