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2014 IEEE International Electron Devices Meeting最新文献

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Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes 薄膜异质结场效应晶体管的极限电压缩放和低温大面积制造有源矩阵背板
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047111
B. Hekmatshoar, A. Afzali-Ardakani
{"title":"Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes","authors":"B. Hekmatshoar, A. Afzali-Ardakani","doi":"10.1109/IEDM.2014.7047111","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047111","url":null,"abstract":"Thin-Film heterojunction field-effect transistor (HJFET) devices with crystalline Si (c-Si) channels and gate regions comprised of hydrogenated amorphous silicon (a-Si:H) or organic materials are demonstrated. The HJFET devices are processed at 200°C and room temperature, respectively; and exhibit operation voltages below 1V, subthreshold slopes in the range of 70-100mV/dec and off-currents as low as 25 fA/μm. The HJFET devices are proposed for use in active matrix backplanes comprised of low-temperature poly-Si (LTPS) as the c-Si substrate. Compared to conventional LTPS devices which require process temperatures up to 600°C and complex fabrication steps, the HJFET devices offer lower process temperature, simpler fabrication steps and lower operation voltages without compromising leakage or stability.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114772235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Phase Change Memory and its intended applications 相变存储器及其预期应用
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047133
C. Lam
{"title":"Phase Change Memory and its intended applications","authors":"C. Lam","doi":"10.1109/IEDM.2014.7047133","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047133","url":null,"abstract":"Phase Change Memory (PCM) has been one of the emerging memories for more than a decade. Fundamentals of PCM have been studied in great detail, challenges have been identified, and device structures have been proposed and demonstrated. With this large body of knowledge, it is time to examine probable applications for PCM.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127566467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Device aware high-speed transceiver design in planar and FinFet technologies 基于平面和FinFet技术的器件感知高速收发器设计
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047074
Ken Chang, J. Savoj, P. Upadhyaya, Y. Frans
{"title":"Device aware high-speed transceiver design in planar and FinFet technologies","authors":"Ken Chang, J. Savoj, P. Upadhyaya, Y. Frans","doi":"10.1109/IEDM.2014.7047074","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047074","url":null,"abstract":"This paper studies the interaction between devices in advanced CMOS processes and the analog circuits used in high-speed transceivers. It describes the impact of variation on the design with both active and passive devices, and devises circuit techniques to mitigate their impact on the performance of transceivers. A case study of transceiver components in 20nm planar and 16nm FinFET processes are used to illustrate the interactions. With proper design techniques, the transceiver in 20nm operates up to 16.3Gb/s and achieves measured bit error rate lower than 10-15 over 28dB channels.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125286430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes 从扩散到弹道载流子输运的场效应管基于物理的紧凑模型
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047172
S. Rakheja, Mark S. Lundstrom, D. Antoniadis
{"title":"A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes","authors":"S. Rakheja, Mark S. Lundstrom, D. Antoniadis","doi":"10.1109/IEDM.2014.7047172","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047172","url":null,"abstract":"This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127643091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A Magnetic Tunnel Junction based True Random Number Generator with conditional perturb and real-time output probability tracking 具有条件摄动和实时输出概率跟踪的基于磁隧道结的真随机数发生器
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047039
W. Choi, Yang Lv, Jongyeon Kim, Abhishek Deshpande, Gyuseong Kang, Jianping Wang, C. Kim
{"title":"A Magnetic Tunnel Junction based True Random Number Generator with conditional perturb and real-time output probability tracking","authors":"W. Choi, Yang Lv, Jongyeon Kim, Abhishek Deshpande, Gyuseong Kang, Jianping Wang, C. Kim","doi":"10.1109/IEDM.2014.7047039","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047039","url":null,"abstract":"This work experimentally demonstrates for the first time a True Random Number Generator (TRNG) based on the random switching probability of Magnetic Tunnel Junctions (MTJs). A conditional perturb and real-time output probability tracking scheme is proposed to enhance the reliability, speed, and power consumption while maintaining a 100% bit efficiency.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128042221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 102
New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI 关于底层热稳定性和激光退火的新见解有望实现高性能3D VLSI
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047121
C. Fenouillet-Béranger, B. Mathieu, B. Previtali, M.-P. Samson, N. Rambal, V. Benevent, S. Kerdilès, J. Barnes, D. Barge, P. Besson, R. Kachtouli, M. Cassé, X. Garros, A. Laurent, F. Nemouchi, K. Huet, I. Toqué-Trésonne, D. Lafond, H. Dansas, F. Aussenac, G. Druais, P. Perreau, E. Richard, S. Chhun, E. Petitprez, N. Guillot, F. Deprat, L. Pasini, L. Brunet, V. Lu, C. Reita, P. Batude, M. Vinet
{"title":"New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI","authors":"C. Fenouillet-Béranger, B. Mathieu, B. Previtali, M.-P. Samson, N. Rambal, V. Benevent, S. Kerdilès, J. Barnes, D. Barge, P. Besson, R. Kachtouli, M. Cassé, X. Garros, A. Laurent, F. Nemouchi, K. Huet, I. Toqué-Trésonne, D. Lafond, H. Dansas, F. Aussenac, G. Druais, P. Perreau, E. Richard, S. Chhun, E. Petitprez, N. Guillot, F. Deprat, L. Pasini, L. Brunet, V. Lu, C. Reita, P. Batude, M. Vinet","doi":"10.1109/IEDM.2014.7047121","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047121","url":null,"abstract":"For the first time the maximum thermal budget of in-situ doped source/drain State Of The Art (SOTA) FDSOI bottom MOSFET transistors is quantified to ensure transistors stability in Sequential 3D (CoolCube™) integration. We highlight no degradation of Ion/Ioff trade-off up to 550°C. Thanks to both metal gate work-function stability especially on short devices and silicide stability improvement, the top MOSFET temperature could be relaxed up to 500°C. Laser anneal is then considered as a promising candidate for junctions activation. Based on in-depth morphological and electrical characterizations it demonstrates very promising results for high performance Sequential 3D integration.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123490459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
Social impact of power semiconductor devices (Invited Paper) 功率半导体器件的社会影响(特邀论文)
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046963
B. Baliga
{"title":"Social impact of power semiconductor devices (Invited Paper)","authors":"B. Baliga","doi":"10.1109/IEDM.2014.7046963","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7046963","url":null,"abstract":"Silicon IGBTs are now used in all the major sectors of our economy including transportation, consumer, lighting, industrial, medical, and renewable energy generation. The improved efficiency derived from IGBT-based automotive electronic ignition systems, adjustable speed motor drives, and compact fluorescent lamps has reduced gasoline consumption by over 1 Trillion gallons and electricity consumption by over 50,000 Terra-Watt-Hours. The social impact includes consumer cost savings of more than $15 Trillion and carbon dioxide emission reduction by over 75 Trillion pounds.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123517187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
SPAD based image sensors 基于SPAD的图像传感器
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047022
E. Charbon
{"title":"SPAD based image sensors","authors":"E. Charbon","doi":"10.1109/IEDM.2014.7047022","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047022","url":null,"abstract":"The recent availability of miniaturized photon-counting pixels in standard CMOS processes has paved the way to the introduction of photon counting in low-cost time-of-flight cameras, robotics vision, mobile phones, and consumer electronics. In this paper we describe the technology at the core of this revolution: single-photon avalanche diodes (SPADs) and the architectures enabling SPAD based image sensors. We discuss tradeoffs and design trends, often referring to specific sensor chips and applications.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122793280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Two-dimensional nanoelectromechanical systems (2D NEMS) via atomically-thin semiconducting crystals vibrating at radio frequencies 二维纳米机电系统(2D NEMS)通过原子薄半导体晶体振动在无线电频率
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047008
P. Feng, Zenghui Wang, Jaesung Lee, R. Yang, Xuqiang Zheng, K. He, J. Shan
{"title":"Two-dimensional nanoelectromechanical systems (2D NEMS) via atomically-thin semiconducting crystals vibrating at radio frequencies","authors":"P. Feng, Zenghui Wang, Jaesung Lee, R. Yang, Xuqiang Zheng, K. He, J. Shan","doi":"10.1109/IEDM.2014.7047008","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047008","url":null,"abstract":"We report on the initial explorations of engineering atomically-thin semiconducting crystals into a new class of two-dimensional nanoelectromechanical systems (2D NEMS) that are attractive for realizing ultimately thin 2D transducers for embedding in both planar and curved systems. We describe the first resonant NEMS operating at radio frequencies (RF), based on MoS2, a hallmark of 2D semiconducting crystals derived from layered materials in transition metal dichalcogenides (TMDCs). Through a series of careful measurements and analyses, we demonstrate a family of MoS2 2D NEMS resonators possessing very high fundamental-mode frequencies (f0~120MHz, in the VHF band), very broad dynamic range (DR~70-110dB), rich nonlinear dynamics, and outstanding electrical tunability.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123065859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
High voltage silicon based devices for energy efficient power distribution and consumption 用于节能配电和能耗的高压硅基器件
2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046966
A. Kopta
{"title":"High voltage silicon based devices for energy efficient power distribution and consumption","authors":"A. Kopta","doi":"10.1109/IEDM.2014.7046966","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7046966","url":null,"abstract":"This paper gives an overview of future requirements and recent progress of silicon based semiconductor devices for very high power applications. The first part provides an outline of future trends in the areas of power transmission and power consumption and the resulting requirements on device design and performance. The second part elaborates on the recent advances of bipolar power devices and the corresponding packaging technologies used in these high power applications.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121510546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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