2020 5th International Conference on Devices, Circuits and Systems (ICDCS)最新文献

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Implementation of VARMA Model for Ionospheric TEC Forecast over an Indian GNSS Station VARMA模式在印度GNSS电离层TEC预报中的应用
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243568
S. Salma, G. Sivavaraprasad, B. Madhav, D. Venkata Ratnam
{"title":"Implementation of VARMA Model for Ionospheric TEC Forecast over an Indian GNSS Station","authors":"S. Salma, G. Sivavaraprasad, B. Madhav, D. Venkata Ratnam","doi":"10.1109/ICDCS48716.2020.243568","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243568","url":null,"abstract":"Accuracy in positioning services of the Global Navigation Satellite System (GNSS) is majorly affected due to ionospheric signal delays. The forecasting of ionospheric delays is tough and challenging low-latitude regions due to rapid temporal variations in ionospheric electron density irregularities. Hence, in this paper a non-stationary signal decomposition technique based on Variational Mode Decomposition (VMD), combined with Auto Regressive Moving Average (ARMA) called VMD-ARMA (VARMA) model is presented to forecast the ionospheric delay values 1 hour ahead. The performance of the proposed VARMA ionospheric TEC forecasting algorithm is tested during geomagnetic storms that occurred in June 2013. Three months GNSS data i.e., from 1 April 2013- 30 June 2013 is logged using GNSS Ionospheric Scintillation and TEC Monitor (GISTM) receiver located at Koneru Lakshamaiah Education Fondation, (K L E F), Guntur station (geographic: 16.37°N, 80.44°E), India. It is found that the VARMA model is 2-3% more efficient than the ARMA model in providing good forecasting accuracy during storm conditions. The forecasting results demonstrate that the VARMA version can be useful to forecast the ionospheric TEC variations at low-latitude regions during disturbed ionospheric space weather conditions also.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131323646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Novel Multilevel Hybrid Segmentation and Refinement Method for Automatic Heterogeneous True NSCLC Nodules Extraction 非小细胞肺癌非均匀真实结节自动提取的多级混合分割与细化方法
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243586
P. Samundeeswari, R. Gunasundari
{"title":"A Novel Multilevel Hybrid Segmentation and Refinement Method for Automatic Heterogeneous True NSCLC Nodules Extraction","authors":"P. Samundeeswari, R. Gunasundari","doi":"10.1109/ICDCS48716.2020.243586","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243586","url":null,"abstract":"The experts uses chest Computed Tomography (CT) images to manually analyze the presence of cancerous nodule during cancer screening process. Due to heterogeneous and low intensity nature of CT image, manual image analyzing becomes difficult which leads to different problems like false positive detection, consumption of huge analyzing time, observer error, etc. Developing an efficient automatic Computer Aided Detection (CAD) system is essential to reduce the frequency of missed lung cancer nodules, make diagnosis simpler and time saving. The CAD system improves the accuracy of lung tumor detection and survival rate of the patient. In this paper, a fully automated model is presented for NSCLC nodule(s) segmentation from CT scan image. The proposed method follows four steps: (1) Preprocessing, (2) Automatic Lung Parenchyma Extraction and Border Repair (ALPE&BR), (3) Automatic lung nodules segmentation using Connected Component Analysis (CCA) and Threshold BasedMathematical Nodule (TBMN) refinement algorithm and (4) Nodules filtering using Hounsfield Unit (HU) value and true cancerous nodule extraction. The ALPE&BR method consists of Automatic Single Seeded Region Growing (ASSRG) algorithm for automatic lung parenchyma extraction and novel hybrid border concavity closing algorithm to get clear lung boundary. The proposed method successfully segments the true cancerous nodules by filtering out false region such as vessels, bone, fat, soft tissues, etc. The proposed method can provide the SN of 99.41%, SP of 99.97%, FPR of 0.019%, DSC of 0.98, and accuracy of 99.97%. These results are used to demonstrate that the proposed method outperforms the existing lung nodule segmentation method.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131366019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of GAA SNTFT with Different Dielectric Materials 不同介电材料的GAA SNTFT分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243599
Jenyfal Sampson, P. S. kumar, S. Velmurugan
{"title":"Analysis of GAA SNTFT with Different Dielectric Materials","authors":"Jenyfal Sampson, P. S. kumar, S. Velmurugan","doi":"10.1109/ICDCS48716.2020.243599","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243599","url":null,"abstract":"A p-channel Stacked Nano Sheet Gate All Around Thin Film Transistor (SNS GAATFT) with different gate material has been analyzed for a gate length of 1um. The Ion/Ioff is calculated for SNS GAATFT with different dielectric materials and the IV characteristics have been plotted for different work functions. Compared is the performance of transistors with different dielectric materials to understand that which material provides better performance. Short Channel Effects (SCE) have been calculated for all the materials.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133268812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Comparative Performance Analysis of DTC fed Three-Phase and Five-Phase Induction Motor 直接转矩控制三相与五相异步电动机性能对比分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243572
Richa Pandey, A. Panda, N. Patnaik
{"title":"Comparative Performance Analysis of DTC fed Three-Phase and Five-Phase Induction Motor","authors":"Richa Pandey, A. Panda, N. Patnaik","doi":"10.1109/ICDCS48716.2020.243572","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243572","url":null,"abstract":"This paper presents a comprehensive comparative analysis between a three-phase induction motor and five-phase induction motor, both of which are controlled using a direct torque control (DTC) based algorithm. The analysis is based on their respective mathematical models. Also, DTC algorithm for both the machine drives is discussed in the paper. The main focus of this analysis is based on their torque response under fixed and variable load. Also, the torque ripple content is another important parameter where evident differences is observed between the two induction motor drives. A DTC based three-phase induction motor has proved to be a very effective drive, however, it develops considerable ripple content and is less fault tolerant. These drawbacks are overcome in a five-phase induction motor along with effective controlling due to DTC algorithm. This comparative analysis is based on simulation design of both the drives using MATLAB/SIMULINK.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"22 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparative Analysis of Control Design for Uncertain MIMO Systems 不确定MIMO系统控制设计的比较分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243561
T. Narasimhulu, G. Rao, Mallikarjuna Rao Pasumathi
{"title":"Comparative Analysis of Control Design for Uncertain MIMO Systems","authors":"T. Narasimhulu, G. Rao, Mallikarjuna Rao Pasumathi","doi":"10.1109/ICDCS48716.2020.243561","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243561","url":null,"abstract":"A method of designing the Continuous dynamic Sliding Mode Controller (SMC) by considering reduced order model of a given large scale MIMO system. It has been shown that the controller designed for the original system improves the transient performance over the usage of conventional PID controller. This projected method produces stable reduced order models for given original higher order established system and it gives better track of rounding and transition errors for each measured value by automatically. The method has been tested by considering typical numerical example, available in the literature.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feasibility Study of Energy Extraction from Wind Pressure of Outdoor Fan of Refrigerator Using Small Scale Wind Turbine: Bangladesh Perspective 利用小型风力发电机从冰箱室外风机风压中提取能量的可行性研究:孟加拉国视角
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243548
Md. Shihab Uddin, A. Al Mamum, M. Rahman, Md. Foridujjaman
{"title":"Feasibility Study of Energy Extraction from Wind Pressure of Outdoor Fan of Refrigerator Using Small Scale Wind Turbine: Bangladesh Perspective","authors":"Md. Shihab Uddin, A. Al Mamum, M. Rahman, Md. Foridujjaman","doi":"10.1109/ICDCS48716.2020.243548","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243548","url":null,"abstract":"Mass quantity of population, emission from conventional power plant, and more demand than supply i.e. load shedding encouraged us to search alternative way to fulfill the energy crisis of humankind and reduce greenhouse gas emission. In this paper, we just study the feasibility of energy from outdoor fan of air conditioning system using small wind turbine (rotor radius 0.25-5m), because nowadays air conditioning is the second largest energy consumption device among commercial as well as home appliances in Bangladesh due to climates fluctuation. Moreover, the extracted energy will store in electrochemical device to use this energy during load shedding. It not only helps to reduce tariff but also remove power cut-off tension and replace high price heavy and solar irradiance dependent on-grid rooftop solar system. We measured the outdoor fan’s wind speed using anemometer of various capacities such as 1 to 2 tons’ air conditioners. Later the model’s performance analyzes numerically by MATLAB software. It shows maximum mechanical power 40W at trip speed ratio 8. In addition, cost analysis has done to know economic feasibility.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peak-to-Average Power Ratio reduction in OTFS modulation using companding technique 利用扩压技术降低OTFS调制的峰均功率比
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243567
C. Naveen, V. Sudha
{"title":"Peak-to-Average Power Ratio reduction in OTFS modulation using companding technique","authors":"C. Naveen, V. Sudha","doi":"10.1109/ICDCS48716.2020.243567","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243567","url":null,"abstract":"OTFS (Orthogonal Time Frequency & Space) is one of the recent 2D modulation scheme suitable for 5G.In which information symbols in the delay-Doppler grid of N×M are multiplexed over new class of carrier waveforms, which are localized pulses represented in delay-Doppler domain. Where M represents number of delay bins and N represents number of Doppler bins. For smaller values of N the PAPR of OTFS is lower than the OFDM but as the N value increases PAPR of OTFS and OFDM are almost same. In order to decrease the PAPR of OTFS for higher values of N (N>4), we have proposed a conventional MuLaw companding technique, which will reduce the PAPR of OTFS by 2.5dB with respect to original OTFS signal with slight degradation in bit error rate(BER) performance. The MATLAB simulation is carried out for different values of companding factor(µ) and CCDF of PAPR of OTFS and BER is plotted. The optimal value of companding factor(µ) is found from simulation results.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127831934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Silicon-on-Insulator based MOSFET for Bio sensing Applications 基于绝缘体上硅的MOSFET生物传感应用
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243610
J. Pravin, A. Lokesh, V. Reddy, Shahid Aman Khan
{"title":"Silicon-on-Insulator based MOSFET for Bio sensing Applications","authors":"J. Pravin, A. Lokesh, V. Reddy, Shahid Aman Khan","doi":"10.1109/ICDCS48716.2020.243610","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243610","url":null,"abstract":"This paper is aimed to distinguish the membrane potential occuring in both normal and a sick patient’s blood, which tends to change when blood samples are imposed on the glucose-based solution. Depending on the variation in the membrane potential which is fed as an input, the p-type Silicon on Insulator (SOI) MOSFET produces various drain current values. The transfer characteristics have been plotted for both normal and sick people, from their blood samples, using the membrane potential.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126438392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AC Gain analysis of Multi-stage Common Source Amplifier Using GAA-CNTFET GAA-CNTFET多级共源放大器的交流增益分析
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243554
Singh Rohitkumar Shailendra, C. P, V. N. Ramakrishnan, H. Mimura
{"title":"AC Gain analysis of Multi-stage Common Source Amplifier Using GAA-CNTFET","authors":"Singh Rohitkumar Shailendra, C. P, V. N. Ramakrishnan, H. Mimura","doi":"10.1109/ICDCS48716.2020.243554","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243554","url":null,"abstract":"Carbon Nanotube Field Effect Transistor (CNTFET) is cutting-edge technology where the demand for transistor scaling is increasing day by day industrially. Beyond 10 nm scaling of MOSFET is introducing several limitations like short channel effect, drain induced barrier lowering, less Ion/off ratio etc. Instead of modifying the existing MOSFET technologies, recent new technologies are considered as future and as per prediction of the Global Market for carbon nanotubes report, CNTFET is going to make a severe impact in the semiconductor market. In this paper, first AC analysis is done by varying number of channels of GAA-CNTFET of Common Source Amplifier and results are shown in the form of a graph. Then AC analysis is performed by varying diameter of GAACNTFET and from the result of this analysis which maximum gain was obtained is chosen. Similarly, AC analysis is formed by varying oxide thickness (tox) and dielectric material (kox) and from the results of these analyses, the best-case gain is obtained for single stage, two stages, and three stages common source amplifier using CNTFET on 11 nm technology. In the frequency domain, it corresponds to 19.102 dB for single stage, 38.26 dB for two-stages and 56.34 dB for three stages.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128189850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Temperature on p-GaN HEMT for High Power Application 温度对大功率应用p-GaN HEMT的影响
2020 5th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2020-03-01 DOI: 10.1109/ICDCS48716.2020.243569
Ninita Geddam, S. B, Adhithan Pon, A. Bhattacharyya, R. R.
{"title":"Influence of Temperature on p-GaN HEMT for High Power Application","authors":"Ninita Geddam, S. B, Adhithan Pon, A. Bhattacharyya, R. R.","doi":"10.1109/ICDCS48716.2020.243569","DOIUrl":"https://doi.org/10.1109/ICDCS48716.2020.243569","url":null,"abstract":"In this work, we study the influence of temperature on the p-GaN gate (with/without spacer) enhancement mode HEMT. First, the HEMT structure is designed with a p-type gate and its DC characteristics have been studied at room temperature (RT). It is observed that on-current increases significantly (1.2 times high) when the spacer layer is removed. The influence of temperature variation has been analysed in both the devices in terms of on-current (Id), leakage current (Ioff), threshold voltage (Vt) and on-resistance (Ron). Our simulation results show that the without spacer layer p-GaN gate HEMT enhances the device performance for various temperatures.","PeriodicalId":307218,"journal":{"name":"2020 5th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127334383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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