2014 IEEE International Electron Devices Meeting最新文献_第4页

New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits 复杂RTN中状态损失的新认识:统计实验研究，陷阱相互作用模型，以及对电路的影响

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047169

Jibin Zou, Runsheng Wang, Shaofeng Guo, Mulong Luo, Zhuoqing Yu, Xiaobo Jiang, P. Ren, Jianping Wang, Jinhua Liu, Jingang Wu, W. Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang, Ru Huang

引用次数: 12

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2 利用cvd合成大面积双层WSe2的快速可见光光电晶体管

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046992

Pang-Shiuan Liu, Chang-Hsiao Chen, W. Hsu, Chih-Pin Lin, Tzu-Ping Lin, Li-Jen Chi, Chao-Yuan Chang, Shih-Chieh Wu, Wen‐Hao Chang, Lain‐Jong Li, T. Hou

引用次数: 2

Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs III-V栅极全能纳米线mosfet自热的直接观察

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047088

S. Shin, M. Masuduzzaman, M. A. Wahab, K. Maize, J. Gu, M. Si, A. Shakouri, P. Ye, M. Alam

{"title":"Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs","authors":"S. Shin, M. Masuduzzaman, M. A. Wahab, K. Maize, J. Gu, M. Si, A. Shakouri, P. Ye, M. Alam","doi":"10.1109/IEDM.2014.7047088","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047088","url":null,"abstract":"Gate-all-around MOSFETs use multiple nanowires to achieve target ION, along with excellent 3D electrostatic control of the channel. Although self-heating effect (SHE) has been a persistent concern, the existing characterization methods, based on indirect measure of mobility and specialized test structures, do not offer adequate spatio-temporal resolution. In this paper, we develop an ultra-fast, high resolution thermo-reflectance (TR) imaging technique to (i) directly observe the increase in local surface temperature of the GAA-FET with different number of nanowires (NWs), (ii) characterize/interpret the time constants of heating and cooling through high resolution transient measurements, (iii) identify critical paths for heat dissipation, and (iv) detect in-situ time-dependent breakdown of individual NW. Our approach also allows indirect imaging of quasi-ballistic transport and corresponding drain/source asymmetry of self-heating. Combined with the complementary approaches that probe the internal temperature of the NW, the TR-images offer a high resolution map of self-heating in the surround-gate devices with unprecedented precision, necessary for validation of electro-thermal models and optimization of devices and circuits.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122906816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 29

Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances 控制掺杂氧化物基CBRAM的氧空位以改善记忆性能

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046993

G. Molas, E. Vianello, F. Dahmani, M. Barci, P. Blaise, J. Guy, A. Toffoli, M. Bernard, A. Roule, F. Pierre, C. Licitra, B. De Salvo, L. Perniola

引用次数: 31

Atomically thin graphene plane electrode for 3D RRAM 用于3D RRAM的原子薄石墨烯平面电极

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046988

Joon Sohn, Seunghyun Lee, Zizhen Jiang, Hong-Yu Chen, H. Wong

引用次数: 19

Poly pitch and standard cell co-optimization below 28nm 聚节距与标准电池在28nm以下协同优化

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047041

M. Frederick

引用次数: 7

Ultra low contact resistivity (< 1×10−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure fabricated with III–V on Si substrates 超低接触电阻率(< 1×10−8 Ω-cm2)至In0.53Ga0.47As鳍侧壁(110)/(100)表面:采用VLSI加工的III-V鳍TLM结构，在Si衬底上由III-V制成

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047155

Rinus Lee, Y. Ohsawa, C. Huffman, Y. Trickett, G. Nakamura, C. Hatem, K. V. Rao, F. Khaja, R. Lin, K. Matthews, K. Dunn, A. Jensen, T. Karpowicz, P. Nielsen, E. Stinzianni, A. Cordes, P. Hung, D. Kim, R. Hill, W. Loh, C. Hobbs

引用次数: 7

An integrated tunable laser using nano-silicon-photonic circuits 采用纳米硅光子电路的集成可调谐激光器

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047060

M. Ren, H. Cai, J. Tao, Y. D. Gu, K. Radhakrishnan, Z. Yang, D. Kwong, A. Liu

引用次数: 2

Imaging with organic and hybrid photodetectors 用有机和混合光电探测器成像

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047024

S. Tedde, Patric Buchele, R. Fischer, F. Steinbacher, O. Schmidt

{"title":"Imaging with organic and hybrid photodetectors","authors":"S. Tedde, Patric Buchele, R. Fischer, F. Steinbacher, O. Schmidt","doi":"10.1109/IEDM.2014.7047024","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047024","url":null,"abstract":"Organic semiconductors provide exiting new opportunities for the realization of flat panel image sensors as they can be processed from the solution phase on large areas at low cost. In particular the high charge separation efficiency obtained in a bulk heterojunction (BHJ) enables the realization of organic photodiodes (OPDs). The spectral sensitivity of OPDs can be tailored to cover wavelengths ranging from the visible to the near infrared region. These sensitivities match perfectly to a variety of X-ray scintillators enabling a further improvement in the sensitivity range. In combination with an amorphous silicon (a-Si) thin film transistor (TFT) backplane technology, visible, near infrared (NIR) and X-ray image sensors have been realized. Thin film OPDs have been used in combination with a cesium iodide (CsI) scintillator in a traditional stacked geometry, proofing state-of-the art performance. Even more, it is possible to blend X-ray absorbing particles directly into the organic semiconductor thereby enabling quasi-direct X-ray converters with the promise to achieve a modulation transfer function (MTF) that is as high as in direct converting materials such as amorphous Selenium.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122975022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM) 金属氧化物电阻(RRAM)的脉冲循环运行与耐久性失效

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047050

S. Balatti, S. Ambrogio, Z.-Q Wang, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini

引用次数: 37