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2022 International Conference on IC Design and Technology (ICICDT)最新文献

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Invited Talk #3: Beyond 5G: a view from semiconductors materials to systems 特邀演讲#3:超越5G:从半导体材料到系统的视角
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933081
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引用次数: 0
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer 具有Al2O3/ZrOx/Al2O3电荷捕获层的正常关闭AlGaN/GaN miss - hemts的研究
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933099
Ji-Ning Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu
{"title":"Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer","authors":"Ji-Ning Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu","doi":"10.1109/ICICDT56182.2022.9933099","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933099","url":null,"abstract":"In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al<inf>2</inf>O<inf>3</inf>/ZrO<inf>x</inf>/Al<inf>2</inf>O<inf>3</inf> charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (V<inf>th</inf>) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and I<inf>ON</inf>/I<inf>OFF</inf> ratio is 10<sup>8</sup>. Moreover, saturation drain current (I<inf>Dmax</inf>) and low on-resistance (R<inf>ON</inf>) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (L<inf>GS</inf> = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrO<inf>x</inf> CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128253659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Invited Talk #10: Direct verification of Quasi-Static Negative Capacitance (QSNC) and its applications 特邀演讲#10:准静态负电容(QSNC)的直接验证及其应用
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933102
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引用次数: 0
Invited Talk #4: SOI CMOS technologies for RF and millimeter-wave communication systems 特邀演讲#4:射频和毫米波通信系统的SOI CMOS技术
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/icicdt56182.2022.9933084
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引用次数: 0
Comparing the L&S and L-Band Antenna Low-Noise Amplifiers Designed by Multi-Objective Optimization 多目标优化设计L&S和l波段天线低噪声放大器的比较
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933072
J. Dobes, J. Míchal
{"title":"Comparing the L&S and L-Band Antenna Low-Noise Amplifiers Designed by Multi-Objective Optimization","authors":"J. Dobes, J. Míchal","doi":"10.1109/ICICDT56182.2022.9933072","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933072","url":null,"abstract":"In the paper, it is demonstrated that the optimal properties of low-noise amplifiers in radio-frequency design can be achieved by the multi-objective optimization, which enables a suitable trade-off between the transducer power gain and noise figure in the form obtained on Pareto front. First, a modification of a classical multi-objective method is suggested that enables asymptotically uniform coverage of the Pareto front. Second, an application of the modified method is demonstrated in the design of the antenna low-noise amplifier for a satellite-navigation receiver. The efficiency of the algorithm is proved on its use for L- and L&S-band low-noise amplifiers, where the resulting amplification and noise-figure correspond to expected optima.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114587259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and Simulation of MEMS-Based Piezoelectric Energy Harvester 基于mems的压电能量采集器建模与仿真
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933115
Dao Ngoc Tuan, Le Phuoc Thanh Quang, Than Hong Phuc, Tran Thi Tra Vinh, H. H. Duc, N. V. A. Quang, Tran The Son
{"title":"Modeling and Simulation of MEMS-Based Piezoelectric Energy Harvester","authors":"Dao Ngoc Tuan, Le Phuoc Thanh Quang, Than Hong Phuc, Tran Thi Tra Vinh, H. H. Duc, N. V. A. Quang, Tran The Son","doi":"10.1109/ICICDT56182.2022.9933115","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933115","url":null,"abstract":"Vibration-based energy harvesting converts surrounding kinetic energy in the form of structural or mechanical vibrations, human movement, and flow into electrical energy. This could be a promising alternative to reduce the maintenance cost and chemical waste of batteries and eventually achieve self-powered electronics and wireless sensor nodes. Energy transfer mechanisms (ETMs) such as piezoelectric, electromagnetic and electrostatic are incorporated into the system to maximize the combined energy from the surroundings. In this paper, the working principle of piezoelectric energy converter is introduced and investigated. Piezoelectric energy harvester based on typical MEMS is considered. A basic MEMS cantilever model is used to measure the optimal parameter. The model is using one layer of Piezoelectric on top of a Brass subtrade, and the result is verified by finite element analysis in COMSOL Multiphysics and NanoHub. The simulated MEMS can generate a voltage of 1.7-1.9 mV and output power 0.074 uW. An array of these devices can be used to increase the supplied power to Internet of Things (IoT) sensors.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115525435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Engineered SiC materials for power technologies 用于电力技术的工程SiC材料
2022 International Conference on IC Design and Technology (ICICDT) Pub Date : 2022-09-21 DOI: 10.1109/ICICDT56182.2022.9933092
W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. B. Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville
{"title":"Engineered SiC materials for power technologies","authors":"W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. B. Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville","doi":"10.1109/ICICDT56182.2022.9933092","DOIUrl":"https://doi.org/10.1109/ICICDT56182.2022.9933092","url":null,"abstract":"SmartSiC™ engineered substrates are proposed to answer the power device needs for high quality, ultra low resistivity materials. 150mm substrates demonstrate Smart Cut™ technology potentials, opening the path to defect free layers and 200mm substrates.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132099318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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