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2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes 工作温度对GaN/AlGaN SAM雪崩光电二极管光传递特性影响的数值模拟
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894797
Muran Wang, Zewen Wang, Xiaodong Wang, H. Cui, Yulu Chen, Weiyi Ma
{"title":"Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes","authors":"Muran Wang, Zewen Wang, Xiaodong Wang, H. Cui, Yulu Chen, Weiyi Ma","doi":"10.1109/NUSOD54938.2022.9894797","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894797","url":null,"abstract":"GaN/AlGaN avalanche photodiodes (APDs) have important application values and broad application potentials in the field of solar-blind ultraviolet (UV) detection. However, the self-heating effect has an obvious influence on the output characteristics of GaN/AlGaN APDs. In order to study the influence of self-heating temperature on its performance, the numerical model of GaN/AlGaN APDs is established and the dark current as well as response at different temperatures are studied.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128219926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Network Authentication with Synchronized Chaotic Lasers 网络认证与同步混沌激光
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894748
Lorenzo Lombardi, V. Annovazzi-Lodi, G. Aromataris
{"title":"Network Authentication with Synchronized Chaotic Lasers","authors":"Lorenzo Lombardi, V. Annovazzi-Lodi, G. Aromataris","doi":"10.1109/NUSOD54938.2022.9894748","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894748","url":null,"abstract":"We numerically study a hardware method for network authentication, where a pair of matched (twins) chaotic lasers generate the same chaos when they synchronize, being subject to the same optical injection from a third chaotic laser. One of the lasers is in the secure environment, the other in the unsecure environment, and authorization is granted only if the two responses match. As in other PUF (Physically Unclonable Functions) related schemes, security is based on unavoidable differences between nominally identical but physically separate devices, and, more specifically, to the sensitivity of chaos to laser parameter dispersion.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128877214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mode-Guided Infrared Absorption in Ge/SiO2 Grating for Large-Angle and Broadband Photodetection Ge/SiO2光栅模式引导红外吸收用于大角度宽带光探测
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894845
Ching-Yu Hsu, Z. Pei, Jia-Ming Liu
{"title":"Mode-Guided Infrared Absorption in Ge/SiO2 Grating for Large-Angle and Broadband Photodetection","authors":"Ching-Yu Hsu, Z. Pei, Jia-Ming Liu","doi":"10.1109/NUSOD54938.2022.9894845","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894845","url":null,"abstract":"The numerical simulation of the electromagnetic properties of the Ge/SiO2 grating structure with bottom distributed Bragg reflector. With mode guiding in Ge, the structure exhibits an absorption angle of 100o and broadband behavior from 1300 to 1500 nm.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133087363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Optimization of Surface Plasmon Resonance based Sensors from the First Principle 基于第一原理的表面等离子体共振传感器性能优化
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894760
Himanshu Kushwah, J. K. Anand
{"title":"Performance Optimization of Surface Plasmon Resonance based Sensors from the First Principle","authors":"Himanshu Kushwah, J. K. Anand","doi":"10.1109/NUSOD54938.2022.9894760","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894760","url":null,"abstract":"Performance optimization of surface plasmon resonance (SPR) based sensors due to improvement in input optical coupling is theoretically investigated from the first principle. Various design parameters are optimized in a typical prism coupling Kretschmann configuration. © 2022 The Author(s).","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132806232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Near-IR and Mid-IR Cascade Raman Microlasers Based on Bismuth-Modified Tungsten-Tellurite Glass 基于铋改性钨碲玻璃的近红外和中红外级联拉曼微激光器仿真
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894819
E. Anashkina, A. Andrianov
{"title":"Simulation of Near-IR and Mid-IR Cascade Raman Microlasers Based on Bismuth-Modified Tungsten-Tellurite Glass","authors":"E. Anashkina, A. Andrianov","doi":"10.1109/NUSOD54938.2022.9894819","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894819","url":null,"abstract":"We theoretically investigate cascade Raman generation in bismuth-modified tungsten-tellurite glass microlasers, for the first time for microcavities based on TeO2 glasses. The calculated results demonstrate the opportunities of CW Raman generation in the near-IR and mid-IR ranges with CW pump at the wavelength of 1.55 $mu mathrm{m}$. The predicted wavelengths are 1.81 $mu mathrm{m}$, 2.17 $mu mathrm{m}$, 2.70 $mu mathrm{m}$, and 3.59 $mu mathrm{m}$ for the 1st, 2nd, 3rd, and 4th Raman orders, respectively. The diagram of power thresholds was calculated, as well as the output powers as functions of the pump power and detuning between the pump frequency and the corresponding microcavity eigenfrequency.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115150977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Optical Planar Waveguide Sensor for Microplastics Detection in Water 光平面波导传感器在水中微塑料检测中的仿真研究
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894821
N. M. Razali, N. Saris
{"title":"Simulation of Optical Planar Waveguide Sensor for Microplastics Detection in Water","authors":"N. M. Razali, N. Saris","doi":"10.1109/NUSOD54938.2022.9894821","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894821","url":null,"abstract":"Nowadays, microplastics pollution has become a global concern as it endangers the ecology, marine animals, and cause health threats to human beings. This paper attempted to simulate an optical planar waveguide sensor for microplastics detection in water via Wave Optics Module-COMSOL Multiphysics®. The analyte refractive index was ranged from 1.4800 to 1.5000 RIU, in reference to the microplastics refractive index. The simulation results showed significant variations in the evanescent waves of the sensor at different analyte refractive indices, thus proving that the sensor has potential for microplastics detection in water with sensitivity of 0.0040 in dimensionless unit.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134041498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-Cross-Talk Metal-Dielectric-Metal Waveguide Intersections Based on Sodium 基于钠的低串扰金属-介电-金属波导交叉
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894781
V. Rodriguez‐Esquerre, Claudio Garrido Muzis Sobrinho, P. Barreto, G. N. Malheiros-Silveira
{"title":"Low-Cross-Talk Metal-Dielectric-Metal Waveguide Intersections Based on Sodium","authors":"V. Rodriguez‐Esquerre, Claudio Garrido Muzis Sobrinho, P. Barreto, G. N. Malheiros-Silveira","doi":"10.1109/NUSOD54938.2022.9894781","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894781","url":null,"abstract":"We analyzed the transmission properties of two plasmonic waveguides crossing by using numerical simulations. The subwavelength width waveguides are composed of sodium-air-sodium. The crossing structure is composed by a compact cross-shaped resonant cavity with a four-fold symmetry. The results demonstrated the feasibility of using sodium as a low loss material for several applications for nanoplasmonic integrated circuits implementation.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133133297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rigorous modal analysis of micro or nanoresonators 微纳谐振器的严格模态分析
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894778
P. Lalanne
{"title":"Rigorous modal analysis of micro or nanoresonators","authors":"P. Lalanne","doi":"10.1109/NUSOD54938.2022.9894778","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894778","url":null,"abstract":"The most general motion of a system is a superposition of its normal modes, or eigenstates. We report our recent developments of a rigorous modal analysis of electromagnetic resonators, which is accurate even for geometries that have not been analyzed so far, e.g. 3D resonators made of dispersive media and placed in non-homogeneous backgrounds (on a substrate or an optical thin film stacks).","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125580015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Analysis of Electrically Pumped Si-GeSn/GeSn Quantum Well Transistor Laser 电泵浦Si-GeSn/GeSn量子阱晶体管激光器的数值分析
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894800
R. Ranjan, Prakash Pareek, N. Malviya
{"title":"Numerical Analysis of Electrically Pumped Si-GeSn/GeSn Quantum Well Transistor Laser","authors":"R. Ranjan, Prakash Pareek, N. Malviya","doi":"10.1109/NUSOD54938.2022.9894800","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894800","url":null,"abstract":"The threshold current density of electrically pumped Sn incorporated group IV alloy based transistor laser (TL) is analyzed by proposing and designing a theoretical model for the same. Active region for the lasing action is formed by strain compensated GeSn single quantum well (QW) in the base of the transistor. The threshold current density for lasing action is determined with the help of obtained modal and other losses, and calculated material gain. The obtained threshold current density in the range of 2-3kA/cm2 indicates that design of purely group-IV material based TL is viable and realistic.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130155407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Genetic algorithm optimization of infrared plasmonic absorbers 红外等离子体吸收器的遗传算法优化
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894768
D. Bezerra, V. Rodriguez‐Esquerre
{"title":"Genetic algorithm optimization of infrared plasmonic absorbers","authors":"D. Bezerra, V. Rodriguez‐Esquerre","doi":"10.1109/NUSOD54938.2022.9894768","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894768","url":null,"abstract":"The absorption of a multiband absorber based on a periodical plasmonic grating has been optimized. The optical and geometrical parameters of the plasmonic structure which is composed of germanium and gold are determined by an efficient genetic algorithm. The electromagnetic response of the absorber is numerically obtained by using the frequency domain finite element method. A multiband absorber with near unity absorption in the mid-and long-wave infrared region from 3.5 μm to7 μm has been obtained.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127343427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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