2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors最新文献

Characterization of deformation induced by micro-second laser anneal using CGS interferometry 用CGS干涉法表征微秒激光退火引起的变形

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690546

D. Owen, Yun Wang, A. Hawryluk, Senquan Zhou, J. Hebb

{"title":"Characterization of deformation induced by micro-second laser anneal using CGS interferometry","authors":"D. Owen, Yun Wang, A. Hawryluk, Senquan Zhou, J. Hebb","doi":"10.1109/RTP.2008.4690546","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690546","url":null,"abstract":"The understanding and control of mechanical stresses accumulated during device fabrication is becoming more critical at advanced technology nodes. For example, e-SiGe is being used more and more extensively to strain the channel and improve PMOS performance. However, increases in Ge concentration result in increased susceptibility to strain relaxation and severe wafer deformation during advanced thermal processing. As a result, the precise control of the stress induced during annealing is becoming increasing important. This paper describes the use of a stress measurement technology, the Coherent Gradient Sensing (CGS) interferometer, for the characterization of deformation induced during micro-second laser annealing. The unique features of the CGS technique enable not only the characterization of the magnitude of wafer bow and warp, but the local uniformity of strain relaxation. Results are presented showing the relationship between wafer deformation and the fundamental parameters of micro-second laser annealing. In addition, the effects of processing history on laser anneal-induced deformation will also be evaluated, and techniques for managing stress accumulation across an entire process flow will be discussed.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Quality and reliability of oxide by low thermal budget rapid thermal oxidation 低热收支快速热氧化法提高氧化物的质量和可靠性

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690559

Yonah Cho, Yoshitaka Yokota, C. Olsen, A. Tjandra, Kai Ma, Vicky Nguyen

{"title":"Quality and reliability of oxide by low thermal budget rapid thermal oxidation","authors":"Yonah Cho, Yoshitaka Yokota, C. Olsen, A. Tjandra, Kai Ma, Vicky Nguyen","doi":"10.1109/RTP.2008.4690559","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690559","url":null,"abstract":"In order to meet increasing requirement for low thermal budget oxidation in memory and logic applications, RadOx™, previously known as in-situ steam generation (ISSG) oxidation, processes of low thermal budgets were developed. In this paper, oxides obtained by 700°C soak and 900–1050°C spike RadOx™ processes are presented. Sidewall growth behavior in STI-type structures were characterized and showed no bird’s beak encroachment by the developed oxidation processes. Basic bulk oxide (40Å) integrity and reliability characteristics were compared to the 1050°C soak RadOx™ reference. Using planar metal-on-semiconductor (MOS) capacitors as the test vehicles, flat-band voltage (V<inf>fb</inf>), interface trap density (D<inf>it</inf>), leakage current, and stress-induced leakage current (SILC) were measured. V<inf>fb</inf> shift of less than 20mV and D<inf>it</inf> less than 2×1011/cm2 were observed from the low temperature soak and spike oxides. Leakage currents from fresh devices and after high current stressing (0.1A/cm2) were comparable to the reference oxide.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123290951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Total temperature fluctuation of a patternned wafer in the millisecond annealing 微秒退火过程中图像化晶片的总温度波动

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690555

T. Kubo, T. Sukegawa, M. Kase

引用次数: 7

Si surface preparation and passivation by vapor phase of heavy water 重水气相法制备硅表面及钝化

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690558

Andrea Edit Pap, P. Petrik, B. Pécz, G. Battistig, I. Bársony, Zsolt Szekrényes, K. Kamarás, Z. Schay, Z. Nényei

{"title":"Si surface preparation and passivation by vapor phase of heavy water","authors":"Andrea Edit Pap, P. Petrik, B. Pécz, G. Battistig, I. Bársony, Zsolt Szekrényes, K. Kamarás, Z. Schay, Z. Nényei","doi":"10.1109/RTP.2008.4690558","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690558","url":null,"abstract":"In our previously published paper [1, 2] we demonstrated that deuterium adsorbs on Si surface at room temperature much stronger than hydrogen [3, 4]. Moreover, in case of deuterium passivated wafers the vacuum storage can be omitted without risking the non-controlled native oxidation of silicon for up to 5 hours or more. It could be a suitable and more robust surface cleaning and passivation process for the industry, but heavy water is expensive. As a cheaper procedure, we present in this paper the results of our studies in which the Si surface is treated in vapor phase of heavy-water (D2O) + 50% HF (e.g. 20:1) mixture at 25, 40, 50 and 65 °C, for 1, 10 and 60 minutes. The surface evolution of the D-passivated surface was followed by contact angle measurements, by spectroscopic ellipsometry (SE), by atomic force microscopy (AFM), by X-ray photoelectron spectroscopy (XPS), by transmission electron microscopy (TEM) and by infrared absorption spectroscopy (IR) qualification and the results were compared to the H-passivated Si surface. It turned out that 1 min vapor phase treatment at 65 °C was enough to remove the native oxide and to passivate the Si surface without any degradation of the atomic surface flatness. Combination of D (or H) passivation with rapid thermal process (RTP) based on the thermal desorption kinetics of the adsorbed D and/or H layers on Si is a promising method for improved interface engineering and for better initial reactions in case of ultra thin dielectric layer formations.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130681414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Control of laser induced interface traps with in-line corona charge metrology 用在线电晕电荷测量法控制激光诱导界面陷阱

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690551

J. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don

引用次数: 2

Channel strain engineering for high performance CMOS technology 高性能CMOS技术的通道应变工程

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690531

H. Nayfeh

引用次数: 1

Basic strain physics 基本应变物理

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690530

S. T. Chang, C. Liu

引用次数: 1

Si spontaneous emission during RTP and its impact on low-temperature pyrometry RTP过程中硅的自发发射及其对低温热分析的影响

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690564

J.P. Li, A. Hunter, Rajesh Ramanujam

{"title":"Si spontaneous emission during RTP and its impact on low-temperature pyrometry","authors":"J.P. Li, A. Hunter, Rajesh Ramanujam","doi":"10.1109/RTP.2008.4690564","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690564","url":null,"abstract":"Si fluorescence or spontaneous emission was discovered during the development of lower-temperature pyrometer. To reveal unambiguously the Si spontaneous emission, a high-power 980nm laser is used together with a high sensitivity IR spectrometer. Clear Si fluorescence spectra with peaks at ∼1140nm were obtained at different Si temperatures. The Si fluorescence peaks shift to longer wavelength, in agreement with Si bandgap narrowing with increasing temperatures. Wafers of different doping levels and types were studied for Si spontaneous emission. It is found that lightly doped (resisitivity ≪20 ohms-cm) Si has the highest level of Si spontaneous emission. On the other hand, heavily doped Si does not generate any Si spontaneous emission, mainly due to the higher recombination. Since the Si spontaneous emission has a broad spectrum, it spills into the RTP pyrometer spectral bandwidth and acts as s spurious pyrometer signal. Even though Si has very low efficiency for light emission due to its indirect bandgap, the fluorescence emitted light is still on the level of pyrometer signal equivalent to ∼200 to 250C.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122903909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low temperature microwave annealing of S/D S/D的低温微波退火

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690556

B. Lojek

引用次数: 10

High-performance bulk CMOS technology with millisecond annealing and strained Si 采用毫秒退火和应变Si的高性能块体CMOS技术

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690536

T. Sugii, K. Ikeda, T. Miyashita

引用次数: 1