Influence of Temperature on p-GaN HEMT for High Power Application

In this work, we study the influence of temperature on the p-GaN gate (with/without spacer) enhancement mode HEMT. First, the HEMT structure is designed with a p-type gate and its DC characteristics have been studied at room temperature (RT). It is observed that on-current increases significantly (1.2 times high) when the spacer layer is removed. The influence of temperature variation has been analysed in both the devices in terms of on-current (Id), leakage current (Ioff), threshold voltage (Vt) and on-resistance (Ron). Our simulation results show that the without spacer layer p-GaN gate HEMT enhances the device performance for various temperatures.