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3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors 垂直Ge-on-Si引脚波导光电探测器的三维多物理场瞬态建模
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894739
Alasio Matteo G. C., Paolo Franco, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, G. Masini, F. Forghieri, G. Ghione, M. Goano
{"title":"3D multiphysics transient modeling of vertical Ge-on-Si pin waveguide photodetectors","authors":"Alasio Matteo G. C., Paolo Franco, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, G. Masini, F. Forghieri, G. Ghione, M. Goano","doi":"10.1109/NUSOD54938.2022.9894739","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894739","url":null,"abstract":"We report transient simulations of Ge-on-Si vertical pin waveguide photodetectors (WPDs), where the optical generation term used by the time-domain model is the FDTD solution of the electromagnetic problem treated as a spatially-distributed pulsed signal. This approach, validated against experimental measurements of the frequency response, paves the way to future studies of the dynamic response of WPDs, enabling the description of complex modulation schemes including saturation effects and current tails due to slow carriers.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128867868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical investigation of optical bistability in inhomogeneous PT-symmetric gratings 非均匀pt对称光栅光学双稳性的数值研究
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894755
S. Sudhakar, S. Vignesh Raja, A. Govindarajan
{"title":"Numerical investigation of optical bistability in inhomogeneous PT-symmetric gratings","authors":"S. Sudhakar, S. Vignesh Raja, A. Govindarajan","doi":"10.1109/NUSOD54938.2022.9894755","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894755","url":null,"abstract":"Customizing the nonlinear profile along the direction of propagation helps in the realization of low-power alloptical switches. The switching intensities are extremely low (< 0.01) in the broken regime provided that the light launching direction is right. It is believed that the switching intensities in the broken regime are always higher than that of the unbroken regime. But, the proposed system displays the lowest switching intensities in the broken regime. The interplay between inhomogeneous nonlinearity, broken $mathcal{PT}$-symmetry and right light incidence gives rise to the switch-down mechanism at near-zero switching intensities.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124461942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RGB LED active region design and optimization with Genetic Evolution Algorithm 基于遗传进化算法的RGB LED有源区域设计与优化
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894756
Denis V. Mamedov, M. Kisin, C. Chuang, H. El-Ghoroury
{"title":"RGB LED active region design and optimization with Genetic Evolution Algorithm","authors":"Denis V. Mamedov, M. Kisin, C. Chuang, H. El-Ghoroury","doi":"10.1109/NUSOD54938.2022.9894756","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894756","url":null,"abstract":"Multi-quantum-well (MQW) LED is a complex distributed system with strong interaction between two opposite carrier flows, electrons and holes. For both types of carriers, the carrier injection into each QW depends on transport conditions across the whole active region (AR) and is affected by capture-recombination balance in all active QWs. Multi-color LEDs with different types of QWs are especially sensitive to the details of the active region’s layout. In this work, we use genetic evolutionary analysis to design tri-color LED. We show that full RGB gamut coverage requires optimized compositional intermediate carrier blocking layers (ICBLs) separating the optically active QWs. We also show that compositional ICBLs cannot be replaced by optimized doping of quantum barriers (QBs) alone.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123364729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Assessment of Bloch Surface Wave 1D-PhC Sensor using Ba2NaNb5O15 Defect Layer 采用Ba2NaNb5O15缺陷层的Bloch表面波1D-PhC传感器的数值评估
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894814
K. Sagar, Ajay Kumar
{"title":"Numerical Assessment of Bloch Surface Wave 1D-PhC Sensor using Ba2NaNb5O15 Defect Layer","authors":"K. Sagar, Ajay Kumar","doi":"10.1109/NUSOD54938.2022.9894814","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894814","url":null,"abstract":"In this paper, a top defective layer of Barium sodium niobate (Ba<inf>2</inf>NaNb<inf>5</inf>O<inf>15</inf>) material of nanometer range thickness is used to confine Bloch surface mode at the upper interface of the proposed structure. For a 1275 nm operating wavelength, the structural characteristics are intended to stimulate a BSW at the top interface. Wavelength interrogation, angle interrogation, and a surface electric field profile are used to confirm mode confinement. It has been demonstrated that Ba<inf>2</inf>NaNb<inf>5</inf>O<inf>15</inf> is an excellent material for electro-optic and nonlinear optics applications. The impact of Ba<inf>2</inf>NaNb<inf>5</inf>O<inf>15</inf> on the top interface of the photonic crystal on sensing performance is investigated in depth. At a wavelength of 1275 nm, the BSW reflectance curve was obtained by comparing different thickness layers of Ba<inf>2</inf>NaNb<inf>5</inf>O<inf>15</inf> ranging from 45 nm to 85 nm.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"330 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115569188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mid-infrared optical modulator based on D-shaped PCF 基于d形PCF的中红外光调制器
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894750
B. M. Younis, Nada Yazeed, Elahi Usama, Bilal El-Sayed, Mohamed H. Almoqadem, M. El-Sonbaty, A.M. El-shawadfy, Amal Abd-Elaziz, Saleh Mahmoud, M. Hameed, S. Obayya
{"title":"Mid-infrared optical modulator based on D-shaped PCF","authors":"B. M. Younis, Nada Yazeed, Elahi Usama, Bilal El-Sayed, Mohamed H. Almoqadem, M. El-Sonbaty, A.M. El-shawadfy, Amal Abd-Elaziz, Saleh Mahmoud, M. Hameed, S. Obayya","doi":"10.1109/NUSOD54938.2022.9894750","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894750","url":null,"abstract":"Recently, photonic crystal fibers (PCFs) have become of compelling interest due to their diverse applications, especially in the mid-infrared (mid-IR) wavelength regime. In this work, an optical mid-IR modulator based on D-shaped PCF with germanium-antimony-tellurium (GST) as a phase-changing material (PCM) is presented and analyzed. Because of the phase transition of the GST material between amorphous (dielectric-like) and crystalline (metal-like) states, the modulation process can be attained. The optical losses of the fundamental TE mode supported by the PCF core in amorphous (ON) and crystalline (OFF) states are investigated. The results reveal that the suggested modulator has an ultra-high extinction ratio (ER) that approaches 206 dB, while the insertion loss (IL) is less than 9.8 × 10−6 dB throughout the studied wavelength range of 3 – 5.8 μm with a device length (LD) of 0.5 mm.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126935700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical simulation of eco-friendly 4-terminal all perovskite tandem solar cell using novel HTL structure in the bottom sub cell 采用新型HTL结构的环保四端全钙钛矿串联太阳能电池的数值模拟
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894738
M. Moradbeigi, M. Razaghi
{"title":"Numerical simulation of eco-friendly 4-terminal all perovskite tandem solar cell using novel HTL structure in the bottom sub cell","authors":"M. Moradbeigi, M. Razaghi","doi":"10.1109/NUSOD54938.2022.9894738","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894738","url":null,"abstract":"In this paper, we proposed a free-pb 4-terminal (4T) all perovskite tandem solar cell (APTSC) as reference with the power conversion efficiency (PCE) of 26.42%. First, a 100 nm ${MgF}_{2}$ thin film is used as an antireflection layer (ARL) of the top sub cell to improve the total PCE of the reference structure. The total PCE has increased by 7.12%. Finally, a new structure hole transport layer made of CuSCN nanowire arrays in the bottom sub cell is applied. By comparing two different cross sections for CuSCN nanowire arrays, the total PCE of the circular-cross section CuSCN nanowire arrays is incresed 0.52% compared to square-cross section CuSCN nanowire arrays. Therefore, a free-pb 4T APTSC with circular-cross section CuSCN nanowire arrays as hole transport layer is the best based on the total PCE, which reached 29.21%. This is 10.56% higher than the reference structure’s total PCE.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126695193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the Effects of Surface Recombination Velocity in Scanning Photocurrent Microscopy for Ohmic-Contact Thin-Film Devices 欧姆接触薄膜器件扫描光电流显微镜中表面复合速度的影响建模
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894801
Yu-Chien Wei, M.-H. Mao
{"title":"Modeling the Effects of Surface Recombination Velocity in Scanning Photocurrent Microscopy for Ohmic-Contact Thin-Film Devices","authors":"Yu-Chien Wei, M.-H. Mao","doi":"10.1109/NUSOD54938.2022.9894801","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894801","url":null,"abstract":"We studied numerically the carrier transport and confirmed the feasibility of our scanning photocurrent microscopy model in the minority carrier decay length extraction under different surface recombination velocities at the surfaces of ohmic-contact thin-film devices.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126257573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inverse Hyperbolic-Tangent Pre-distortion for OOFDM Systems OOFDM系统的逆双曲正切预失真
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894793
Safana Alzoubi, Mohamed Shehata
{"title":"Inverse Hyperbolic-Tangent Pre-distortion for OOFDM Systems","authors":"Safana Alzoubi, Mohamed Shehata","doi":"10.1109/NUSOD54938.2022.9894793","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894793","url":null,"abstract":"We propose an inverse hyperbolic-tangent-based digital pre-distorter that can suppress the Mach-Zehnder modulator-induced harmonic distortions by about 13 dB for single-tone signals, while maintaining the peak-to-average power ratio in optical orthogonal frequency division multiplexed signals.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114445410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of flux discretizations for varying band edge energies 不同带边能量的通量离散化比较
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894742
J. Moatti, P. Farrell
{"title":"Comparison of flux discretizations for varying band edge energies","authors":"J. Moatti, P. Farrell","doi":"10.1109/NUSOD54938.2022.9894742","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894742","url":null,"abstract":"Recently, a multiscale framework was developed where drift-diffusion is combined with atomistic tight-binding models [1]. A naive flux discretization was proposed to tackle the problem of heavily fluctuating band edge energies which does not take into account mathematical complications. Here we would like to present several alternatives and compare them.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128745561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Poole-Frenkel emission on electroluminescence in quantum dot light emitting devices with Nickel Oxide layer Poole-Frenkel发射对氧化镍层量子点发光器件电致发光的影响
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2022-09-12 DOI: 10.1109/NUSOD54938.2022.9894838
S. Rani, J. Kumar
{"title":"Effect of Poole-Frenkel emission on electroluminescence in quantum dot light emitting devices with Nickel Oxide layer","authors":"S. Rani, J. Kumar","doi":"10.1109/NUSOD54938.2022.9894838","DOIUrl":"https://doi.org/10.1109/NUSOD54938.2022.9894838","url":null,"abstract":"Theoretical analysis of hybrid quantum dot-light emitting devices incorporating CdSe/ZnScore/shell quantum dots and Nickel Oxide (NiO) as hole injection layer (HIL) has been carried out in this work. The replacement of organic HIL such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with solution-processed NiO layer has led to enhancement of current density and luminance in the device by bringing a control in the hole current. The Poole-Frenkel emission affects the current-voltage relationship in low-bias along with space-charge limited current in high-bias voltage range. The temperature and bias-dependent current density has been investigated in this work.","PeriodicalId":321952,"journal":{"name":"2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127831517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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