2014 IEEE International Electron Devices Meeting最新文献_第3页

16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM macros with wordline overdriven assist 16纳米FinFET高k/金属栅极256-kbit 6T SRAM宏与wordline超速驱动辅助

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046972

M. Yabuuchi, M. Morimoto, Y. Tsukamoto, S. Tanaka, Koji Tanaka, Miki Tanaka, K. Nii

引用次数: 17

Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration 超薄(~ 2nm) HfOx作为基本阻性开关元件:厚度缩放限制、堆栈工程和3D集成

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046998

Liang Zhao, Zizhen Jiang, Hong-Yu Chen, Joon Sohn, Kye L. Okabe, B. Magyari-Kope, H. Wong, Y. Nishi

引用次数: 24

Bio-MEMS towards single-molecular characterization 迈向单分子表征的生物mems

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047145

H. Fujita

引用次数: 0

Ab-initio simulations of MoS2 transistors: From mobility calculation to device performance evaluation MoS2晶体管的Ab-initio模拟:从迁移率计算到器件性能评估

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047142

Á. Szabó, R. Rhyner, M. Luisier

引用次数: 13

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses 基于OxRAM突触的容变卷积神经网络模式识别应用

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047126

D. Garbin, O. Bichler, E. Vianello, Q. Rafhay, C. Gamrat, L. Perniola, G. Ghibaudo, B. Desalvo

{"title":"Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses","authors":"D. Garbin, O. Bichler, E. Vianello, Q. Rafhay, C. Gamrat, L. Perniola, G. Ghibaudo, B. Desalvo","doi":"10.1109/IEDM.2014.7047126","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047126","url":null,"abstract":"Software implementations of artificial Convolutional Neural Networks (CNNs), taking inspiration from biology, are at the state-of-the-art for Pattern Recognition (PR) applications and they are successfully used in commercial products [1]. However, they require power-hungry CPU/GPU to perform convolution operations based on computationally expensive sums of multiplications. This hinders their integration in portable devices. Some full CMOS-based hardware implementations of CNN have been suggested, but they still require the computation of multiplications [2]. In this work, we present for the first time to our knowledge a spike-based hardware implementation of CNN using HfO2 based OxRAM devices as binary synapses. OxRAM devices are chosen for their low switching energy [3] and promising endurance performance [4]. We perform an experimental and theoretical study of the impact of programming conditions at both device and system levels. A complex visual pattern recognition application is demonstrated with a spike-based hierarchical CNN, inspired from the mammalian visual cortex organization. A high accuracy (pattern recognition rate >94%) is obtained for all the tested programming conditions, even if the variability associated to weaker programming conditions is larger.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"749 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126940330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 71

Research into ADAS with driving intelligence for future innovation 研究ADAS，为未来创新提供智能驱动

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7046962

H. Inoue

引用次数: 12

MEMS for cell mechanobiology 细胞力学生物学的MEMS

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047147

B. Pruitt

{"title":"MEMS for cell mechanobiology","authors":"B. Pruitt","doi":"10.1109/IEDM.2014.7047147","DOIUrl":"https://doi.org/10.1109/IEDM.2014.7047147","url":null,"abstract":"Living organisms generate and respond to mechanical forces and these forces are sensed and created by specialized cells in the body. Force generation and sensing, or more broadly the mechanobiology coupling tissue (cell) mechanics and biology, are essential in normal development, wound healing, and tissue homeostasis. Our mechanical senses of hearing and touch allow us to navigate our environment and interact with one another, yet they remain the least understood of our perceptive senses. Basic life sustaining functions such as breathing, circulation, and digestion are driven autonomously by coordinated contraction of specialized muscle cells, yet how these functions incorporate active feedback via force sensing at the cellular level is an area of active study. Meanwhile, a variety of specialized stretch activated receptors and mechanically mediated biochemical signaling pathways have been identified in recent years. Importantly, defects in proteins of these mechanically mediated pathways and receptors have been implicated in disease states spanning cardiovascular disease, cancer growth and metastasis, neuropathy, and deafness. Thus, understanding the mechanical basis of homeostasis (health) and defective cell renewal function (disease) increasingly requires us to consider the role of mechanics. To study how cells and tissues integrate mechanical signals, we and others have developed specialized cell cultures systems and micromachined tools to stimulate and measure forces and displacements at the scale of proteins and cells. A key feature of such experiments is the ability to observe cell outputs such as morphological changes, protein expression, electrophysiological signaling, force generation and transcriptional activity in response to mechanical stimuli. (Figure 1.).","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125394867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Label-free optical biochemical sensor realized by a novel low-cost bulk-silicon based CMOS-compatible 3-dimensional optoelectronic IC (OEIC) platform 一种新型低成本体硅基cmos兼容三维光电集成电路(OEIC)平台实现了无标签光学生化传感器

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047059

Junfeng Song, Xianshu Luo, J. Kee, C. Li, G. Lo

引用次数: 0

Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform 在AlGaN/GaN-on-Si平台上实现的肖特基异质结光电功能器件

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047032

Baikui Li, Xi Tang, Q. Jiang, Yunyou Lu, Hanxing Wang, Jiannong Wang, K. J. Chen

引用次数: 10

GaN-based Gate Injection Transistors for power switching applications 用于功率开关的氮化镓基栅注入晶体管

2014 IEEE International Electron Devices Meeting Pub Date : 2014-12-01 DOI: 10.1109/IEDM.2014.7047031

T. Ueda, H. Handa, Y. Kinoshita, H. Umeda, S. Ujita, Ryo Kajitani, M. Ogawa, Kenichiro Tanaka, T. Morita, S. Tamura, H. Ishida, M. Ishida

引用次数: 12