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Ray Tracing Simulation of a GaN-based integrated LED-Photodetector System 基于gan的集成led光电探测器系统的光线追踪仿真
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894843
P. Amiri, O. Casals, M. Maur, J. Prades
{"title":"Ray Tracing Simulation of a GaN-based integrated LED-Photodetector System","authors":"P. Amiri, O. Casals, M. Maur, J. Prades","doi":"10.1109/NUSOD54938.2022.9894843","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894843","url":null,"abstract":"An optical sensor system consisting of a pair of GaN LED and Photodetector (PD) is simulated using COMSOL Multiphysics, and the possibility of using this system as absorption coefficient sensor is studied. By locating both LED and PD on a same substrate and measuring transmitted power to the PD, it would be possible to sense changes in the optical parameters of the transmission path. In the present work, the gap between LED-PD pair is filled with an ink, and the optical extinction coefficient of the ink is monitored by measuring transmitted power from the LED to the PD.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125917574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles computation of charge-carrier recombination coefficients in optoelectronic materials 光电材料中载流子复合系数的第一性原理计算
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894789
Xie Zhang
{"title":"First-principles computation of charge-carrier recombination coefficients in optoelectronic materials","authors":"Xie Zhang","doi":"10.1109/NUSOD54938.2022.9894789","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894789","url":null,"abstract":"Charge-carrier recombination plays a decisive role in determining the efficiency of optoelectronic materials and devices, but their accurate experimental measurements and interpretation are challenging. In this context, first-principles computation of charge-carrier recombination coefficients is particularly useful. It allows not only rigorous computation of the recombination rates, but also intuitive interpretation of the microscopic recombination mechanisms from the electronic structure point of view. In recent years, we have developed a full set of first-principles approaches to compute the coefficients of different types of recombination processes. These methods are applied to technologically very important optoelectronic materials such as halide perovskites, which yield critical insights into the loss mechanisms and potential strategies for improved materials design.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126146089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling an Acousto-Optic Beam Shaping Device for a DIRCM Laser Laboratory Setup DIRCM激光实验室声光整形装置的建模
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894754
M. Z. Keskin, Z. G. Figen, İ. Özdür
{"title":"Modelling an Acousto-Optic Beam Shaping Device for a DIRCM Laser Laboratory Setup","authors":"M. Z. Keskin, Z. G. Figen, İ. Özdür","doi":"10.1109/NUSOD54938.2022.9894754","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894754","url":null,"abstract":"Directed Infrared Counter Measure (DIRCM) laser laboratory setups are used to mimic the real life DIRCM system and IR heat-seeking missile engagement scenarios in isolated laboratory environments. Typically, the output beam of a mid-infrared (Mid-IR) laser source is modulated in time using an acousto-optic (AO) modulator (AOM). Following the AOM in the optical path, within a distance of few meters, the laser beam is expanded and collimated, using traditional methods to have almost a uniform intensity profile at the target aperture [1, 2]. The whole process results in the simulation of the engagement of a countermeasure laser with an IR heat-seeking missile on an optical table. AO devices, besides their common usage of modulation, can also be used to transform a given laser beam profile into various other beam profiles [3]. By applying an RF signal consisting of multiple frequency components to an AO device, diffraction occurs into multiple orders. By this way, various beam profiles can be obtained along the optical path. In this study, we analyze the usage of an AO device in order to have an expanded beam profile with a uniform intensity distribution at few meters away from the laser source that is enough to cover an IR seeker’s aperture. With the use of an AO device for beam shaping, we aim to alleviate the need of costly and complex optical setups. The analysis is made in two dimensions using a numerical simulation software, which employs the finite element method with appropriate boundary conditions.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125442769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
120° Hybrid for Bimodal Interferometers 120°混合用于双峰干涉仪
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894773
C. Schweikert, N. Hoppe, W. Vogel, M. Berroth
{"title":"120° Hybrid for Bimodal Interferometers","authors":"C. Schweikert, N. Hoppe, W. Vogel, M. Berroth","doi":"10.1109/NUSOD54938.2022.9894773","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894773","url":null,"abstract":"An 120° hybrid for bimodal interferometers in the 220 nm silicon-on-insulator technology is presented. Three output signals enable an unambiguous phase detection over a 360°-range as well as a constant sensitivity. The length of the hybrid is only 190 μm with a simulated excess loss of 0.16 dB. Measurements combined with digital signal processing verify the functionality of a fabricated 120° hybrid.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122752056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Built-in electric field in irregular morphologies of bulk-heterojunction solar cells 块状异质结太阳能电池不规则形态的内建电场
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894813
I. C. Flores-Contreras, V. Cabrera-Arenas, L. Reséndiz-Mendoza
{"title":"Built-in electric field in irregular morphologies of bulk-heterojunction solar cells","authors":"I. C. Flores-Contreras, V. Cabrera-Arenas, L. Reséndiz-Mendoza","doi":"10.1109/NUSOD54938.2022.9894813","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894813","url":null,"abstract":"This paper theoretically analyzes the built-in electric field distribution in bulk heterojunction solar cells. The approach proposed leads to explore the impact of regular and irregular morphologies on the performance of these devices. The width of the depletion region at the donor-acceptor interface is set by the doping concentration. The proposed analysis resulted in the best behavior for an interdigitated structure and the worst for the planar heterojunction cell as expected.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"434 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120866887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
One channel tunable bandpass superconducting filter for wavelength selective switching applications in communications systems 用于通信系统波长选择开关的单通道可调谐带通超导滤波器
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894811
L. E. G. Reyes, Lina M. Segura-Gutierrez, J. E. Ordoñez, G. Zambrano, J. H. Reina
{"title":"One channel tunable bandpass superconducting filter for wavelength selective switching applications in communications systems","authors":"L. E. G. Reyes, Lina M. Segura-Gutierrez, J. E. Ordoñez, G. Zambrano, J. H. Reina","doi":"10.1109/NUSOD54938.2022.9894811","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894811","url":null,"abstract":"We design and evaluate the performance of optical filters that are built from one-dimensional photonic crystals (PhCs) amenable for integration into optical networks based on wavelength division multiplexing (WDM). The photonic heterostructures comprise the integration of a ferroelectric (BaTiO3), a dielectric (Y2 O3), and a critical high-temperature superconductor material (YBa2 Cu3 O7-x) in between. Such nanosystems can allow for routing and switching optical signals at well defined wavelengths in the near-infrared spectral regions, as required in optical telecommunication channels. By tailoring the superconductor key parameters (e.g. layer thickness), temperature and the direction of the incident light, we provide a computational test-bed for the implementation of multiplexed PhC-optical filters that can be integrated into either photonic and optoelectronic circuits or in devices for the transmission of information that work in the 1300 - 1700 nm range. The proposed filters are expected to work at very low-temperature environments (e.g., outer space conditions).","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114878599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
OFDM Transmission Using a Self-seeded Ring Cavity Based on a Semiconductor Optical Amplifier 基于半导体光放大器的自种子环形腔OFDM传输
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894840
Raed El Hassanieh, P. Morel, M. Hamze, V. Quintard, A. Pérennou, A. Sharaiha
{"title":"OFDM Transmission Using a Self-seeded Ring Cavity Based on a Semiconductor Optical Amplifier","authors":"Raed El Hassanieh, P. Morel, M. Hamze, V. Quintard, A. Pérennou, A. Sharaiha","doi":"10.1109/NUSOD54938.2022.9894840","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894840","url":null,"abstract":"This paper discusses the transmission of optical Orthogonal Frequency-Division Multiplexing (OFDM) format modulation in a resonant cavity based on a Semiconductor Optical Amplifiers Fiber Cavity Laser (SOA-FCL). The OFDM Subcarriers are configured and transmitted to fit the Cavity Resonance Modes (CRM). As a result, the authors show a novel principle of OFDM transmission in a self-seeded cavity, which reduces the Error Vector Magnitude.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"497 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128156169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers 界面粗糙度散射的微观建模及其在量子级联激光器模拟中的应用
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894753
T. Grange, S. Mukherjee, G. Capellini, M. Montanari, L. Persichetti, L. Gaspare, S. Birner, A. Attiaoui, O. Moutanabbir, M. Virgilio, M. Seta
{"title":"Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers","authors":"T. Grange, S. Mukherjee, G. Capellini, M. Montanari, L. Persichetti, L. Gaspare, S. Birner, A. Attiaoui, O. Moutanabbir, M. Virgilio, M. Seta","doi":"10.1109/NUSOD54938.2022.9894753","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894753","url":null,"abstract":"The theory of interface roughness (IFR) scattering in semiconductor heterostructures is well established in the case of idealized abrupt interfaces [1]. However, in reality, interfaces have a finite width, i.e. interfaces are graded. In such case, the effect of interface roughness, i.e. the breaking of in-plane invariance, a general framework has been lacking to describe the induced scattering processes.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125623534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly Efficient and Novel Lumped Michelson Modulator using Vertical PN junction based Phase Shifter 基于垂直PN结移相器的高效新型集总迈克尔逊调制器
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894847
M. A. Hamdani, G. Qazi, S.K. Naik, R. Sugesh, M.A Magray
{"title":"Highly Efficient and Novel Lumped Michelson Modulator using Vertical PN junction based Phase Shifter","authors":"M. A. Hamdani, G. Qazi, S.K. Naik, R. Sugesh, M.A Magray","doi":"10.1109/NUSOD54938.2022.9894847","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894847","url":null,"abstract":"Vertical PN depletion phase shifter based novel Common Mirror Michelson Modulator is proposed. It has a lower $mathrm{V}_{mathfrak{n}}mathrm{L}_{mathfrak{n}}$, higher ER for a particular value of source impedance at a given bitrate and doping than conventional PN phase shifter based modulator.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133810457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency 效率> 21.67%的无铅Cs2CuSbCl6钙钛矿太阳能电池性能评价
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894835
Ajay Kumar, Melvin Saji Thomas, N. Gupta, Aditya Jain
{"title":"Performance Evaluation of Lead-Free Cs2CuSbCl6 Perovskite Solar Cells for > 21.67% Efficiency","authors":"Ajay Kumar, Melvin Saji Thomas, N. Gupta, Aditya Jain","doi":"10.1109/NUSOD54938.2022.9894835","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894835","url":null,"abstract":"This work investigates the performance of Cs<inf>2</inf>CuSbCl<inf>6</inf>-based lead-free perovskite solar cells for photovoltaic applications. Cs<inf>2</inf>CuSbCl<inf>6</inf> has a bandgap of 1.7eV and it is a durable and non-toxic material. Cs<inf>2</inf>CuSbCl<inf>6</inf> can absorb more photons and thus obtain high efficiency. This work has been performed using SCAPS-1D software with the focus on optimizing the absorber layer thickness in terms of solar cell performance metrics such as efficiency (η), fill-factor (FF), open-circuit voltage (V<inf>oc</inf>), and short-circuit current density (J<inf>sc</inf>). The highest efficiency of 21.67% has been obtained for the optimized value of the absorber layer thickness of 900 nm, with values of 1.22 V, 21.19 mA/cm<sup>2</sup>, and 83.19% for V<inf>oc</inf>, J<inf>sc</inf>, and FF respectively. Thus, Cs<inf>2</inf>CuSbCl<inf>6</inf> -based solar cell paves as the safe alternative to lead-based solar cells for photovoltaic applications.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115647933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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