Conductivity of ZnS: Mn nanocrystal layers with various Mn Ion concentrations

Mohd Syuhaimi Ab Rahman, N. A. A. M. Arif, A. Ehsan
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Abstract

Transition metal-doped ZnS materials have received broad attention due to their well-known performance in electronics and optics. It has been observed previously by other researchers that Mn is one of interesting dopant. This dopant inside of ZnS offers a feasible means of fine tuning band gap. Because of this property, we interested to study the effect on electrical part. Hence, the aim of this work is discussed in term of electrical dark conductivity and photoconductivity of ZnS: Mn. Zn(1−x)MnxS samples with various x values (0.05≤ x ≤ 0.35) are synthesized by using sol gel spin coating method. Surface morphology and I-V characteristics of the samples are investigated by using FE-SEM and dc electrical measurement with and without UV exposure. It is found that the average diameters are between 25 and 27 nm. The increase of Mn site doping concentration leads to an increase of the electrical dark conductivity and photoconductivity of the samples. Moreover, we have found that the current increases greater with the increment of Mn concentration by using UV source.
不同Mn离子浓度下ZnS: Mn纳米晶层的电导率
过渡金属掺杂ZnS材料因其在电子学和光学领域的优异性能而受到广泛关注。前人已经观察到锰是一种有趣的掺杂剂。ZnS内部的掺杂剂为精细调节带隙提供了一种可行的方法。由于这一性质,我们有兴趣研究对电气部分的影响。因此,本文的目的是从ZnS: Mn的暗电导率和光电导率的角度来讨论。采用溶胶-凝胶自旋镀膜法合成了不同x值(0.05≤x≤0.35)的Zn(1−x)MnxS样品。利用FE-SEM和直流电测量方法研究了样品在紫外照射和不紫外照射下的表面形貌和I-V特性。平均直径在25 ~ 27 nm之间。Mn位点掺杂浓度的增加导致样品的暗电导率和光电导率的增加。此外,我们还发现,使用UV光源时,电流随Mn浓度的增加而增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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