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2022 International Conference on IC Design and Technology (ICICDT)最新文献

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A Low-Energy 8-bit CLA Realized by Single-Phase ANT Logic 用单相ANT逻辑实现的低功耗8位CLA
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933106
Durga Srikanth Kamarajugadda, O. L. J. A. Jose, L. Yang, B. Esakki, S. Sampath, Chua-Chin Wang
{"title":"A Low-Energy 8-bit CLA Realized by Single-Phase ANT Logic","authors":"Durga Srikanth Kamarajugadda, O. L. J. A. Jose, L. Yang, B. Esakki, S. Sampath, Chua-Chin Wang","doi":"10.1109/ICICDT56182.2022.9933106","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933106","url":null,"abstract":"Low power and high-speed carry look-ahead adder (CLA) is one of the most demanded digital computation units. This paper demonstrates a CLA based on single-phase ANT logic to achieve low power and high speed. It is featured with load capacitance reduction and no internal loop to enhance the speed and reduce switching activity at the same time. The proposed design is proved to work at the clock frequency of 20 GHz with a load of 60 pF implemented using 40 nm CMOS technology by post-layout simulations, where the power dissipation is observed with a normalized 0.071 mW and the normalized PDP is 0.08 pJ.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125805668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Invited Talk #11: 14-nW Sub-GHz Band Wake up Receiver for IoT applications 特邀演讲#11:用于物联网应用的14-nW Sub-GHz频段唤醒接收器
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933098
{"title":"Invited Talk #11: 14-nW Sub-GHz Band Wake up Receiver for IoT applications","authors":"","doi":"10.1109/icicdt56182.2022.9933098","DOIUrl":"https://doi.org/10.1109/icicdt56182.2022.9933098","url":null,"abstract":"","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129886165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Invited Talk #7: From resilience to Resistive Memory variability in Binarized Neural Networks to exploitation of variability in Bayesian Neural Network 特邀演讲#7:从二值化神经网络中的弹性到抵抗性记忆可变性，再到贝叶斯神经网络中可变性的利用
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933076
{"title":"Invited Talk #7: From resilience to Resistive Memory variability in Binarized Neural Networks to exploitation of variability in Bayesian Neural Network","authors":"","doi":"10.1109/icicdt56182.2022.9933076","DOIUrl":"https://doi.org/10.1109/icicdt56182.2022.9933076","url":null,"abstract":"","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"2002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125762218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise 复杂低温随机电报噪声精确分析的机器学习方法
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933107
Xinze Li, Ying Sun, Jing Wan, Bing Chen, R. Cheng, G. Han
{"title":"Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise","authors":"Xinze Li, Ying Sun, Jing Wan, Bing Chen, R. Cheng, G. Han","doi":"10.1109/ICICDT56182.2022.9933107","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933107","url":null,"abstract":"In this work, the Hidden Markov Model (HMM), and the machine learning methods, namely, K-Medoids clustering and Gaussian Mixture Model (GMM) were used for the data analysis of the complicated RTN signals in 18 nm Fully Depleted Silicon on Insulator (FDSOI) n-FET at low temperature. The differences of the three methods in fitting accuracy, efficiency and the defect location were compared. As compared with the conventional HMM model, the GMM model exhibits the highest fitting accuracy while the K-Medoids clustering shows the highest fitting efficiency. In general, K-Medoids clustering is more balanced in terms of extraction speed and accuracy. The relative locations of the traps within the gate oxide were also calculated, with HMM and K-Medoids show similar trap positions. Hence, the machine learning method provides a new solution for the accurate identification and localization of complicated RTN traps in cryogenic transistors.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"367 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131492926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Invited Talk #18: Monolithic 3D III-V HEMT for future communication and quantum computing 特邀演讲#18:面向未来通信和量子计算的单片3D III-V HEMT
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933095
{"title":"Invited Talk #18: Monolithic 3D III-V HEMT for future communication and quantum computing","authors":"","doi":"10.1109/icicdt56182.2022.9933095","DOIUrl":"https://doi.org/10.1109/icicdt56182.2022.9933095","url":null,"abstract":"","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130988835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling 移动离子场效应晶体管与非晶介质:设备演示和建模
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933118
Huan Liu, Jiajia Chen, C. Jin, Yan Liu, G. Han, Xiao Yu
{"title":"Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling","authors":"Huan Liu, Jiajia Chen, C. Jin, Yan Liu, G. Han, Xiao Yu","doi":"10.1109/ICICDT56182.2022.9933118","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933118","url":null,"abstract":"We have reported ferroelectric (FE)-like behaviors with an amorphous (a-) ZrO2. The physical origin of the FE-like behaviors is systematically investigated by electrical characterization, and confirmed to be the movement of mobile ions existing in the amorphous thin film. A physics-based model for the mobile-ionic field-effect transistor (MIFET) predicts the ferroelectric-type hysteresis and steep subthreshold slope characteristics, which have been demonstrated in an experiment using fabricated MIFET with a-ZrO2 film. Thanks to the modulation of mobile ion, analog synapse based on ZrO2 MIFET exhibits superior symmetry and linearity for both potentiation and depression, has been successfully demonstrated for spiking neural network (SNN) applications. Due to the outstanding property of a-ZrO2, the MIFETs exhibit higher endurance, lower thermal budget, and better scalability than FeFETs with crystallized doped-HfO2, indicating a novel technology for memory and computing applications.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114917380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs 基于tcad的常关p-GaN钝化GaN hemt电学特性研究
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933128
Yubo Wang, Fan Li, Xuan Chi, Wen Liu, Guohao Yu, Zhongkai Du, Baoshun Zhang
{"title":"TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs","authors":"Yubo Wang, Fan Li, Xuan Chi, Wen Liu, Guohao Yu, Zhongkai Du, Baoshun Zhang","doi":"10.1109/ICICDT56182.2022.9933128","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933128","url":null,"abstract":"This paper presents the influence of the energy level and concentration of acceptor or donor traps which could be introduced in the plasma passivation process on the saturation current of etch-free HEMTs. Acceptor traps in passivated pGaN region, and donor traps in SiNx/passivated pGaN and passivated pGaN/AlGaN interface are included in discussion. By the variation of the concentration and energy level of the trap, some general phenomena are discovered. In SiNx/passivated pGaN interface, the saturation current is proportional to the concentration and energy of donor traps. In passivated pGaN region, the saturation current shows negligible variations to the increase of concentration under 1×1018 cm-3 and the energy of acceptor traps. In passivated pGaN/AlGaN interface, the trend is the same as previous: the saturation current is proportional to the concentration and energy of donor traps. However, the saturation current is more sensitive to the change of donor trap concentration in this interface.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128730925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Keynote #4: Artificial Intelligence Verification-The Future of Chip Verification 主题演讲4:人工智能验证——芯片验证的未来
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933074
{"title":"Keynote #4: Artificial Intelligence Verification-The Future of Chip Verification","authors":"","doi":"10.1109/icicdt56182.2022.9933074","DOIUrl":"https://doi.org/10.1109/icicdt56182.2022.9933074","url":null,"abstract":"","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127344735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tutorial #2: Marriage of Ferroelectric Memories and BEOL-compatible Oxide Semiconductors to Empower Future Integrated Circuits 教程#2:铁电存储器和beol兼容氧化物半导体的结合，为未来集成电路提供动力
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933112
{"title":"Tutorial #2: Marriage of Ferroelectric Memories and BEOL-compatible Oxide Semiconductors to Empower Future Integrated Circuits","authors":"","doi":"10.1109/icicdt56182.2022.9933112","DOIUrl":"https://doi.org/10.1109/icicdt56182.2022.9933112","url":null,"abstract":"","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122610352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
140 GHz Energy-Efficient OOK Receiver using Self-Mixer-Based Power Detector in 65nm CMOS 采用65nm CMOS自混频器功率检测器的140ghz节能OOK接收机
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933075
N. Khanh, D. Yamazaki, T. Iizuka
{"title":"140 GHz Energy-Efficient OOK Receiver using Self-Mixer-Based Power Detector in 65nm CMOS","authors":"N. Khanh, D. Yamazaki, T. Iizuka","doi":"10.1109/ICICDT56182.2022.9933075","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933075","url":null,"abstract":"This paper presents an integrated 140 GHz receiver in 65 nm CMOS including a power detector for high-bandwidth and power-efficient communication and radar applications. The mm-wave power detector utilizes a self-mixer scheme by the use of an NMOS transistor fed to a simple RC low-pass filter. Measured result shows that it can operate in a wide-band frequency range of 134–158 GHz and the proposed receiver occupies a small core area of 220 µm×220 µm. To realize the demodulated waveform and bit error rate (BER) measurements, we fabricated a prototype including an OOK modulator followed by the proposed receiver in a 65 nm CMOS process. The prototype successfully demonstrates a demodulated waveform and BER test at 11 Gb/s with a carrier frequency of 140 GHz. The measured BER is 2.1 × 10−4 at 11 Gb/s and less than 1 × 10−11, which is a limit of the BERT, at 8 Gb/s or less. Our OOK transceiver prototype can achieve low power, high isolation, and small die area with more design freedom and suitable for mm-wave D-band communication or radar systems.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132531719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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