2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)最新文献_第2页

Random-dopant-induced DC characteristic fluctuations in 16-nm-Gate LAC and inLAC MOSFET devices 随机掺杂剂诱导的16nm栅极LAC和inLAC MOSFET器件的直流特性波动

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549571

Thet-Thet Khaing, Hui-Wen Cheng, Kuo-Fu Lee, Yiming Li

引用次数: 0

Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor 用于液相传感器的无门场效应管掺杂AlGaN/GaN HEMT结构

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549371

M. Abidin, M. E. Sharifabad, A. M. Hashim, S. Rahman, A. Rahman, R. Qindeel, Nurul Afzan Omar, A. Aziz, M. Hashim, M. M. Mohamed

引用次数: 4

VHDL implementation of fuzzy based handwriting recognition system 基于模糊的手写识别系统的VHDL实现

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549349

M. Islam, M. S. Bhuyan, S. Ali, M. Othman, B. Majlis

{"title":"VHDL implementation of fuzzy based handwriting recognition system","authors":"M. Islam, M. S. Bhuyan, S. Ali, M. Othman, B. Majlis","doi":"10.1109/SMELEC.2010.5549349","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549349","url":null,"abstract":"This paper describes the implementation of fuzzy based Handwriting Recognition (HR) system in VHDL. Key motivation of the design is to reduce computational complexity and performance enhancement. Fuzzy intelligent technique is used to tackle inherent ambiguities in different handwriting recognition. This system is capable of recognizing handwritten characters such as one segment, distinguish characters and symbols. The algorithm of the HR system is developed in Matlab first, followed by Fuzzy perception. The model is extensively tested with different sets of handwriting to verify the correct functionality of the system. The Matlab codes are then translated into VHDL using Quartus II from Altera. Simulation results showed clear evidence that fuzzy based HR system is capable of emulating different human reading. Comparison between simulation results in Matlab and VHDL is presented to validate the developed HR system. Quartus Integrated Synthesis (QIS) is used to synthesize the hardware architecture. The system runs at 4.31 MHz with propagation delay of 231 ns. The developed HR hardware system is applicable in automating document-processing task such as mail sorting, check reading in Personal Digital Assistant (PDA), and tablet PCs etc.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115438022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ballistic transport in nanowires and carbon nanotubes 纳米线和碳纳米管中的弹道传输

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549503

V. Arora

{"title":"Ballistic transport in nanowires and carbon nanotubes","authors":"V. Arora","doi":"10.1109/SMELEC.2010.5549503","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549503","url":null,"abstract":"The charge carriers in nanowires (NWs), carbon nanotubes (CNTs), and those confined to a very high magnetic field have one-dimensional (1D) character as quasi-free propagation of electron waves with analog energy spectrum exists only in one direction. The energy spectrum is quantum (or digital) in other two cartesian directions where electron waves are standing waves. In the quantum limit, an electron (hole) occupies the lowest (highest) digitized/quantized state giving it a distinct 1D character. The energy E =vF | k | in carbon-based devices is linearly dependent on the wave vector k, where vF ≈ 106 m/s. This is in direct contrast to parabolic character E =ħ2 k2/2m∗ in solids with effective mass m∗, for example in silicon NWs. The probability of changing wavevector from +ve to −ve direction through scattering or vice versa is greatly reduced and hence high mobility is expected, especially at low temperatures. The crucial outcome of this paper is the answer to the question: Does a higher mobility leads to a higher ultimate saturation velocity? The distribution function in a high electric field ε is then naturally asymmetrical affected by the energy ±qεℓ absorbed or emitted by a carrier of charge q during its ballistic flight in a mean free path ℓ. The ultimate drift in response to a high electric field results in unidirectional streaming of the otherwise randomly-oriented velocity vectors in equilibrium. The high-field drift limited by the intrinsic velocity is ballistic, unaffected by scattering-limited processes. The ultimate velocity is further limited to an emission of a quantum either in the form of an optical phonon or a photon by an electron excited to a higher state by the applied electric field. The velocity does not depend on scattering parameters. Ballistic processes as a result of reduction in length of a CNT or NW below the scattering-limited mean free path ℓ in the quasi-free direction are also discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design of MEMS piezoelectric microgenerator using voltage and power optimization 采用电压和功率优化的MEMS压电微型发电机的设计

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549370

L. Taha, B. Majlis, A.A. Ali

引用次数: 2

Conductivity of ZnS: Mn nanocrystal layers with various Mn Ion concentrations 不同Mn离子浓度下ZnS: Mn纳米晶层的电导率

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549545

Mohd Syuhaimi Ab Rahman, N. A. A. M. Arif, A. Ehsan

引用次数: 0

Plasma-assisted MOCVD growth of GaMnN 等离子体辅助GaMnN MOCVD生长

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549459

B. Mulyanti, P. Arifin

{"title":"Plasma-assisted MOCVD growth of GaMnN","authors":"B. Mulyanti, P. Arifin","doi":"10.1109/SMELEC.2010.5549459","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549459","url":null,"abstract":"The growth of GaMnN thin films on c-plane sapphire substrate by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. Cyclopentadienyl manganese tricarbonyl (Cp2MnT) was used as a source of Mn. The growth was conducted at varied growth temperature in the range of 625 to 700°C and V/III flux ratios between 440 and 1080. The growth rate and Mn incorporation into GaN highly depend on growth parameters. From the analysis of XRD spectra, it was found that the highest Mn incorporation into GaMnN which would produce single phase GaMnN (0002) was 6.4 % at growth temperature of 650°C. While at growth temperature of 700°C, the maximum of Mn incorporation into GaMnN films that would still produce single phase film were 3.2 %. The surface roughness of the films determined from AFM image results showing that high growth temperatures tend to improve the surface morphology of GaMnN. The results of magnetization measurement shows hysteresis behavior at room temperature with various values of coercivity, saturation and remnant magnetization in the range of 350-800 Oe, 20-39 emu/cm3 and 10.2–34.4 emu/cm3, respectively depend on the Mn concentration. For the films grown at 650 °C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.0 %, i.e. 3.1 µΒ/Mn-atom. While for the films grown at 700°C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.5 %, i.e. 3.7 µΒ /Mn-atom.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126462110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A low power high linearity CMOS folded mixer for WiMAX application 用于WiMAX应用的低功耗高线性CMOS折叠混频器

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549390

C. Hsiao, Yi-Lun Huang

引用次数: 3

A proposed low power voltage multiplier for passive UHF RFID transponder 一种用于无源超高频RFID应答器的低功率电压乘法器

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549377

P. Fahsyar, N. Soin

引用次数: 2

Design analysis of single layer coupled coils 单层耦合线圈的设计分析

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) Pub Date : 2010-06-28 DOI: 10.1109/SMELEC.2010.5549375

J. Yunas, N. Sulaiman, A. Bahadorimehr, B. Majlis

引用次数: 1