A proposed low power voltage multiplier for passive UHF RFID transponder

P. Fahsyar, N. Soin
{"title":"A proposed low power voltage multiplier for passive UHF RFID transponder","authors":"P. Fahsyar, N. Soin","doi":"10.1109/SMELEC.2010.5549377","DOIUrl":null,"url":null,"abstract":"The design of a low power voltage multiplier for passive UHF RFID transponder which compatible with CMOS process and can be applied to the surroundings in where the distance from the reader changes greatly is presented in this paper. The functioning principle of N-stage voltage multiplier is introduced in this paper. With the intention of maximizing the operating range of RFID tag, low power design techniques are necessary. Therefore, the key design parameters optimization is discussed. The transistor size (W/L) and number of stages (N) are varied in order to attain the great value of output voltage and power efficiency. This proposed design is implemented in 0.18µm process. The calculated and simulated result shows that the four-stage voltage multiplier can work at frequency 900MHz by using 8µm transistor size and the power efficiency is 34% with output voltage 1.2V.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2010.5549377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The design of a low power voltage multiplier for passive UHF RFID transponder which compatible with CMOS process and can be applied to the surroundings in where the distance from the reader changes greatly is presented in this paper. The functioning principle of N-stage voltage multiplier is introduced in this paper. With the intention of maximizing the operating range of RFID tag, low power design techniques are necessary. Therefore, the key design parameters optimization is discussed. The transistor size (W/L) and number of stages (N) are varied in order to attain the great value of output voltage and power efficiency. This proposed design is implemented in 0.18µm process. The calculated and simulated result shows that the four-stage voltage multiplier can work at frequency 900MHz by using 8µm transistor size and the power efficiency is 34% with output voltage 1.2V.
一种用于无源超高频RFID应答器的低功率电压乘法器
本文设计了一种兼容CMOS工艺的低功率超高频RFID应答器电压倍增器,适用于与读写器距离变化较大的环境。介绍了n级电压倍增器的工作原理。为了使RFID标签的工作范围最大化,低功耗设计技术是必要的。为此,对关键设计参数的优化进行了探讨。晶体管的尺寸(W/L)和级数(N)是不同的,以获得输出电压和功率效率的大值。该设计在0.18µm工艺中实现。计算和仿真结果表明,当输出电压为1.2V时,采用8µm晶体管尺寸的四级电压倍增器可以工作在900MHz频率,功率效率为34%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信