Analysis of GAA SNTFT with Different Dielectric Materials

Abstract

A p-channel Stacked Nano Sheet Gate All Around Thin Film Transistor (SNS GAATFT) with different gate material has been analyzed for a gate length of 1um. The Ion/Ioff is calculated for SNS GAATFT with different dielectric materials and the IV characteristics have been plotted for different work functions. Compared is the performance of transistors with different dielectric materials to understand that which material provides better performance. Short Channel Effects (SCE) have been calculated for all the materials.