W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. B. Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville
{"title":"用于电力技术的工程SiC材料","authors":"W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. B. Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville","doi":"10.1109/ICICDT56182.2022.9933092","DOIUrl":null,"url":null,"abstract":"SmartSiC™ engineered substrates are proposed to answer the power device needs for high quality, ultra low resistivity materials. 150mm substrates demonstrate Smart Cut™ technology potentials, opening the path to defect free layers and 200mm substrates.","PeriodicalId":311289,"journal":{"name":"2022 International Conference on IC Design and Technology (ICICDT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineered SiC materials for power technologies\",\"authors\":\"W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. B. Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, C. Maleville\",\"doi\":\"10.1109/ICICDT56182.2022.9933092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SmartSiC™ engineered substrates are proposed to answer the power device needs for high quality, ultra low resistivity materials. 150mm substrates demonstrate Smart Cut™ technology potentials, opening the path to defect free layers and 200mm substrates.\",\"PeriodicalId\":311289,\"journal\":{\"name\":\"2022 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT56182.2022.9933092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT56182.2022.9933092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SmartSiC™ engineered substrates are proposed to answer the power device needs for high quality, ultra low resistivity materials. 150mm substrates demonstrate Smart Cut™ technology potentials, opening the path to defect free layers and 200mm substrates.